SG11201400775PA - Composition and method for polishing aluminum semiconductor substrates - Google Patents
Composition and method for polishing aluminum semiconductor substratesInfo
- Publication number
- SG11201400775PA SG11201400775PA SG11201400775PA SG11201400775PA SG11201400775PA SG 11201400775P A SG11201400775P A SG 11201400775PA SG 11201400775P A SG11201400775P A SG 11201400775PA SG 11201400775P A SG11201400775P A SG 11201400775PA SG 11201400775P A SG11201400775P A SG 11201400775PA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- semiconductor substrates
- polishing aluminum
- aluminum semiconductor
- polishing
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/237,881 US8623766B2 (en) | 2011-09-20 | 2011-09-20 | Composition and method for polishing aluminum semiconductor substrates |
| PCT/US2012/054390 WO2013043400A1 (fr) | 2011-09-20 | 2012-09-10 | Composition et procédé de polissage de substrats semi-conducteurs en aluminium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201400775PA true SG11201400775PA (en) | 2014-04-28 |
Family
ID=47881054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201400775PA SG11201400775PA (en) | 2011-09-20 | 2012-09-10 | Composition and method for polishing aluminum semiconductor substrates |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8623766B2 (fr) |
| EP (1) | EP2758989B1 (fr) |
| JP (1) | JP6130380B2 (fr) |
| KR (1) | KR101986863B1 (fr) |
| SG (1) | SG11201400775PA (fr) |
| TW (1) | TWI463003B (fr) |
| WO (1) | WO2013043400A1 (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| KR20140024634A (ko) * | 2012-08-20 | 2014-03-03 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| TWI561620B (en) * | 2014-06-20 | 2016-12-11 | Cabot Microelectronics Corp | Cmp slurry compositions and methods for aluminum polishing |
| CN104593776B (zh) * | 2014-12-24 | 2017-11-03 | 上海新安纳电子科技有限公司 | 一种用于钛的化学机械抛光液 |
| CN108290267B (zh) * | 2015-10-30 | 2021-04-20 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
| US10066126B2 (en) * | 2016-01-06 | 2018-09-04 | Cabot Microelectronics Corporation | Tungsten processing slurry with catalyst |
| US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
| US10325779B2 (en) * | 2016-03-30 | 2019-06-18 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
| US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
| US11043151B2 (en) | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| JP7034667B2 (ja) * | 2017-10-24 | 2022-03-14 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| JP7183863B2 (ja) * | 2018-03-13 | 2022-12-06 | Jsr株式会社 | 化学機械研磨用組成物及び化学機械研磨方法 |
| US10787592B1 (en) * | 2019-05-16 | 2020-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, I | Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004514266A (ja) * | 1999-12-14 | 2004-05-13 | ロデール ホールディングス インコーポレイテッド | 貴金属用研磨組成物 |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| KR101258843B1 (ko) * | 2005-11-29 | 2013-05-06 | 삼성코닝정밀소재 주식회사 | 금속 배선용 화학기계적 연마 조성물 |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| KR101418626B1 (ko) * | 2007-02-27 | 2014-07-14 | 히타치가세이가부시끼가이샤 | 금속용 연마액 및 연마방법 |
| JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| TW200920828A (en) * | 2007-09-20 | 2009-05-16 | Fujifilm Corp | Polishing slurry for metal and chemical mechanical polishing method |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| TW201038690A (en) * | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| JP5371416B2 (ja) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
-
2011
- 2011-09-20 US US13/237,881 patent/US8623766B2/en active Active
-
2012
- 2012-09-10 WO PCT/US2012/054390 patent/WO2013043400A1/fr active Application Filing
- 2012-09-10 KR KR1020147010349A patent/KR101986863B1/ko active IP Right Grant
- 2012-09-10 EP EP12834051.0A patent/EP2758989B1/fr active Active
- 2012-09-10 SG SG11201400775PA patent/SG11201400775PA/en unknown
- 2012-09-10 JP JP2014531856A patent/JP6130380B2/ja active Active
- 2012-09-13 TW TW101133443A patent/TWI463003B/zh active
-
2013
- 2013-12-18 US US14/132,983 patent/US20140103250A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN103946958A (zh) | 2014-07-23 |
| WO2013043400A1 (fr) | 2013-03-28 |
| KR20140069184A (ko) | 2014-06-09 |
| JP2014532305A (ja) | 2014-12-04 |
| TW201313886A (zh) | 2013-04-01 |
| US8623766B2 (en) | 2014-01-07 |
| EP2758989A1 (fr) | 2014-07-30 |
| TWI463003B (zh) | 2014-12-01 |
| EP2758989B1 (fr) | 2020-04-01 |
| EP2758989A4 (fr) | 2015-09-16 |
| JP6130380B2 (ja) | 2017-05-17 |
| US20140103250A1 (en) | 2014-04-17 |
| KR101986863B1 (ko) | 2019-06-07 |
| US20130072021A1 (en) | 2013-03-21 |
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