SG10201911400WA - Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents
Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG10201911400WA SG10201911400WA SG10201911400WA SG10201911400WA SG10201911400WA SG 10201911400W A SG10201911400W A SG 10201911400WA SG 10201911400W A SG10201911400W A SG 10201911400WA SG 10201911400W A SG10201911400W A SG 10201911400WA SG 10201911400W A SG10201911400W A SG 10201911400WA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- reflective mask
- reflective
- film
- semiconductor device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015121712 | 2015-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201911400WA true SG10201911400WA (en) | 2020-02-27 |
Family
ID=57545764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911400WA SG10201911400WA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| SG11201710317RA SG11201710317RA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201710317RA SG11201710317RA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10606166B2 (enrdf_load_stackoverflow) |
| JP (3) | JP6815995B2 (enrdf_load_stackoverflow) |
| KR (2) | KR102653351B1 (enrdf_load_stackoverflow) |
| SG (2) | SG10201911400WA (enrdf_load_stackoverflow) |
| TW (2) | TWI708993B (enrdf_load_stackoverflow) |
| WO (1) | WO2016204051A1 (enrdf_load_stackoverflow) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102653351B1 (ko) | 2015-06-17 | 2024-04-02 | 호야 가부시키가이샤 | 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| JP6792901B2 (ja) * | 2016-03-31 | 2020-12-02 | Hoya株式会社 | 反射型マスクブランクの製造方法、反射型マスクブランク、反射型マスクの製造方法、反射型マスク、及び半導体装置の製造方法 |
| JP6475400B2 (ja) * | 2017-01-17 | 2019-02-27 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6863169B2 (ja) * | 2017-08-15 | 2021-04-21 | Ａｇｃ株式会社 | 反射型マスクブランク、および反射型マスク |
| US10553428B2 (en) | 2017-08-22 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reflection mode photomask and fabrication method therefore |
| SG11202011373SA (en) | 2018-05-25 | 2020-12-30 | Hoya Corp | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device |
| US10768534B2 (en) * | 2018-08-14 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography apparatus and method and method for handling wafer |
| JP7662511B2 (ja) * | 2019-03-28 | 2025-04-15 | Hoya株式会社 | マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| KR20220024004A (ko) * | 2019-06-27 | 2022-03-03 | 호야 가부시키가이샤 | 박막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| JP7350571B2 (ja) * | 2019-08-30 | 2023-09-26 | Hoya株式会社 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| JP7354005B2 (ja) * | 2020-02-12 | 2023-10-02 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| US11111176B1 (en) * | 2020-02-27 | 2021-09-07 | Applied Materials, Inc. | Methods and apparatus of processing transparent substrates |
| KR102567180B1 (ko) * | 2020-04-21 | 2023-08-16 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 |
| US20210333717A1 (en) * | 2020-04-23 | 2021-10-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask and method of manufacturing the same |
| KR102464780B1 (ko) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크 |
| JP7633832B2 (ja) | 2021-02-25 | 2025-02-20 | Hoya株式会社 | マスクブランク、反射型マスク、および半導体デバイスの製造方法 |
| JP7567742B2 (ja) | 2021-10-01 | 2024-10-16 | 信越化学工業株式会社 | 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法 |
| JP7669321B2 (ja) * | 2022-09-01 | 2025-04-28 | 信越化学工業株式会社 | 反射型マスクブランクおよび反射型マスクの製造方法 |
| KR20250076524A (ko) * | 2022-09-28 | 2025-05-29 | 호야 가부시키가이샤 | 도전막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| WO2025069822A1 (ja) * | 2023-09-29 | 2025-04-03 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
| WO2025115566A1 (ja) * | 2023-11-29 | 2025-06-05 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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| JPS526730Y2 (enrdf_load_stackoverflow) | 1972-10-30 | 1977-02-12 | ||
| JPS5228892Y2 (enrdf_load_stackoverflow) | 1972-12-04 | 1977-07-01 | ||
| JPS5082857U (enrdf_load_stackoverflow) | 1973-11-30 | 1975-07-16 | ||
