SG10202000508YA - Memory device based on multi-bit perpendicular magnetic tunnel junction - Google Patents
Memory device based on multi-bit perpendicular magnetic tunnel junctionInfo
- Publication number
- SG10202000508YA SG10202000508YA SG10202000508YA SG10202000508YA SG10202000508YA SG 10202000508Y A SG10202000508Y A SG 10202000508YA SG 10202000508Y A SG10202000508Y A SG 10202000508YA SG 10202000508Y A SG10202000508Y A SG 10202000508YA SG 10202000508Y A SG10202000508Y A SG 10202000508YA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- device based
- tunnel junction
- perpendicular magnetic
- magnetic tunnel
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190140529A KR102117393B1 (ko) | 2019-11-05 | 2019-11-05 | 멀티 비트 수직 자기 터널링 접합에 기반한 메모리 소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202000508YA true SG10202000508YA (en) | 2021-06-29 |
Family
ID=71083095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202000508YA SG10202000508YA (en) | 2019-11-05 | 2020-01-20 | Memory device based on multi-bit perpendicular magnetic tunnel junction |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11296276B2 (ko) |
| KR (1) | KR102117393B1 (ko) |
| CN (1) | CN112786779B (ko) |
| SG (1) | SG10202000508YA (ko) |
| TW (1) | TWI734378B (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11169227B2 (en) * | 2019-08-28 | 2021-11-09 | Western Digital Technologies, Inc. | Dual free layer TMR magnetic field sensor |
| US11152048B1 (en) * | 2020-04-20 | 2021-10-19 | Western Digital Technologies, Inc. | Tunneling metamagnetic resistance memory device and methods of operating the same |
| US11200934B2 (en) | 2020-04-20 | 2021-12-14 | Western Digital Technologies, Inc. | Tunneling metamagnetic resistance memory device and methods of operating the same |
| US12108610B2 (en) | 2021-05-06 | 2024-10-01 | Qualcomm Incorporated | One transistor one magnetic tunnel junction multiple bit magnetoresistive random access memory cell |
| US20220367790A1 (en) * | 2021-05-12 | 2022-11-17 | Globalfoundries Singapore Pte. Ltd. | Non-volatile memory elements formed in conjunction with a magnetic via |
| JP2023043732A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 磁気記憶装置 |
| KR102693380B1 (ko) * | 2023-03-21 | 2024-08-12 | 한양대학교 산학협력단 | 스커미온 메모리 소자 및 이를 이용한 크로스바 어레이 회로 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002334971A (ja) * | 2001-05-09 | 2002-11-22 | Nec Corp | 磁性メモリ及びその動作方法 |
| JP4970113B2 (ja) * | 2007-03-30 | 2012-07-04 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
| US8907436B2 (en) | 2010-08-24 | 2014-12-09 | Samsung Electronics Co., Ltd. | Magnetic devices having perpendicular magnetic tunnel junction |
| US9196332B2 (en) | 2011-02-16 | 2015-11-24 | Avalanche Technology, Inc. | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer |
| CN102938257B (zh) | 2011-08-15 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 磁隧道结、其制作方法及含磁隧道结的存储单元 |
| US9443577B2 (en) * | 2014-05-19 | 2016-09-13 | Avalanche Technology, Inc. | Voltage-switched magnetic random access memory (MRAM) and method for using the same |
| US10580964B2 (en) * | 2015-03-18 | 2020-03-03 | Industry-University Cooperation Foundation Hanyang University | Memory device |
| US9337415B1 (en) | 2015-03-20 | 2016-05-10 | HGST Netherlands B.V. | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy |
| EP3314674A4 (en) * | 2015-06-26 | 2019-02-27 | Intel Corporation | VERTICAL MAGNETIC MEMORY WITH REDUCED SWITCHGEAR |
| US9831422B2 (en) | 2015-10-21 | 2017-11-28 | Samsung Electronics Co., Ltd. | Magnetic memory devices having perpendicular magnetic tunnel junction |
| KR101956975B1 (ko) * | 2016-02-05 | 2019-03-11 | 한양대학교 산학협력단 | 메모리 소자 |
| US10354710B2 (en) * | 2017-07-24 | 2019-07-16 | Sandisk Technologies Llc | Magnetoelectric random access memory array and methods of operating the same |
| WO2019143052A1 (ko) * | 2018-01-17 | 2019-07-25 | 한양대학교 산학협력단 | 메모리 소자 |
| KR102169622B1 (ko) * | 2018-01-17 | 2020-10-26 | 한양대학교 산학협력단 | 메모리 소자 |
| EP3664094B1 (en) * | 2018-12-06 | 2022-08-24 | IMEC vzw | A magnetic tunnel junction unit and a memory device |
-
2019
- 2019-11-05 KR KR1020190140529A patent/KR102117393B1/ko active IP Right Grant
- 2019-11-19 US US16/688,510 patent/US11296276B2/en active Active
-
2020
- 2020-01-07 CN CN202010014791.9A patent/CN112786779B/zh active Active
- 2020-01-20 SG SG10202000508YA patent/SG10202000508YA/en unknown
- 2020-02-12 TW TW109104286A patent/TWI734378B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US11296276B2 (en) | 2022-04-05 |
| TW202119610A (zh) | 2021-05-16 |
| KR102117393B1 (ko) | 2020-06-01 |
| US20210135091A1 (en) | 2021-05-06 |
| CN112786779A (zh) | 2021-05-11 |
| TWI734378B (zh) | 2021-07-21 |
| CN112786779B (zh) | 2024-07-02 |
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