SG10201604178RA - Die bonding apparatus comprising an inert gas environment - Google Patents

Die bonding apparatus comprising an inert gas environment

Info

Publication number
SG10201604178RA
SG10201604178RA SG10201604178RA SG10201604178RA SG10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA SG 10201604178R A SG10201604178R A SG 10201604178RA
Authority
SG
Singapore
Prior art keywords
inert gas
bonding apparatus
die bonding
gas environment
environment
Prior art date
Application number
SG10201604178RA
Other languages
English (en)
Inventor
Siu Wing Lau
Kin Yik Hung
Yuk Cheung Au
Man Leo Lee
Sai Yuen Go
Wing Chiu Lai
Original Assignee
Asm Tech Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Tech Singapore Pte Ltd filed Critical Asm Tech Singapore Pte Ltd
Publication of SG10201604178RA publication Critical patent/SG10201604178RA/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54Providing fillings in containers, e.g. gas fillings
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    • H01L2224/81053Bonding environment
    • H01L2224/81054Composition of the atmosphere
    • H01L2224/81075Composition of the atmosphere being inert
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    • H01L2224/81053Bonding environment
    • H01L2224/81091Under pressure
    • H01L2224/81093Transient conditions, e.g. gas-flow
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    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
SG10201604178RA 2015-05-26 2016-05-25 Die bonding apparatus comprising an inert gas environment SG10201604178RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562166251P 2015-05-26 2015-05-26

Publications (1)

Publication Number Publication Date
SG10201604178RA true SG10201604178RA (en) 2016-12-29

Family

ID=56097975

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201604178RA SG10201604178RA (en) 2015-05-26 2016-05-25 Die bonding apparatus comprising an inert gas environment

Country Status (7)

Country Link
US (1) US10475763B2 (ko)
EP (1) EP3098837B1 (ko)
JP (1) JP6270912B2 (ko)
KR (1) KR101847371B1 (ko)
CN (1) CN106206365B (ko)
SG (1) SG10201604178RA (ko)
TW (1) TWI627697B (ko)

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US10475763B2 (en) 2015-05-26 2019-11-12 Asm Technology Singapore Pte Ltd Die bonding apparatus comprising an inert gas environment
WO2017077982A1 (ja) * 2015-11-05 2017-05-11 古河電気工業株式会社 ダイボンディング装置およびダイボンディング方法
US10903153B2 (en) 2018-11-18 2021-01-26 International Business Machines Corporation Thinned die stack
WO2022126018A1 (en) * 2020-12-11 2022-06-16 Mrsi Systems Llc Inert gas chamber

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TW201709389A (zh) 2017-03-01
EP3098837A2 (en) 2016-11-30
TWI627697B (zh) 2018-06-21
EP3098837A3 (en) 2017-02-08
KR101847371B1 (ko) 2018-04-10
EP3098837B1 (en) 2021-09-29
JP6270912B2 (ja) 2018-01-31
JP2016225622A (ja) 2016-12-28
CN106206365A (zh) 2016-12-07
US10475763B2 (en) 2019-11-12
KR20160138916A (ko) 2016-12-06
CN106206365B (zh) 2019-04-30
US20160351527A1 (en) 2016-12-01

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