SG10201607848SA - Mask blank, transfer mask, and methods of manufacturing the same - Google Patents
Mask blank, transfer mask, and methods of manufacturing the sameInfo
- Publication number
- SG10201607848SA SG10201607848SA SG10201607848SA SG10201607848SA SG10201607848SA SG 10201607848S A SG10201607848S A SG 10201607848SA SG 10201607848S A SG10201607848S A SG 10201607848SA SG 10201607848S A SG10201607848S A SG 10201607848SA SG 10201607848S A SG10201607848S A SG 10201607848SA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- manufacturing
- methods
- same
- transfer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012112333 | 2012-05-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201607848SA true SG10201607848SA (en) | 2016-11-29 |
Family
ID=49583654
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406324PA SG11201406324PA (en) | 2012-05-16 | 2013-05-09 | Mask blank, transfer mask, and methods of manufacturing the same |
SG10201607848SA SG10201607848SA (en) | 2012-05-16 | 2013-05-09 | Mask blank, transfer mask, and methods of manufacturing the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406324PA SG11201406324PA (en) | 2012-05-16 | 2013-05-09 | Mask blank, transfer mask, and methods of manufacturing the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US9470971B2 (en) |
JP (2) | JP6173765B2 (en) |
KR (1) | KR102123702B1 (en) |
SG (2) | SG11201406324PA (en) |
TW (2) | TWI615669B (en) |
WO (1) | WO2013172248A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5286455B1 (en) | 2012-03-23 | 2013-09-11 | Hoya株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
SG11201406324PA (en) * | 2012-05-16 | 2014-11-27 | Hoya Corp | Mask blank, transfer mask, and methods of manufacturing the same |
JP6387245B2 (en) | 2014-05-15 | 2018-09-05 | 日産自動車株式会社 | Engine waste heat utilization device |
JP6418035B2 (en) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | Phase shift mask blanks and phase shift masks |
JP6621626B2 (en) * | 2015-09-18 | 2019-12-18 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
JP6500791B2 (en) * | 2016-01-22 | 2019-04-17 | 信越化学工業株式会社 | Halftone phase shift photomask blank and method of manufacturing the same |
JP6947207B2 (en) * | 2016-09-28 | 2021-10-13 | 信越化学工業株式会社 | Halftone phase shift photomask blank and halftone phase shift photomask |
JP6677139B2 (en) * | 2016-09-28 | 2020-04-08 | 信越化学工業株式会社 | Manufacturing method of halftone phase shift type photomask blank |
JP2021170128A (en) * | 2019-10-01 | 2021-10-28 | 信越化学工業株式会社 | Halftone phase shift photomask blank and halftone phase shift photomask |
US11869538B2 (en) | 2020-03-06 | 2024-01-09 | Hoya Corporation | Method for manufacturing glass spacer, glass spacer, and hard disk drive device |
JP7346527B2 (en) | 2021-11-25 | 2023-09-19 | Hoya株式会社 | Mask blank, transfer mask, mask blank manufacturing method, transfer mask manufacturing method, and display device manufacturing method |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3431313B2 (en) | 1994-11-08 | 2003-07-28 | 株式会社東芝 | Exposure substrate, exposure mask, and method of manufacturing exposure substrate |
JPH0980736A (en) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | Mask for exposure and its production |
JP2996613B2 (en) | 1995-12-27 | 2000-01-11 | ホーヤ株式会社 | Phase shift mask blank and method of manufacturing phase shift mask |
JPH11258772A (en) * | 1998-03-16 | 1999-09-24 | Toppan Printing Co Ltd | Halftone phase shift mask blank and halftone phase shift mask |
JP3528042B2 (en) | 2000-01-24 | 2004-05-17 | ウシオ電機株式会社 | Light heating device |
JP2002090978A (en) | 2000-09-12 | 2002-03-27 | Hoya Corp | Method of manufacturing phase shift mask blank and apparatus for manufacturing phase shift mask blank |
JP3722029B2 (en) | 2000-09-12 | 2005-11-30 | Hoya株式会社 | Phase shift mask blank manufacturing method and phase shift mask manufacturing method |
JP4158885B2 (en) | 2002-04-22 | 2008-10-01 | Hoya株式会社 | Photomask blank manufacturing method |
JP4049372B2 (en) | 2002-10-23 | 2008-02-20 | Hoya株式会社 | Method for manufacturing halftone phase shift mask blanks |
US6872496B2 (en) * | 2002-10-31 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company | AlSixOy as a new bi-layer high transmittance attenuating phase shifting mask material for 193 nanometer lithography |
JP4336206B2 (en) | 2004-01-07 | 2009-09-30 | Hoya株式会社 | Mask blank manufacturing method and mask blank manufacturing sputtering target |
JP3828119B2 (en) * | 2004-04-19 | 2006-10-04 | 大日本印刷株式会社 | Method for manufacturing halftone phase shift mask |
JP4766507B2 (en) | 2005-03-30 | 2011-09-07 | Hoya株式会社 | Phase shift mask blank and method of manufacturing phase shift mask |
JP4930964B2 (en) * | 2005-05-20 | 2012-05-16 | Hoya株式会社 | Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask |
JP5254581B2 (en) * | 2007-08-22 | 2013-08-07 | Hoya株式会社 | Photomask and photomask manufacturing method |
JP5349819B2 (en) * | 2008-03-25 | 2013-11-20 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
JP4489820B2 (en) * | 2008-03-31 | 2010-06-23 | Hoya株式会社 | Phase shift mask blank manufacturing method and phase shift mask blank manufacturing apparatus |
JP5409298B2 (en) * | 2009-11-26 | 2014-02-05 | Hoya株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
SG11201406324PA (en) * | 2012-05-16 | 2014-11-27 | Hoya Corp | Mask blank, transfer mask, and methods of manufacturing the same |
-
2013
- 2013-05-09 SG SG11201406324PA patent/SG11201406324PA/en unknown
- 2013-05-09 SG SG10201607848SA patent/SG10201607848SA/en unknown
- 2013-05-09 KR KR1020147013112A patent/KR102123702B1/en active IP Right Grant
- 2013-05-09 US US14/391,345 patent/US9470971B2/en active Active
- 2013-05-09 WO PCT/JP2013/063047 patent/WO2013172248A1/en active Application Filing
- 2013-05-10 JP JP2013099897A patent/JP6173765B2/en active Active
- 2013-05-16 TW TW106126174A patent/TWI615669B/en active
- 2013-05-16 TW TW102117426A patent/TWI600779B/en active
-
2016
- 2016-09-19 US US15/268,818 patent/US9946153B2/en active Active
-
2017
- 2017-07-05 JP JP2017131699A patent/JP6482608B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2013172248A1 (en) | 2013-11-21 |
KR102123702B1 (en) | 2020-06-16 |
JP6482608B2 (en) | 2019-03-13 |
JP2017173857A (en) | 2017-09-28 |
US9946153B2 (en) | 2018-04-17 |
US20150104735A1 (en) | 2015-04-16 |
TWI615669B (en) | 2018-02-21 |
JP2013257544A (en) | 2013-12-26 |
SG11201406324PA (en) | 2014-11-27 |
US9470971B2 (en) | 2016-10-18 |
TWI600779B (en) | 2017-10-01 |
TW201350596A (en) | 2013-12-16 |
TW201736942A (en) | 2017-10-16 |
JP6173765B2 (en) | 2017-08-02 |
US20170003583A1 (en) | 2017-01-05 |
KR20150013426A (en) | 2015-02-05 |
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