SG11201400942YA - Memory cells and memory cell arrays - Google Patents

Memory cells and memory cell arrays

Info

Publication number
SG11201400942YA
SG11201400942YA SG11201400942YA SG11201400942YA SG11201400942YA SG 11201400942Y A SG11201400942Y A SG 11201400942YA SG 11201400942Y A SG11201400942Y A SG 11201400942YA SG 11201400942Y A SG11201400942Y A SG 11201400942YA SG 11201400942Y A SG11201400942Y A SG 11201400942YA
Authority
SG
Singapore
Prior art keywords
cell arrays
memory
memory cell
memory cells
cells
Prior art date
Application number
SG11201400942YA
Other languages
English (en)
Inventor
Scott E Sills
Gurtej S Sandhu
Sanh D Tang
John Smythe
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201400942YA publication Critical patent/SG11201400942YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
SG11201400942YA 2011-10-17 2012-09-18 Memory cells and memory cell arrays SG11201400942YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/275,168 US8536561B2 (en) 2011-10-17 2011-10-17 Memory cells and memory cell arrays
PCT/US2012/055928 WO2013058917A1 (en) 2011-10-17 2012-09-18 Memory cells and memory cell arrays

Publications (1)

Publication Number Publication Date
SG11201400942YA true SG11201400942YA (en) 2014-09-26

Family

ID=48085381

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400942YA SG11201400942YA (en) 2011-10-17 2012-09-18 Memory cells and memory cell arrays

Country Status (8)

Country Link
US (4) US8536561B2 (zh)
EP (1) EP2769414B1 (zh)
JP (1) JP6007255B2 (zh)
KR (1) KR101501419B1 (zh)
CN (1) CN103858231B (zh)
SG (1) SG11201400942YA (zh)
TW (1) TWI470742B (zh)
WO (1) WO2013058917A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9807796B2 (en) * 2011-09-02 2017-10-31 Qualcomm Incorporated Systems and methods for resetting a network station
US8536561B2 (en) 2011-10-17 2013-09-17 Micron Technology, Inc. Memory cells and memory cell arrays
US8759807B2 (en) 2012-03-22 2014-06-24 Micron Technology, Inc. Memory cells
CN104303300B (zh) * 2012-07-31 2017-08-15 慧与发展有限责任合伙企业 非易失性电阻存储单元
US9680094B2 (en) * 2012-08-30 2017-06-13 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
US9691981B2 (en) 2013-05-22 2017-06-27 Micron Technology, Inc. Memory cell structures
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
JP2015060890A (ja) * 2013-09-17 2015-03-30 株式会社東芝 記憶装置
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US9691475B2 (en) 2015-03-19 2017-06-27 Micron Technology, Inc. Constructions comprising stacked memory arrays
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
KR102465966B1 (ko) 2016-01-27 2022-11-10 삼성전자주식회사 메모리 소자, 및 그 메모리 소자를 포함한 전자 장치
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
US10424374B2 (en) 2017-04-28 2019-09-24 Micron Technology, Inc. Programming enhancement in self-selecting memory
US10153196B1 (en) * 2017-08-24 2018-12-11 Micron Technology, Inc. Arrays of cross-point memory structures
US10147875B1 (en) * 2017-08-31 2018-12-04 Micron Technology, Inc. Semiconductor devices and electronic systems having memory structures
US11289647B2 (en) * 2017-10-19 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive random access memory device
US10854813B2 (en) 2018-02-09 2020-12-01 Micron Technology, Inc. Dopant-modulated etching for memory devices
US10541364B2 (en) 2018-02-09 2020-01-21 Micron Technology, Inc. Memory cells with asymmetrical electrode interfaces
US10693065B2 (en) 2018-02-09 2020-06-23 Micron Technology, Inc. Tapered cell profile and fabrication
US10424730B2 (en) 2018-02-09 2019-09-24 Micron Technology, Inc. Tapered memory cell profiles
JP2020047848A (ja) * 2018-09-20 2020-03-26 キオクシア株式会社 半導体メモリ
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304754B2 (ja) 1996-04-11 2002-07-22 三菱電機株式会社 集積回路の多段埋め込み配線構造
DE10036724A1 (de) * 2000-07-27 2002-02-14 Infineon Technologies Ag Verfahren zur Bildung eines Grabens in einem Halbleitersubstrat
US6709874B2 (en) 2001-01-24 2004-03-23 Infineon Technologies Ag Method of manufacturing a metal cap layer for preventing damascene conductive lines from oxidation
US6887792B2 (en) 2002-09-17 2005-05-03 Hewlett-Packard Development Company, L.P. Embossed mask lithography
US6815704B1 (en) * 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
DE102004056973A1 (de) * 2004-11-25 2006-06-01 Infineon Technologies Ag Herstellungsverfahren mit selbstjustierter Anordnung von Festkörperelektrolyt-Speicherzellen minimaler Strukturgröße
US7365382B2 (en) 2005-02-28 2008-04-29 Infineon Technologies Ag Semiconductor memory having charge trapping memory cells and fabrication method thereof
KR100650753B1 (ko) * 2005-06-10 2006-11-27 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
US7361586B2 (en) 2005-07-01 2008-04-22 Spansion Llc Preamorphization to minimize void formation
US7449354B2 (en) 2006-01-05 2008-11-11 Fairchild Semiconductor Corporation Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch
KR100713936B1 (ko) * 2006-04-14 2007-05-07 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
US7435648B2 (en) 2006-07-26 2008-10-14 Macronix International Co., Ltd. Methods of trench and contact formation in memory cells
KR100791077B1 (ko) 2006-12-13 2008-01-03 삼성전자주식회사 작은 전이영역을 갖는 상전이 메모리소자 및 그 제조방법
US20080247214A1 (en) * 2007-04-03 2008-10-09 Klaus Ufert Integrated memory
US7800094B2 (en) 2007-06-11 2010-09-21 Macronix International Co., Ltd. Resistance memory with tungsten compound and manufacturing
US7742323B2 (en) 2007-07-26 2010-06-22 Unity Semiconductor Corporation Continuous plane of thin-film materials for a two-terminal cross-point memory
US7795596B2 (en) 2008-01-03 2010-09-14 Alcatel-Lucent Usa Inc. Cloaking device detection system
US8034655B2 (en) * 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
WO2009128142A1 (ja) * 2008-04-15 2009-10-22 株式会社 東芝 情報記録再生装置
JP2009260052A (ja) 2008-04-17 2009-11-05 Panasonic Corp 不揮発性半導体記憶装置とその製造方法および半導体装置
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
US8114468B2 (en) 2008-06-18 2012-02-14 Boise Technology, Inc. Methods of forming a non-volatile resistive oxide memory array
JP2010027753A (ja) * 2008-07-17 2010-02-04 Panasonic Corp 不揮発性記憶素子およびその製造方法
US8445883B2 (en) * 2008-10-30 2013-05-21 Panasonic Corporation Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010225741A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
JP2010251529A (ja) * 2009-04-16 2010-11-04 Sony Corp 半導体記憶装置およびその製造方法
US8269203B2 (en) * 2009-07-02 2012-09-18 Actel Corporation Resistive RAM devices for programmable logic devices
JP5558090B2 (ja) * 2009-12-16 2014-07-23 株式会社東芝 抵抗変化型メモリセルアレイ
US8416609B2 (en) 2010-02-15 2013-04-09 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8437174B2 (en) 2010-02-15 2013-05-07 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
JP5521612B2 (ja) 2010-02-15 2014-06-18 ソニー株式会社 不揮発性半導体メモリデバイス
US8409915B2 (en) 2010-09-20 2013-04-02 Micron Technology, Inc. Methods of forming memory cells
US8536561B2 (en) 2011-10-17 2013-09-17 Micron Technology, Inc. Memory cells and memory cell arrays

