SG10201807360YA - Method of etching semiconductor structures with etch gases - Google Patents

Method of etching semiconductor structures with etch gases

Info

Publication number
SG10201807360YA
SG10201807360YA SG10201807360YA SG10201807360YA SG10201807360YA SG 10201807360Y A SG10201807360Y A SG 10201807360YA SG 10201807360Y A SG10201807360Y A SG 10201807360YA SG 10201807360Y A SG10201807360Y A SG 10201807360YA SG 10201807360Y A SG10201807360Y A SG 10201807360YA
Authority
SG
Singapore
Prior art keywords
plasma etching
semiconductor structures
etch gases
holes
etching semiconductor
Prior art date
Application number
SG10201807360YA
Other languages
English (en)
Inventor
Rahul Gupta
Venkateswara R Pallem
Vijay Surla
Curtis Anderson
Nathan Stafford
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of SG10201807360YA publication Critical patent/SG10201807360YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/02—Thiols having mercapto groups bound to acyclic carbon atoms
    • C07C321/04—Thiols having mercapto groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/01—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton
    • C07C323/02—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to acyclic carbon atoms of the carbon skeleton
    • C07C323/03—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG10201807360YA 2013-09-09 2014-09-09 Method of etching semiconductor structures with etch gases SG10201807360YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361875321P 2013-09-09 2013-09-09

Publications (1)

Publication Number Publication Date
SG10201807360YA true SG10201807360YA (en) 2018-09-27

Family

ID=52629027

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201807360YA SG10201807360YA (en) 2013-09-09 2014-09-09 Method of etching semiconductor structures with etch gases
SG11201601839RA SG11201601839RA (en) 2013-09-09 2014-09-09 Method of etching semiconductor structures with etch gases

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201601839RA SG11201601839RA (en) 2013-09-09 2014-09-09 Method of etching semiconductor structures with etch gases

Country Status (7)

Country Link
US (2) US9773679B2 (cg-RX-API-DMAC10.html)
JP (3) JP6423885B2 (cg-RX-API-DMAC10.html)
KR (3) KR102305297B1 (cg-RX-API-DMAC10.html)
CN (2) CN111261512B (cg-RX-API-DMAC10.html)
SG (2) SG10201807360YA (cg-RX-API-DMAC10.html)
TW (2) TWI612182B (cg-RX-API-DMAC10.html)
WO (1) WO2015035381A1 (cg-RX-API-DMAC10.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658509B (zh) 2014-06-18 2019-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
US9659788B2 (en) * 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
JP7062658B2 (ja) 2016-12-09 2022-05-06 エーエスエム アイピー ホールディング ビー．ブイ． 熱原子層エッチングプロセス
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US20170110336A1 (en) * 2016-12-31 2017-04-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges CLuadeq Methods for minimizing sidewall damage during low k etch processes
US9941123B1 (en) * 2017-04-10 2018-04-10 Lam Research Corporation Post etch treatment to prevent pattern collapse
US11075084B2 (en) * 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers
US10410878B2 (en) * 2017-10-31 2019-09-10 American Air Liquide, Inc. Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications
KR102504833B1 (ko) * 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
CN111566780B (zh) 2018-01-15 2023-12-01 应用材料公司 添加氩至远程等离子体氧化
CN118263107A (zh) * 2018-03-16 2024-06-28 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程
TWI804638B (zh) 2018-06-22 2023-06-11 日商關東電化工業股份有限公司 使用含硫原子之氣體分子之電漿蝕刻方法
TWI808274B (zh) * 2018-10-26 2023-07-11 日商關東電化工業股份有限公司 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法
TWI886105B (zh) 2018-10-26 2025-06-11 日商關東電化工業股份有限公司 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法
CN112368805B (zh) * 2018-12-18 2024-10-08 玛特森技术公司 使用含硫工艺气体的含碳硬掩模去除工艺
CN112119484B (zh) * 2019-04-19 2024-03-22 株式会社日立高新技术 等离子体处理方法
WO2020263718A1 (en) * 2019-06-24 2020-12-30 Lam Research Corporation Selective carbon deposition
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11384428B2 (en) * 2019-07-19 2022-07-12 Applied Materials, Inc. Carbon layer covered mask in 3D applications
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
JP2021106212A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
US11798811B2 (en) * 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures
US12106971B2 (en) * 2020-12-28 2024-10-01 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
KR102963872B1 (ko) 2021-02-26 2026-05-11 에스케이스페셜티 주식회사 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법
KR102981817B1 (ko) * 2021-03-08 2026-06-23 에스케이스페셜티 주식회사 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법
KR102927170B1 (ko) 2021-03-24 2026-02-11 삼성전자 주식회사 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법
JPWO2023234305A1 (cg-RX-API-DMAC10.html) * 2022-05-31 2023-12-07
KR20250016114A (ko) * 2022-05-31 2025-02-03 가부시끼가이샤 레조낙 에칭 방법
JP2025128420A (ja) * 2022-07-22 2025-09-03 住友精化株式会社 炭素原子含有膜のドライエッチング方法
US12498643B2 (en) * 2023-01-12 2025-12-16 Authentix, Inc. Fabrication of microscale structures
US12531211B2 (en) 2023-11-17 2026-01-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Sulfur-containing molecules for high aspect ratio plasma etching processes

