EP3699955A4 - Tunnel magnetoresistance effect element, magnetic memory, and built-in memory - Google Patents
Tunnel magnetoresistance effect element, magnetic memory, and built-in memory Download PDFInfo
- Publication number
- EP3699955A4 EP3699955A4 EP17929307.1A EP17929307A EP3699955A4 EP 3699955 A4 EP3699955 A4 EP 3699955A4 EP 17929307 A EP17929307 A EP 17929307A EP 3699955 A4 EP3699955 A4 EP 3699955A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- memory
- built
- effect element
- magnetoresistance effect
- tunnel magnetoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/037420 WO2019077663A1 (en) | 2017-10-16 | 2017-10-16 | Tunnel magnetoresistance effect element, magnetic memory, and built-in memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP3699955A1 EP3699955A1 (en) | 2020-08-26 |
| EP3699955A4 true EP3699955A4 (en) | 2021-06-09 |
Family
ID=66174361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP17929307.1A Pending EP3699955A4 (en) | 2017-10-16 | 2017-10-16 | Tunnel magnetoresistance effect element, magnetic memory, and built-in memory |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10564229B2 (en) |
| EP (1) | EP3699955A4 (en) |
| JP (1) | JP6658982B2 (en) |
| KR (1) | KR102354021B1 (en) |
| CN (2) | CN111226312B (en) |
| WO (1) | WO2019077663A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019077662A1 (en) * | 2017-10-16 | 2019-04-25 | Tdk株式会社 | Tunnel magnetoresistance effect element, magnetic memory, and built-in memory |
| US11476415B2 (en) * | 2018-11-30 | 2022-10-18 | International Business Machines Corporation | Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features |
| WO2023228389A1 (en) * | 2022-05-26 | 2023-11-30 | Tdk株式会社 | Magnetoresistive effect element and method for producing magnetoresistive effect element |
| CN116847715B (en) * | 2023-08-30 | 2023-11-17 | 北京芯可鉴科技有限公司 | Spin-orbit-moment magnetic memory cell based on exchange bias and magnetic random access memory |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9425387B1 (en) * | 2015-09-08 | 2016-08-23 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing |
| US20170140804A1 (en) * | 2015-11-16 | 2017-05-18 | Samsung Electronics Co., Ltd. | Magnetic junctions having elongated free layers |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5586028A (en) | 1993-12-07 | 1996-12-17 | Honda Giken Kogyo Kabushiki Kaisha | Road surface condition-detecting system and anti-lock brake system employing same |
| US5768956A (en) | 1996-03-28 | 1998-06-23 | Coonrad; Todd Douglas | Striking tool |
| JP3325868B2 (en) * | 2000-01-18 | 2002-09-17 | ティーディーケイ株式会社 | Method of manufacturing tunnel magnetoresistive element, method of manufacturing thin film magnetic head, and method of manufacturing memory element |
| JP2005032780A (en) * | 2003-07-07 | 2005-02-03 | Tdk Corp | Magnetoresistive effect element, magnetic head using the same, head suspension assembly, and magnetic disk unit |
| JP2006237377A (en) * | 2005-02-25 | 2006-09-07 | Tdk Corp | Magnetoresistance effect element and manufacturing method thereof |
| JP2007095765A (en) * | 2005-09-27 | 2007-04-12 | Fuji Electric Holdings Co Ltd | Multiple-value recording spin injection magnetization inverting element and device using the same |
| JP4384183B2 (en) * | 2007-01-26 | 2009-12-16 | 株式会社東芝 | Magnetoresistive element and magnetic memory |
| JP5191717B2 (en) * | 2007-10-05 | 2013-05-08 | 株式会社東芝 | Magnetic recording element, manufacturing method thereof, and magnetic memory |
| US8004881B2 (en) | 2007-12-19 | 2011-08-23 | Qualcomm Incorporated | Magnetic tunnel junction device with separate read and write paths |
| JP5151503B2 (en) * | 2008-01-24 | 2013-02-27 | Ｔｄｋ株式会社 | Magnetic device and magnetic memory |
| JP2010034153A (en) * | 2008-07-25 | 2010-02-12 | Toshiba Corp | Magnetic random access memory and method for writing the same |
| WO2010119928A1 (en) | 2009-04-16 | 2010-10-21 | 独立行政法人物質・材料研究機構 | Ferromagnetic tunnel junction structure, and magnetoresistive effect element and spintronics device each comprising same |
| US9450177B2 (en) | 2010-03-10 | 2016-09-20 | Tohoku University | Magnetoresistive element and magnetic memory |
| JP5502627B2 (en) * | 2010-07-09 | 2014-05-28 | 株式会社東芝 | Magnetic random access memory and manufacturing method thereof |
| US9006704B2 (en) | 2011-02-11 | 2015-04-14 | Headway Technologies, Inc. | Magnetic element with improved out-of-plane anisotropy for spintronic applications |
