SG11201404587TA - Polishing composition and method for producing semiconductor substrate - Google Patents

Polishing composition and method for producing semiconductor substrate

Info

Publication number
SG11201404587TA
SG11201404587TA SG11201404587TA SG11201404587TA SG11201404587TA SG 11201404587T A SG11201404587T A SG 11201404587TA SG 11201404587T A SG11201404587T A SG 11201404587TA SG 11201404587T A SG11201404587T A SG 11201404587TA SG 11201404587T A SG11201404587T A SG 11201404587TA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
polishing composition
producing semiconductor
producing
polishing
Prior art date
Application number
SG11201404587TA
Other languages
English (en)
Inventor
Toshihiro Miwa
Hiroyuki Oda
Shinichiro Takami
Shuhei Takahashi
Yutaka Inoue
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201404587TA publication Critical patent/SG11201404587TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201404587TA 2012-02-10 2013-02-05 Polishing composition and method for producing semiconductor substrate SG11201404587TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012027495A JP6357296B2 (ja) 2012-02-10 2012-02-10 研磨用組成物、及び半導体基板の製造方法
PCT/JP2013/052585 WO2013118710A1 (ja) 2012-02-10 2013-02-05 研磨用組成物、及び半導体基板の製造方法

Publications (1)

Publication Number Publication Date
SG11201404587TA true SG11201404587TA (en) 2014-10-30

Family

ID=48947473

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201404587TA SG11201404587TA (en) 2012-02-10 2013-02-05 Polishing composition and method for producing semiconductor substrate
SG10201605995SA SG10201605995SA (en) 2012-02-10 2013-02-05 Polishing Composition And Method For Producing Semiconductor Substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201605995SA SG10201605995SA (en) 2012-02-10 2013-02-05 Polishing Composition And Method For Producing Semiconductor Substrate

Country Status (7)

Country Link
US (1) US20150014579A1 (ja)
JP (1) JP6357296B2 (ja)
KR (1) KR101965926B1 (ja)
DE (1) DE112013000912T5 (ja)
SG (2) SG11201404587TA (ja)
TW (1) TWI576416B (ja)
WO (1) WO2013118710A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105451940B (zh) * 2013-08-09 2018-12-11 福吉米株式会社 研磨完的研磨对象物的制造方法及研磨用组合物试剂盒
JP6295052B2 (ja) * 2013-09-26 2018-03-14 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法およびシリコンウエハ製造方法
JP6228032B2 (ja) * 2014-02-25 2017-11-08 株式会社フジミインコーポレーテッド 半導体基板を連続的に製造する方法
JP6246638B2 (ja) * 2014-03-24 2017-12-13 株式会社フジミインコーポレーテッド 研磨方法およびそれに用いられる研磨用組成物
JP6357356B2 (ja) 2014-06-09 2018-07-11 株式会社フジミインコーポレーテッド 研磨用組成物
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
KR102594932B1 (ko) * 2015-05-08 2023-10-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN104999365B (zh) * 2015-06-16 2018-02-16 东莞市中微纳米科技有限公司 蓝宝石晶片研磨抛光方法
CN106736875B (zh) * 2016-11-30 2019-01-11 江苏师范大学 一种蓝宝石整流罩的加工方法
JP6879798B2 (ja) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
KR20190134692A (ko) * 2017-03-31 2019-12-04 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP7212321B2 (ja) * 2017-12-22 2023-01-25 日産化学株式会社 レーザーマーク周辺の隆起を解消するための研磨用組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JPWO2005029563A1 (ja) 2003-09-24 2007-11-15 日本化学工業株式会社 シリコンウエハ研磨用組成物および研磨方法
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR101431299B1 (ko) * 2007-03-26 2014-08-20 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체, 및 반도체 장치의 화학 기계 연마 방법
JP5236283B2 (ja) 2007-12-28 2013-07-17 花王株式会社 ハードディスク基板用研磨液組成物
JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物
JP5759904B2 (ja) * 2010-01-29 2015-08-05 株式会社フジミインコーポレーテッド 半導体ウェーハの再生方法及び研磨用組成物
US8932952B2 (en) * 2010-04-30 2015-01-13 Sumco Corporation Method for polishing silicon wafer and polishing liquid therefor
KR101417833B1 (ko) * 2010-07-08 2014-08-06 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법

Also Published As

Publication number Publication date
TW201343884A (zh) 2013-11-01
WO2013118710A1 (ja) 2013-08-15
JP6357296B2 (ja) 2018-07-11
KR101965926B1 (ko) 2019-04-04
TWI576416B (zh) 2017-04-01
KR20140130156A (ko) 2014-11-07
DE112013000912T5 (de) 2014-11-06
SG10201605995SA (en) 2016-09-29
US20150014579A1 (en) 2015-01-15
JP2013165173A (ja) 2013-08-22

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