| JPS5596951A (en) * | 1979-01-17 | 1980-07-23 | Mitsubishi Electric Corp | Negative for photomask |
| JP2001358055A (ja) * | 2000-06-15 | 2001-12-26 | Nikon Corp | 露光装置及びデバイス製造方法 |
| US20050238922A1 (en) * | 2003-12-25 | 2005-10-27 | Hoya Corporation | Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them |
| JP2005210093A (ja) * | 2003-12-25 | 2005-08-04 | Hoya Corp | 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法 |
| WO2007069417A1 (ja) | 2005-12-12 | 2007-06-21 | Asahi Glass Company, Limited | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板 |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| WO2008072706A1 (ja) | 2006-12-15 | 2008-06-19 | Asahi Glass Company, Limited | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板 |
| JP4372178B2 (ja) * | 2007-04-27 | 2009-11-25 | 株式会社東芝 | 光反射型マスクと光反射型マスクの作製方法及び半導体装置の製造方法 |
| WO2009116348A1 (ja) * | 2008-03-18 | 2009-09-24 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP4994405B2 (ja) | 2009-03-05 | 2012-08-08 | Ｈｏｙａ株式会社 | プレス成形型の離型膜の良否判定方法および光学素子の製造方法 |
| JP5515773B2 (ja) * | 2010-01-21 | 2014-06-11 | 大日本印刷株式会社 | 遮光枠を有する反射型マスクおよびその製造方法 |
| TWI399456B (zh) * | 2010-01-25 | 2013-06-21 | Sun Well Solar Corp | 導電膜製作設備及用於在其中處理基板之方法 |
| PH12013500757A1 (en) * | 2010-12-16 | 2013-06-03 | Resonac Corp | Photosensitive element, method for forming resist pattern, and method for producing printed circuit board |
| KR20130013515A (ko) * | 2011-07-28 | 2013-02-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| EP2581789B1 (en) | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| JP6157874B2 (ja) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法 |
| JP5575169B2 (ja) * | 2012-03-22 | 2014-08-20 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
| JP5993779B2 (ja) * | 2013-03-29 | 2016-09-14 | 富士フイルム株式会社 | 導電膜形成用組成物、導電膜、配線基板 |
| KR102109129B1 (ko) * | 2013-07-02 | 2020-05-08 | 삼성전자주식회사 | 반사형 포토마스크 블랭크 및 반사형 포토마스크 |
| JP6186996B2 (ja) * | 2013-07-30 | 2017-08-30 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| US9746762B2 (en) * | 2013-09-27 | 2017-08-29 | Hoya Corporation | Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| JP2015126127A (ja) * | 2013-12-26 | 2015-07-06 | キヤノン株式会社 | 保持装置、露光装置、および物品の製造方法 |
| JP6257428B2 (ja) * | 2014-04-15 | 2018-01-10 | 株式会社ジャパンディスプレイ | 電極基板、表示装置、入力装置および電極基板の製造方法 |
| KR102653351B1 (ko) | 2015-06-17 | 2024-04-02 | 호야 가부시키가이샤 | 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
-
2016
- 2016-06-08 KR KR1020177035098A patent/KR102653351B1/ko active Active
- 2016-06-08 US US15/580,331 patent/US10606166B2/en active Active
- 2016-06-08 WO PCT/JP2016/067134 patent/WO2016204051A1/ja not_active Application Discontinuation
- 2016-06-08 SG SG10201911400WA patent/SG10201911400WA/en unknown
- 2016-06-08 JP JP2017525171A patent/JP6815995B2/ja active Active
- 2016-06-08 SG SG11201710317RA patent/SG11201710317RA/en unknown
- 2016-06-08 KR KR1020247010348A patent/KR20240046293A/ko not_active Ceased
- 2016-06-16 TW TW105118976A patent/TWI708993B/zh active
- 2016-06-16 TW TW109134273A patent/TWI755085B/zh active
-
2020
- 2020-02-20 US US16/796,395 patent/US10996554B2/en active Active
- 2020-10-30 JP JP2020182324A patent/JP7296358B2/ja active Active
-
2022
- 2022-03-18 JP JP2022043344A patent/JP7296499B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016204051A1 (ja) | 2016-12-22 |
| JP2022069683A (ja) | 2022-05-11 |
| JP6815995B2 (ja) | 2021-01-20 |
| KR20240046293A (ko) | 2024-04-08 |
| US10606166B2 (en) | 2020-03-31 |
| JP2021015295A (ja) | 2021-02-12 |
| JPWO2016204051A1 (ja) | 2018-04-05 |
| US20200192213A1 (en) | 2020-06-18 |
| TWI755085B (zh) | 2022-02-11 |
| US10996554B2 (en) | 2021-05-04 |
| SG11201710317RA (en) | 2018-01-30 |
| JP7296358B2 (ja) | 2023-06-22 |
| TW202109173A (zh) | 2021-03-01 |
| TW201706709A (zh) | 2017-02-16 |
| US20180149962A1 (en) | 2018-05-31 |
| KR102653351B1 (ko) | 2024-04-02 |
| JP7296499B2 (ja) | 2023-06-22 |
| KR20180018526A (ko) | 2018-02-21 |
| TWI708993B (zh) | 2020-11-01 |
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