SG10201705320PA - Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system - Google Patents

Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

Info

Publication number
SG10201705320PA
SG10201705320PA SG10201705320PA SG10201705320PA SG10201705320PA SG 10201705320P A SG10201705320P A SG 10201705320PA SG 10201705320P A SG10201705320P A SG 10201705320PA SG 10201705320P A SG10201705320P A SG 10201705320PA SG 10201705320P A SG10201705320P A SG 10201705320PA
Authority
SG
Singapore
Prior art keywords
showerheads
collar
conical
processing system
substrate processing
Prior art date
Application number
SG10201705320PA
Other languages
English (en)
Inventor
Phillips Richard
Blaquiere Ryan
Swaminathan Shankar
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201705320PA publication Critical patent/SG10201705320PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
SG10201705320PA 2016-07-11 2017-06-28 Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system SG10201705320PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/207,035 US10403474B2 (en) 2016-07-11 2016-07-11 Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

Publications (1)

Publication Number Publication Date
SG10201705320PA true SG10201705320PA (en) 2018-02-27

Family

ID=60911046

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201705320PA SG10201705320PA (en) 2016-07-11 2017-06-28 Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

Country Status (6)

Country Link
US (2) US10403474B2 (ko)
JP (2) JP7058953B2 (ko)
KR (2) KR102374558B1 (ko)
CN (2) CN107610996B (ko)
SG (1) SG10201705320PA (ko)
TW (1) TW201812081A (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
JP6430664B2 (ja) 2016-01-06 2018-11-28 東芝三菱電機産業システム株式会社 ガス供給装置
US10403474B2 (en) 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
KR102546317B1 (ko) * 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
US11004722B2 (en) * 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
KR102518372B1 (ko) * 2018-03-23 2023-04-06 삼성전자주식회사 가스 분배 장치, 이를 포함하는 기판 처리 장치 및 이를 이용하는 반도체 공정 방법
US12057300B2 (en) 2019-03-11 2024-08-06 Lam Research Corporation Apparatus for cleaning plasma chambers
WO2020242710A1 (en) 2019-05-29 2020-12-03 Lam Research Corporation Showerhead insert for uniformity tuning
KR20220035192A (ko) 2019-07-17 2022-03-21 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
TWM639577U (zh) * 2022-03-25 2023-04-11 美商蘭姆研究公司 用於改善沉積厚度均勻性的噴淋頭、噴淋頭組件及基板處理系統
WO2024076477A1 (en) * 2022-10-06 2024-04-11 Lam Research Corporation Showerhead for diffusion bonded, multi-zone gas dispersion
CN117059466A (zh) * 2023-10-13 2023-11-14 江苏邑文微电子科技有限公司 半导体沉积设备

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
CA2016970A1 (en) * 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
JPH08148439A (ja) * 1994-11-15 1996-06-07 Nissin Electric Co Ltd 薄膜気相成長装置
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
TW415970B (en) * 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
TW582050B (en) * 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
KR100722592B1 (ko) * 1999-12-22 2007-05-28 아익스트론 아게 화학 기상 증착 반응기
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
US7030335B2 (en) 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6299692B1 (en) * 2000-07-21 2001-10-09 Applied Materials, Inc. Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
US6302965B1 (en) * 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
TWI224815B (en) * 2001-08-01 2004-12-01 Tokyo Electron Ltd Gas processing apparatus and gas processing method
DE10153463A1 (de) * 2001-10-30 2003-05-15 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
JP3883918B2 (ja) * 2002-07-15 2007-02-21 日本エー・エス・エム株式会社 枚葉式ｃｖｄ装置及び枚葉式ｃｖｄ装置を用いた薄膜形成方法
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) * 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6830624B2 (en) * 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7622005B2 (en) * 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7572337B2 (en) * 2004-05-26 2009-08-11 Applied Materials, Inc. Blocker plate bypass to distribute gases in a chemical vapor deposition system
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
KR100854995B1 (ko) * 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US7722719B2 (en) 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
WO2007084493A2 (en) 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold
US8100081B1 (en) * 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
US20080141509A1 (en) 2006-12-19 2008-06-19 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
WO2009020524A1 (en) 2007-08-07 2009-02-12 Fsi International, Inc. Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses
JP2011500961A (ja) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
KR101432562B1 (ko) * 2007-12-31 2014-08-21 (주)소슬 기판 처리 장치 및 기판 처리 방법
KR101204614B1 (ko) 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
JP5544697B2 (ja) 2008-09-30 2014-07-09 東京エレクトロン株式会社 成膜装置
KR101028408B1 (ko) * 2008-12-29 2011-04-13 주식회사 케이씨텍 가스분사 유닛 및 이를 구비하는 원자층 증착장치
TWI539517B (zh) * 2010-02-12 2016-06-21 應用材料股份有限公司 使用於處理腔室之套件及使用用於氣流改良之套件之處理腔室
KR20120079962A (ko) * 2011-01-06 2012-07-16 주식회사 원익아이피에스 기판 처리 장치 및 그 동작 방법
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9021985B2 (en) * 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
JP2013225684A (ja) 2013-06-11 2013-10-31 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
TWI654333B (zh) * 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
TWI524388B (zh) 2013-12-27 2016-03-01 Hitachi Int Electric Inc A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
JP5764228B1 (ja) 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP5800964B1 (ja) * 2014-07-22 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US9617638B2 (en) * 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US9758868B1 (en) * 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US10403474B2 (en) 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

