SG10201604178RA - Die bonding apparatus comprising an inert gas environment - Google Patents
Die bonding apparatus comprising an inert gas environmentInfo
- Publication number
- SG10201604178RA SG10201604178RA SG10201604178RA SG10201604178RA SG10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA
- Authority
- SG
- Singapore
- Prior art keywords
- inert gas
- bonding apparatus
- die bonding
- gas environment
- environment
- Prior art date
Links
- 239000011261 inert gas Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L2224/75301—Bonding head
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- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
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- H01L2224/81011—Chemical cleaning, e.g. etching, flux
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- H01L2224/81053—Bonding environment
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- H01L2224/81075—Composition of the atmosphere being inert
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- H01L2224/81053—Bonding environment
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- H01L2224/81093—Transient conditions, e.g. gas-flow
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- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Robotics (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562166251P | 2015-05-26 | 2015-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201604178RA true SG10201604178RA (en) | 2016-12-29 |
Family
ID=56097975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201604178RA SG10201604178RA (en) | 2015-05-26 | 2016-05-25 | Die bonding apparatus comprising an inert gas environment |
Country Status (7)
Country | Link |
---|---|
US (1) | US10475763B2 (ko) |
EP (1) | EP3098837B1 (ko) |
JP (1) | JP6270912B2 (ko) |
KR (1) | KR101847371B1 (ko) |
CN (1) | CN106206365B (ko) |
SG (1) | SG10201604178RA (ko) |
TW (1) | TWI627697B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10475763B2 (en) | 2015-05-26 | 2019-11-12 | Asm Technology Singapore Pte Ltd | Die bonding apparatus comprising an inert gas environment |
WO2017077982A1 (ja) * | 2015-11-05 | 2017-05-11 | 古河電気工業株式会社 | ダイボンディング装置およびダイボンディング方法 |
US10903153B2 (en) | 2018-11-18 | 2021-01-26 | International Business Machines Corporation | Thinned die stack |
WO2022126018A1 (en) * | 2020-12-11 | 2022-06-16 | Mrsi Systems Llc | Inert gas chamber |
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JPS6170729A (ja) | 1984-09-14 | 1986-04-11 | Matsushita Electronics Corp | 半導体基板接着装置 |
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US4899920A (en) * | 1988-02-22 | 1990-02-13 | Pace Incorporated | Apparatus for removal and installing electronic components with respect to a substrate |
US5205461A (en) * | 1988-07-29 | 1993-04-27 | International Business Machines Corporation | Method and apparatus for fluxless solder bonding |
US4984731A (en) * | 1989-10-05 | 1991-01-15 | Matsushita Electric Industrial Co., Ltd. | Method of packaging electronic component parts using a eutectic die bonder |
US5232144A (en) * | 1992-06-26 | 1993-08-03 | Motorola, Inc. | Apparatus for tape automated bonding |
JP3206142B2 (ja) * | 1992-10-15 | 2001-09-04 | 松下電器産業株式会社 | ワイヤボンディング装置及びワイヤボンディング方法 |
JP3248778B2 (ja) * | 1993-05-21 | 2002-01-21 | ローム株式会社 | 半田ワイヤーにボール部を形成する方法 |
JP3295529B2 (ja) * | 1994-05-06 | 2002-06-24 | 松下電器産業株式会社 | Ic部品実装方法及び装置 |
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JP3005502B2 (ja) * | 1997-07-22 | 2000-01-31 | 山形日本電気株式会社 | ダイボンディング装置 |
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JP2011108990A (ja) * | 2009-11-20 | 2011-06-02 | Shibuya Kogyo Co Ltd | ボンディング装置 |
TW201230164A (en) * | 2011-01-10 | 2012-07-16 | Burlan Corp | Chip unloading and arranging machine |
US20130153645A1 (en) * | 2011-11-17 | 2013-06-20 | Princeton Lightwave, Inc. | Process for Hybrid Integration of Focal Plane Arrays |
US8967452B2 (en) * | 2012-04-17 | 2015-03-03 | Asm Technology Singapore Pte Ltd | Thermal compression bonding of semiconductor chips |
US10475763B2 (en) | 2015-05-26 | 2019-11-12 | Asm Technology Singapore Pte Ltd | Die bonding apparatus comprising an inert gas environment |
US20170016954A1 (en) * | 2015-06-10 | 2017-01-19 | Translarity, Inc. | Systems and methods for generating and preserving vacuum between semiconductor wafer and wafer translator |
-
2016
- 2016-05-20 US US15/160,814 patent/US10475763B2/en active Active
- 2016-05-20 CN CN201610341324.0A patent/CN106206365B/zh active Active
- 2016-05-23 TW TW105115900A patent/TWI627697B/zh active
- 2016-05-24 EP EP16001177.1A patent/EP3098837B1/en active Active
- 2016-05-25 JP JP2016104035A patent/JP6270912B2/ja active Active
- 2016-05-25 SG SG10201604178RA patent/SG10201604178RA/en unknown
- 2016-05-25 KR KR1020160064052A patent/KR101847371B1/ko active IP Right Grant
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EP3098837A2 (en) | 2016-11-30 |
TWI627697B (zh) | 2018-06-21 |
EP3098837A3 (en) | 2017-02-08 |
KR101847371B1 (ko) | 2018-04-10 |
EP3098837B1 (en) | 2021-09-29 |
JP6270912B2 (ja) | 2018-01-31 |
JP2016225622A (ja) | 2016-12-28 |
CN106206365A (zh) | 2016-12-07 |
US10475763B2 (en) | 2019-11-12 |
KR20160138916A (ko) | 2016-12-06 |
CN106206365B (zh) | 2019-04-30 |
US20160351527A1 (en) | 2016-12-01 |
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