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3109253B2 (ja) * 1992-06-29 2000-11-13 ソニー株式会社 ドライエッチング方法
JP3230284B2 (ja) 1992-07-21 2001-11-19 ソニー株式会社 位相シフト・マスクの製造方法
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
JP3282243B2 (ja) 1992-10-31 2002-05-13 ソニー株式会社 ドライエッチング方法
JP3297939B2 (ja) * 1992-11-17 2002-07-02 ソニー株式会社 ドライエッチング方法
JPH07211694A (ja) 1994-01-13 1995-08-11 Sony Corp ドライエッチング方法
JPH11111680A (ja) * 1997-09-30 1999-04-23 Yasuhiro Horiike エッチング方法
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
JP3555737B2 (ja) 1998-07-22 2004-08-18 セントラル硝子株式会社 クリーニングガス
JP3611723B2 (ja) 1998-07-22 2005-01-19 セントラル硝子株式会社 エッチングガス
KR100574923B1 (ko) 1999-07-21 2006-05-02 삼성전자주식회사 황 함유 탄화불소 가스를 사용하는 산화막의 건식 에칭 방법
US6540930B2 (en) * 2001-04-24 2003-04-01 3M Innovative Properties Company Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
JP3672900B2 (ja) * 2002-09-11 2005-07-20 松下電器産業株式会社 パターン形成方法
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
EP1761947B1 (en) * 2004-06-29 2015-02-25 Unaxis USA Inc. Method for reducing aspect ratio dependent etching in time division multiplexed etch processes
CN101048857B (zh) * 2004-10-27 2010-10-13 国际商业机器公司 用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复
US7645707B2 (en) 2005-03-30 2010-01-12 Lam Research Corporation Etch profile control
JPWO2007116515A1 (ja) * 2006-04-07 2009-08-20 株式会社フィルテック 半導体装置及びその製造方法、ドライエッチング方法、配線材料の作製方法、並びにエッチング装置
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
CN101625966A (zh) * 2008-07-11 2010-01-13 东京毅力科创株式会社 基板处理方法
KR101660488B1 (ko) 2010-01-22 2016-09-28 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
JP5862012B2 (ja) * 2010-02-01 2016-02-16 セントラル硝子株式会社 ドライエッチング剤及びドライエッチング方法
CN101800175B (zh) * 2010-02-11 2011-07-20 中微半导体设备(上海)有限公司 一种含硅绝缘层的等离子刻蚀方法
US9384992B2 (en) * 2012-02-09 2016-07-05 Tokyo Electron Limited Plasma processing method

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