| JP5988019B2 (en) | 2012-02-27 | 2016-09-07 | 国立研究開発法人物質・材料研究機構 | Ferromagnetic tunnel junction, magnetoresistive effect element and spintronic device using the same |
| US8710603B2 (en) * | 2012-02-29 | 2014-04-29 | Headway Technologies, Inc. | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications |
| US8860156B2 (en) | 2012-09-11 | 2014-10-14 | Headway Technologies, Inc. | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM |
| US8921961B2 (en) | 2012-09-14 | 2014-12-30 | Headway Technologies, Inc. | Storage element for STT MRAM applications |
| US8865008B2 (en) * | 2012-10-25 | 2014-10-21 | Headway Technologies, Inc. | Two step method to fabricate small dimension devices for magnetic recording applications |
| JP2014110356A (en) * | 2012-12-03 | 2014-06-12 | Nippon Hoso Kyokai <Nhk> | Spin injection magnetization reversal element |
| JP5865858B2 (en) * | 2013-03-22 | 2016-02-17 | 株式会社東芝 | Magnetoresistive element and method for manufacturing magnetoresistive element |
| US9183858B2 (en) * | 2014-01-28 | 2015-11-10 | HGST Netherlands B.V. | Dual capping layer utilized in a magnetoresistive effect sensor |
| JP6139444B2 (en) * | 2014-03-18 | 2017-05-31 | 株式会社東芝 | Magnetoresistive element, method for manufacturing magnetoresistive element, and magnetic memory |
| CN106104827B (en) * | 2014-03-26 | 2019-04-16 | 英特尔公司 | It is used to form the technology of spin transfer torque memory (STTM) element with ring shaped contact portion |
| JP2015201515A (en) * | 2014-04-07 | 2015-11-12 | Tdk株式会社 | Thin film magnetic element and high frequency device with the same |
| US10026888B2 (en) * | 2014-08-06 | 2018-07-17 | Toshiba Memory Corporation | Magnetoresistive effect element and magnetic memory |
| JP2015038998A (en) * | 2014-09-12 | 2015-02-26 | 株式会社東芝 | Magnetic recording element and magnetic memory |
| KR102214507B1 (en) * | 2014-09-15 | 2021-02-09 | 삼성전자 주식회사 | Magnetic memory device |
| US10014465B1 (en) * | 2017-04-03 | 2018-07-03 | Headway Technologies, Inc. | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy |
| US10573449B2 (en) * | 2017-10-16 | 2020-02-25 | Tdk Corporation | Tunnel magnetoresistive effect element |
-
2017
- 2017-10-16 US US16/080,910 patent/US10564229B2/en active Active
- 2017-10-16 JP JP2019544077A patent/JP6658982B2/en active Active
- 2017-10-16 WO PCT/JP2017/037420 patent/WO2019077663A1/en unknown
- 2017-10-16 CN CN201780095969.3A patent/CN111226312B/en active Active
- 2017-10-16 EP EP17929307.1A patent/EP3699955A4/en active Pending
- 2017-10-16 CN CN202311700087.9A patent/CN117479817A/en active Pending
- 2017-10-16 KR KR1020207013415A patent/KR102354021B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9425387B1 (en) * | 2015-09-08 | 2016-08-23 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing |
| US20170140804A1 (en) * | 2015-11-16 | 2017-05-18 | Samsung Electronics Co., Ltd. | Magnetic junctions having elongated free layers |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2019077663A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3699955A1 (en) | 2020-08-26 |
| CN117479817A (en) | 2024-01-30 |
| US10564229B2 (en) | 2020-02-18 |
| CN111226312A (en) | 2020-06-02 |
| US20190178956A1 (en) | 2019-06-13 |
| CN111226312B (en) | 2024-01-05 |
| JPWO2019077663A1 (en) | 2019-12-19 |
| KR102354021B1 (en) | 2022-01-24 |
| WO2019077663A1 (en) | 2019-04-25 |
| JP6658982B2 (en) | 2020-03-04 |
| KR20200069337A (en) | 2020-06-16 |
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Legal Events
| Date | Code | Title | Description |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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| STAA | Information on the status of an ep patent application or granted ep patent |
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| 17P | Request for examination filed |
Effective date: 20200507 |
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| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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| AX | Request for extension of the european patent |
Extension state: BA ME |
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| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20210507 |
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| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/8239 20060101AFI20210430BHEP Ipc: H01L 27/105 20060101ALI20210430BHEP |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
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| 17Q | First examination report despatched |
Effective date: 20231218 |