TWI608232B - 用於次表面缺陷再檢測之樣本之準備的系統與方法 - Google Patents

用於次表面缺陷再檢測之樣本之準備的系統與方法 Download PDF

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Publication number
TWI608232B
TWI608232B TW101144873A TW101144873A TWI608232B TW I608232 B TWI608232 B TW I608232B TW 101144873 A TW101144873 A TW 101144873A TW 101144873 A TW101144873 A TW 101144873A TW I608232 B TWI608232 B TW I608232B
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TW
Taiwan
Prior art keywords
defect
location
cutting
result file
electron microscope
Prior art date
Application number
TW101144873A
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English (en)
Chinese (zh)
Other versions
TW201333457A (zh
Inventor
西西里亞 坎柏契洛
蕭宏
萊爾特 麥可 梵
班傑明 詹姆士 湯瑪士 克拉克
赫許 辛哈
Original Assignee
克萊譚克公司
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Publication of TW201333457A publication Critical patent/TW201333457A/zh
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Publication of TWI608232B publication Critical patent/TWI608232B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW101144873A 2011-11-29 2012-11-29 用於次表面缺陷再檢測之樣本之準備的系統與方法 TWI608232B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161564733P 2011-11-29 2011-11-29
US13/687,244 US9318395B2 (en) 2011-11-29 2012-11-28 Systems and methods for preparation of samples for sub-surface defect review

Publications (2)

Publication Number Publication Date
TW201333457A TW201333457A (zh) 2013-08-16
TWI608232B true TWI608232B (zh) 2017-12-11

Family

ID=48467234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144873A TWI608232B (zh) 2011-11-29 2012-11-29 用於次表面缺陷再檢測之樣本之準備的系統與方法

Country Status (8)

