SG10201608558XA - Substrate holding device, substrate polishing apparatus, and method of manufacturing the substrate holding device - Google Patents

Substrate holding device, substrate polishing apparatus, and method of manufacturing the substrate holding device

Info

Publication number
SG10201608558XA
SG10201608558XA SG10201608558XA SG10201608558XA SG10201608558XA SG 10201608558X A SG10201608558X A SG 10201608558XA SG 10201608558X A SG10201608558X A SG 10201608558XA SG 10201608558X A SG10201608558X A SG 10201608558XA SG 10201608558X A SG10201608558X A SG 10201608558XA
Authority
SG
Singapore
Prior art keywords
holding device
substrate holding
substrate
manufacturing
polishing apparatus
Prior art date
Application number
SG10201608558XA
Other languages
English (en)
Inventor
Shingo Togashi
Hozumi Yasuda
Makoto Fukushima
Osamu Nabeya
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG10201608558XA publication Critical patent/SG10201608558XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
SG10201608558XA 2015-10-14 2016-10-13 Substrate holding device, substrate polishing apparatus, and method of manufacturing the substrate holding device SG10201608558XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015203262A JP6392193B2 (ja) 2015-10-14 2015-10-14 基板保持装置および基板研磨装置ならびに基板保持装置の製造方法

Publications (1)

Publication Number Publication Date
SG10201608558XA true SG10201608558XA (en) 2017-05-30

Family

ID=58522762

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201608558XA SG10201608558XA (en) 2015-10-14 2016-10-13 Substrate holding device, substrate polishing apparatus, and method of manufacturing the substrate holding device

Country Status (4)

Country Link
US (2) US10486284B2 (ko)
JP (1) JP6392193B2 (ko)
KR (1) KR102540543B1 (ko)
SG (1) SG10201608558XA (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10160091B2 (en) 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. CMP polishing head design for improving removal rate uniformity
JP7219009B2 (ja) * 2018-03-27 2023-02-07 株式会社荏原製作所 基板保持装置およびドライブリングの製造方法
CN114952610B (zh) * 2021-11-10 2024-02-09 华海清科股份有限公司 一种用于化学机械抛光的承载头和抛光设备
CN115106932B (zh) * 2021-11-10 2024-03-05 华海清科股份有限公司 一种化学机械抛光头和抛光设备
CN117533788B (zh) * 2023-11-10 2024-04-19 珠海诚锋电子科技有限公司 一种自动上下料的圆晶检测设备及其使用方法

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US5643061A (en) * 1995-07-20 1997-07-01 Integrated Process Equipment Corporation Pneumatic polishing head for CMP apparatus
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6116992A (en) * 1997-12-30 2000-09-12 Applied Materials, Inc. Substrate retaining ring
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6224472B1 (en) * 1999-06-24 2001-05-01 Samsung Austin Semiconductor, L.P. Retaining ring for chemical mechanical polishing
JP2001121411A (ja) * 1999-10-29 2001-05-08 Applied Materials Inc ウェハー研磨装置
US6517422B2 (en) * 2000-03-07 2003-02-11 Toshiba Ceramics Co., Ltd. Polishing apparatus and method thereof
JP3816297B2 (ja) * 2000-04-25 2006-08-30 株式会社荏原製作所 研磨装置
KR100335569B1 (ko) * 2000-05-18 2002-05-08 윤종용 화학적 기계적 연마장치의 연마헤드
US6354927B1 (en) * 2000-05-23 2002-03-12 Speedfam-Ipec Corporation Micro-adjustable wafer retaining apparatus
US6709322B2 (en) * 2001-03-29 2004-03-23 Lam Research Corporation Apparatus for aligning a surface of an active retainer ring with a wafer surface for chemical mechanical polishing
US6758939B2 (en) * 2001-08-31 2004-07-06 Speedfam-Ipec Corporation Laminated wear ring
DE10247180A1 (de) * 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung
DE10247179A1 (de) * 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung
US6796887B2 (en) * 2002-11-13 2004-09-28 Speedfam-Ipec Corporation Wear ring assembly
JP2005011999A (ja) * 2003-06-19 2005-01-13 Tokyo Seimitsu Co Ltd ワーク保持ヘッド及び該ワーク保持ヘッドを有する研磨装置
EP1694464B1 (en) * 2003-11-13 2010-05-26 Applied Materials, Inc. Retaining ring with shaped surface
US7029386B2 (en) * 2004-06-10 2006-04-18 R & B Plastics, Inc. Retaining ring assembly for use in chemical mechanical polishing
WO2006114854A1 (ja) * 2005-04-12 2006-11-02 Nippon Seimitsu Denshi Co., Ltd. Ｃｍｐ装置用リテーナリングとその製造方法、および、ｃｍｐ装置
JP2007027166A (ja) * 2005-07-12 2007-02-01 Renesas Technology Corp 半導体装置の製造方法および半導体製造装置
JP2007296603A (ja) * 2006-04-28 2007-11-15 Ebara Corp リテーナリング加工装置
JP2008062355A (ja) * 2006-09-08 2008-03-21 Fujitsu Ltd 研磨装置及び電子装置の製造方法
US7699688B2 (en) * 2006-11-22 2010-04-20 Applied Materials, Inc. Carrier ring for carrier head
KR100797311B1 (ko) * 2007-02-14 2008-01-23 동부일렉트로닉스 주식회사 화학적기계적 연마장치의 폴리싱 헤드
JP2008229790A (ja) * 2007-03-22 2008-10-02 Nec Electronics Corp リテーナリングおよび研磨装置
US8033895B2 (en) * 2007-07-19 2011-10-11 Applied Materials, Inc. Retaining ring with shaped profile
US7749052B2 (en) * 2008-09-08 2010-07-06 Applied Materials, Inc. Carrier head using flexure restraints for retaining ring alignment
KR101100719B1 (ko) * 2009-06-22 2011-12-30 주식회사 윌비에스엔티 화학적기계 연마장치의 다중 리테이너 링 구조물
EP3406402B1 (en) * 2010-08-06 2021-06-30 Applied Materials, Inc. Substrate edge tuning with retaining ring
US20130035022A1 (en) * 2011-08-05 2013-02-07 Paik Young J Two-Part Plastic Retaining Ring
JP5922965B2 (ja) * 2012-03-29 2016-05-24 株式会社荏原製作所 基板保持装置、研磨装置、および研磨方法
KR101475811B1 (ko) * 2013-09-03 2014-12-23 유승열 화학기계적 연마장치용 리테이너 링 및 제조방법
JP6403981B2 (ja) * 2013-11-13 2018-10-10 株式会社荏原製作所 基板保持装置、研磨装置、研磨方法、およびリテーナリング
KR101529433B1 (ko) * 2014-06-27 2015-06-18 유승열 화학기계적 연마장치용 리테이너 링 및 제조방법
JP6403015B2 (ja) * 2015-07-21 2018-10-10 東芝メモリ株式会社 研磨装置および半導体製造方法

Also Published As

Publication number Publication date
JP2017074639A (ja) 2017-04-20
US20200047308A1 (en) 2020-02-13
KR20170044045A (ko) 2017-04-24
US11478895B2 (en) 2022-10-25
KR102540543B1 (ko) 2023-06-05
US20170106497A1 (en) 2017-04-20
US10486284B2 (en) 2019-11-26
JP6392193B2 (ja) 2018-09-19

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