Also Published As

Publication number Publication date
CN113658844B (zh) 2024-05-28
JP2018011056A (ja) 2018-01-18
CN107610996B (zh) 2021-07-13
US20180012733A1 (en) 2018-01-11
US20190385817A1 (en) 2019-12-19
KR102535931B1 (ko) 2023-05-26
CN113658844A (zh) 2021-11-16
US10840061B2 (en) 2020-11-17
KR20220034099A (ko) 2022-03-17
KR102374558B1 (ko) 2022-03-14
KR20180006845A (ko) 2018-01-19
JP7058953B2 (ja) 2022-04-25
TW201812081A (zh) 2018-04-01
CN107610996A (zh) 2018-01-19
US10403474B2 (en) 2019-09-03
JP2022095877A (ja) 2022-06-28
JP7395644B2 (ja) 2023-12-11

Similar Documents

Publication Publication Date Title
SG10201705320PA (en) Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
ZA202004713B (en) Automated cell processing systems and methods
EP3913067C0 (en) METHOD AND SYSTEMS FOR PROCESSING POLYNUCLEOTIDES
ZA201703417B (en) Systems, methods, and devices for intelligent speech recognition and processing
EP3391406A4 (en) METHOD AND DEVICE FOR PROCESSING A SUBSTRATE
PL3563235T3 (pl) Systemy, sposoby i aparaty do obliczania heterogenicznego
EP3461016A4 (en) SYSTEM ON CHIP AND PROCESSING DEVICE
HK1246872A1 (zh) 基板處理系統及基板處理方法、以及器件製造方法
EP3249862A4 (en) Flow table processing method and device
ZA201603670B (en) Method and system for processing secure offline transactions
SG11201706269QA (en) Methods and systems for order processing
ZA201800573B (en) Nozzle device and system for sorting objects
HK1258531A1 (zh) 使用糞源細菌群落來治療微生態失衡的系統和方法
SG11201607004QA (en) Substrate processing system and substrate processing method
SG11201710329TA (en) Substrate processing system and substrate processing method
EP3282475A4 (en) Substrate holding method, substrate holding device, processing method and processing device
EP3324586A4 (en) Method and device for processing flow table
SG10201509883TA (en) Method, apparatus, and application system for real-time processing the data streams
GB201415091D0 (en) Method and system for processing a fuel transaction
AU2017308229B2 (en) Systems and methods for treating a metal substrate
GB2561952B (en) A method for processing an inferior gasoline and a system for processing the same
ZA201604278B (en) System,method and device for processing a transaction
EP3208971A4 (en) Method, device and system for reducing centralized protection switching time in potn system
EP3466604A4 (en) Image Processing Device, Workpiece Transfer Device, and Image Processing Method
GB2548965B (en) Gripping apparatus and associated systems