Country Link
US (1) US9318395B2 (ja)
EP (1) EP2789008A4 (ja)
JP (1) JP6244307B2 (ja)
KR (1) KR101887730B1 (ja)
IL (1) IL232703B (ja)
SG (1) SG11201402475YA (ja)
TW (1) TWI608232B (ja)
WO (1) WO2013082181A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9165742B1 (en) * 2014-10-10 2015-10-20 Kla-Tencor Corporation Inspection site preparation
US10902576B2 (en) * 2016-08-12 2021-01-26 Texas Instruments Incorporated System and method for electronic die inking after automatic visual defect inspection
US10928740B2 (en) 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
US11035804B2 (en) 2017-06-28 2021-06-15 Kla Corporation System and method for x-ray imaging and classification of volume defects
CN108061736B (zh) * 2017-11-14 2020-11-13 东旭光电科技股份有限公司 使用反射电子探针对玻璃缺陷进行分析的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153916A1 (en) * 2001-02-20 2002-10-24 Samsung Electronics Co., Ltd. Method of identifying and analyzing semiconductor chip defects
CN1735866A (zh) * 2002-11-12 2006-02-15 Fei公司 缺陷分析仪
CN100465612C (zh) * 2005-06-10 2009-03-04 联华电子股份有限公司 缺陷检测方法
CN102087985B (zh) * 2009-12-03 2013-03-13 无锡华润上华半导体有限公司 晶圆缺陷的检测方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561293A (en) * 1995-04-20 1996-10-01 Advanced Micro Devices, Inc. Method of failure analysis with CAD layout navigation and FIB/SEM inspection
US5691812A (en) * 1996-03-22 1997-11-25 Ade Optical Systems Corporation Calibration standard for calibrating a defect inspection system and a method of forming same
US6122562A (en) * 1997-05-05 2000-09-19 Applied Materials, Inc. Method and apparatus for selectively marking a semiconductor wafer
CA2260436C (en) * 1998-01-28 2007-11-27 Chipworks Inc. Automated method of circuit analysis
US6324298B1 (en) * 1998-07-15 2001-11-27 August Technology Corp. Automated wafer defect inspection system and a process of performing such inspection
JP2000243338A (ja) 1999-02-22 2000-09-08 Hitachi Ltd 透過電子顕微鏡装置および透過電子検査装置並びに検査方法
JP3843637B2 (ja) * 1999-02-23 2006-11-08 株式会社日立製作所 試料作製方法および試料作製システム
US6566885B1 (en) * 1999-12-14 2003-05-20 Kla-Tencor Multiple directional scans of test structures on semiconductor integrated circuits
US6559457B1 (en) * 2000-03-23 2003-05-06 Advanced Micro Devices, Inc. System and method for facilitating detection of defects on a wafer
CA2370766C (en) * 2000-10-18 2003-09-09 Chipworks Design analysis workstation for analyzing integrated circuits
US7088852B1 (en) * 2001-04-11 2006-08-08 Advanced Micro Devices, Inc. Three-dimensional tomography
WO2003019523A1 (en) * 2001-08-23 2003-03-06 Fei Company Graphical automated machine control and metrology
US6670610B2 (en) * 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
JP2003166918A (ja) * 2001-11-29 2003-06-13 Sumitomo Mitsubishi Silicon Corp 半導体単結晶中の結晶欠陥観察用試料の作製方法
JP2004071486A (ja) * 2002-08-09 2004-03-04 Seiko Instruments Inc 集束荷電粒子ビーム装置
US6959251B2 (en) 2002-08-23 2005-10-25 Kla-Tencor Technologies, Corporation Inspection system setup techniques
JP4088533B2 (ja) * 2003-01-08 2008-05-21 株式会社日立ハイテクノロジーズ 試料作製装置および試料作製方法
JP2004227842A (ja) * 2003-01-21 2004-08-12 Canon Inc プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法
TWI222735B (en) * 2003-08-01 2004-10-21 Promos Technologies Inc Alignment mark and photolithography alignment method for eliminating process bias error
JP4096916B2 (ja) * 2004-06-07 2008-06-04 株式会社日立製作所 試料解析方法および装置
JP2006170738A (ja) * 2004-12-15 2006-06-29 Hitachi High-Technologies Corp 半導体デバイスの欠陥解析装置及び方法
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
JP4927345B2 (ja) * 2005-04-07 2012-05-09 ルネサスエレクトロニクス株式会社 試料体の加工観察装置及び試料体の観察方法
JP4641924B2 (ja) * 2005-10-21 2011-03-02 株式会社日立ハイテクノロジーズ 半導体検査装置及び半導体検査方法
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP4533306B2 (ja) * 2005-12-06 2010-09-01 株式会社日立ハイテクノロジーズ 半導体ウェハ検査方法及び欠陥レビュー装置
KR20070069810A (ko) 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 집속 이온비임장비를 이용한 결함 위치 인식시스템
JP4812484B2 (ja) * 2006-03-24 2011-11-09 株式会社日立ハイテクノロジーズ ボルテージコントラストを伴った欠陥をレビューする方法およびその装置
JP4741408B2 (ja) * 2006-04-27 2011-08-03 株式会社荏原製作所 試料パターン検査装置におけるxy座標補正装置及び方法
EP2104864B1 (en) * 2006-10-20 2015-03-04 FEI Company Method for creating s/tem sample and sample structure
JP4597155B2 (ja) * 2007-03-12 2010-12-15 株式会社日立ハイテクノロジーズ データ処理装置、およびデータ処理方法
JP4974737B2 (ja) * 2007-04-05 2012-07-11 株式会社日立ハイテクノロジーズ 荷電粒子システム
JP5117764B2 (ja) * 2007-05-22 2013-01-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム加工装置
JP2008293798A (ja) * 2007-05-24 2008-12-04 Toyota Industries Corp 有機el素子の製造方法
US7636156B2 (en) * 2007-06-15 2009-12-22 Qimonda Ag Wafer inspection system and method
JP4769828B2 (ja) * 2008-02-28 2011-09-07 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
US8781219B2 (en) * 2008-10-12 2014-07-15 Fei Company High accuracy beam placement for local area navigation
CN102246258B (zh) * 2008-10-12 2015-09-02 Fei公司 用于局部区域导航的高精确度射束放置
KR20100062400A (ko) 2008-12-02 2010-06-10 주식회사 동부하이텍 반도체 웨이퍼의 결함 분석 방법
JP5315040B2 (ja) * 2008-12-26 2013-10-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線装置による画像取得条件決定方法
JP5175008B2 (ja) * 2009-02-20 2013-04-03 株式会社日立ハイテクサイエンス ミクロ断面加工方法
TWI447348B (zh) * 2012-02-10 2014-08-01 Nat Synchrotron Radiation Res Ct 平台定位系統及其方法
US9367655B2 (en) * 2012-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Topography-aware lithography pattern check

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153916A1 (en) * 2001-02-20 2002-10-24 Samsung Electronics Co., Ltd. Method of identifying and analyzing semiconductor chip defects
CN1735866A (zh) * 2002-11-12 2006-02-15 Fei公司 缺陷分析仪
CN100465612C (zh) * 2005-06-10 2009-03-04 联华电子股份有限公司 缺陷检测方法
CN102087985B (zh) * 2009-12-03 2013-03-13 无锡华润上华半导体有限公司 晶圆缺陷的检测方法

Also Published As

Publication number Publication date
US20130137193A1 (en) 2013-05-30
IL232703A0 (en) 2014-07-31
SG11201402475YA (en) 2014-06-27
KR20140108662A (ko) 2014-09-12
EP2789008A1 (en) 2014-10-15
KR101887730B1 (ko) 2018-08-10
JP2014534452A (ja) 2014-12-18
EP2789008A4 (en) 2015-07-22
JP6244307B2 (ja) 2017-12-06
WO2013082181A1 (en) 2013-06-06
US9318395B2 (en) 2016-04-19
TW201333457A (zh) 2013-08-16
IL232703B (en) 2018-03-29

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