Also Published As

Publication number Publication date
KR20140068150A (ko) 2014-06-05
US20130221318A1 (en) 2013-08-29
US8536561B2 (en) 2013-09-17
TWI470742B (zh) 2015-01-21
JP2014528656A (ja) 2014-10-27
KR101501419B1 (ko) 2015-03-18
TW201334123A (zh) 2013-08-16
JP6007255B2 (ja) 2016-10-12
US20130092894A1 (en) 2013-04-18
EP2769414A1 (en) 2014-08-27
US20140339494A1 (en) 2014-11-20
US20150221864A1 (en) 2015-08-06
EP2769414A4 (en) 2015-07-01
US9123888B2 (en) 2015-09-01
US8822974B2 (en) 2014-09-02
CN103858231A (zh) 2014-06-11
WO2013058917A1 (en) 2013-04-25
EP2769414B1 (en) 2016-12-07
CN103858231B (zh) 2016-10-12
US9214627B2 (en) 2015-12-15

Similar Documents

Publication Publication Date Title
SG11201400942YA (en) Memory cells and memory cell arrays
EP2597682A4 (en) SOLAR CELL ARRANGEMENT
EP2896066A4 (en) METHOD FOR PRODUCING MEMORY CELLS AND ARRAYS FROM MAGNETIC MEMORY CELL STRUCTURES AND ASSOCIATED MEMORY CELLS AND MEMORY CELL STRUCTURES
EP2716835A4 (en) SOLAR CELL ARRANGEMENT
EP2727147A4 (en) MEMORY CELL STRUCTURES
EP2647048A4 (en) NETWORKS OF NON-VOLATILE MEMORY CELLS
EP2780952A4 (en) INTELLIGENT PHOTOVOLTAIC CELLS AND ASSOCIATED MODULES
EP2737524A4 (en) VERTICAL STORAGE CELL
EP2697828A4 (en) MEMORY CELLS, METHODS OF FORMING MEMORY CELLS, AND METHODS OF FORMING MEMORY ARRAYS
AU338030S (en) Solar cell
EP2709128A4 (en) ELECTROCHEMICAL CELL
EP2751846A4 (en) SOLAR CELL
EP2772946A4 (en) PHOTOPIL MODULE AND PHOTOPIL SET
EP2626910A4 (en) PHOTOVOLTAIC CELL
EP2867897A4 (en) MULTI-STAGE CELL MEMORY
EP2555304A4 (en) BATTERY CELL
EP2717322A4 (en) SOLAR CELL
EP2731147A4 (en) SOLAR CELL MODULE AND SOLAR CELL
SG11201503391QA (en) Solar cell and solar cell module
GB201118641D0 (en) Electrochemical cell
EP2579319A4 (en) SOLAR CELL MODULE AND SOLAR CELL
GB2508221B (en) Low-Power SRAM Cells
ZA201208048B (en) Dye sensitised solar cell
GB201111916D0 (en) Single poly non-volatile memory cells
GB201001156D0 (en) Photovoltaic cell