SG11201402475YA - Systems and methods for preparation of samples for sub-surface defect review - Google Patents

Systems and methods for preparation of samples for sub-surface defect review

Info

Publication number
SG11201402475YA
SG11201402475YA SG11201402475YA SG11201402475YA SG11201402475YA SG 11201402475Y A SG11201402475Y A SG 11201402475YA SG 11201402475Y A SG11201402475Y A SG 11201402475YA SG 11201402475Y A SG11201402475Y A SG 11201402475YA SG 11201402475Y A SG11201402475Y A SG 11201402475YA
Authority
SG
Singapore
Prior art keywords
samples
sub
preparation
systems
methods
Prior art date
Application number
SG11201402475YA
Other languages
English (en)
Inventor
Cecilia Campochiaro
Hong Xiao
Riet Michael Van
Benjamin Clarke
Harsh Sinha
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201402475YA publication Critical patent/SG11201402475YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11201402475YA 2011-11-29 2012-11-28 Systems and methods for preparation of samples for sub-surface defect review SG11201402475YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161564733P 2011-11-29 2011-11-29
PCT/US2012/066887 WO2013082181A1 (en) 2011-11-29 2012-11-28 Systems and methods for preparation of samples for sub-surface defect review
US13/687,244 US9318395B2 (en) 2011-11-29 2012-11-28 Systems and methods for preparation of samples for sub-surface defect review

Publications (1)

Publication Number Publication Date
SG11201402475YA true SG11201402475YA (en) 2014-06-27

Family

ID=48467234

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402475YA SG11201402475YA (en) 2011-11-29 2012-11-28 Systems and methods for preparation of samples for sub-surface defect review

Country Status (8)

Country Link
US (1) US9318395B2 (ja)
EP (1) EP2789008A4 (ja)
JP (1) JP6244307B2 (ja)
KR (1) KR101887730B1 (ja)
IL (1) IL232703B (ja)
SG (1) SG11201402475YA (ja)
TW (1) TWI608232B (ja)
WO (1) WO2013082181A1 (ja)

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* Cited by examiner, † Cited by third party
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US10902576B2 (en) * 2016-08-12 2021-01-26 Texas Instruments Incorporated System and method for electronic die inking after automatic visual defect inspection
US10928740B2 (en) 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
US11035804B2 (en) 2017-06-28 2021-06-15 Kla Corporation System and method for x-ray imaging and classification of volume defects
CN108061736B (zh) * 2017-11-14 2020-11-13 东旭光电科技股份有限公司 使用反射电子探针对玻璃缺陷进行分析的方法

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Also Published As

Publication number Publication date
US20130137193A1 (en) 2013-05-30
IL232703A0 (en) 2014-07-31
KR20140108662A (ko) 2014-09-12
TWI608232B (zh) 2017-12-11
EP2789008A1 (en) 2014-10-15
KR101887730B1 (ko) 2018-08-10
JP2014534452A (ja) 2014-12-18
EP2789008A4 (en) 2015-07-22
JP6244307B2 (ja) 2017-12-06
WO2013082181A1 (en) 2013-06-06
US9318395B2 (en) 2016-04-19
TW201333457A (zh) 2013-08-16
IL232703B (en) 2018-03-29

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