SG10201406528PA - Ion implantation system and method - Google Patents

Ion implantation system and method

Info

Publication number
SG10201406528PA
SG10201406528PA SG10201406528PA SG10201406528PA SG10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA
Authority
SG
Singapore
Prior art keywords
ion implantation
implantation system
dopant gas
arc chamber
optimization
Prior art date
Application number
SG10201406528PA
Other languages
English (en)
Inventor
Edward E Jones
Sharad N Yedave
Ying Tang
Barry Lewis Chambers
Robert Kaim
Joseph D Sweeney
Oleg Byl
Peng Zou
Original Assignee
Advanced Tech Materials
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, Entegris Inc filed Critical Advanced Tech Materials
Publication of SG10201406528PA publication Critical patent/SG10201406528PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG10201406528PA 2009-10-27 2010-10-25 Ion implantation system and method SG10201406528PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25509709P 2009-10-27 2009-10-27
US34920210P 2010-05-27 2010-05-27
US35851410P 2010-06-25 2010-06-25

Publications (1)

Publication Number Publication Date
SG10201406528PA true SG10201406528PA (en) 2014-12-30

Family

ID=43970653

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201605310RA SG10201605310RA (en) 2009-10-27 2010-10-25 Ion implantation system and method
SG10201406528PA SG10201406528PA (en) 2009-10-27 2010-10-25 Ion implantation system and method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201605310RA SG10201605310RA (en) 2009-10-27 2010-10-25 Ion implantation system and method

Country Status (8)

Country Link
US (3) US8796131B2 (fr)
EP (2) EP3062330A3 (fr)
JP (1) JP5919195B2 (fr)
KR (1) KR101747473B1 (fr)
CN (2) CN105702547B (fr)
SG (2) SG10201605310RA (fr)
TW (2) TWI584336B (fr)
WO (1) WO2011056515A2 (fr)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG165321A1 (en) * 2005-08-30 2010-10-28 Advanced Tech Materials Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US9166139B2 (en) * 2009-05-14 2015-10-20 The Neothermal Energy Company Method for thermally cycling an object including a polarizable material
US8796131B2 (en) * 2009-10-27 2014-08-05 Advanced Technology Materials, Inc. Ion implantation system and method
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI689467B (zh) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US9205392B2 (en) 2010-08-30 2015-12-08 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
US9805912B2 (en) * 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
RU2522662C2 (ru) * 2011-08-03 2014-07-20 Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора
TWI583442B (zh) * 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
US8779395B2 (en) * 2011-12-01 2014-07-15 Axcelis Technologies, Inc. Automatic control system for selection and optimization of co-gas flow levels
WO2013122986A1 (fr) 2012-02-14 2013-08-22 Advanced Technology Materials, Inc. Gaz de dopage de carbone et co-écoulement pour un faisceau d'implant et amélioration des performances de vie de la source
US9499921B2 (en) * 2012-07-30 2016-11-22 Rayton Solar Inc. Float zone silicon wafer manufacturing system and related process
CN103785647A (zh) * 2012-10-26 2014-05-14 上海华虹宏力半导体制造有限公司 离子注入设备自动清洁离子腔体以提高部件寿命的方法
US8796649B2 (en) * 2012-11-29 2014-08-05 Ion Technology Solutions, Llc Ion implanter
TWI610330B (zh) * 2012-12-14 2018-01-01 艾克塞利斯科技公司 針對共同氣體流層級的選擇和最佳化的自動控制系統
SG11201504167RA (en) * 2012-12-21 2015-07-30 Praxair Technology Inc Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation
US9831063B2 (en) 2013-03-05 2017-11-28 Entegris, Inc. Ion implantation compositions, systems, and methods
US9524849B2 (en) * 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
JP2016534560A (ja) * 2013-08-16 2016-11-04 インテグリス・インコーポレーテッド 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供
JP6490917B2 (ja) * 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
US9275820B2 (en) * 2013-08-27 2016-03-01 Varian Semiconductor Equipment Associates, Inc. Gas coupled arc chamber cooling
US9520204B2 (en) * 2013-12-26 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Cold stripper for high energy ion implanter with tandem accelerator
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US10039157B2 (en) * 2014-06-02 2018-07-31 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma source
CN107078009B (zh) * 2014-09-01 2019-04-12 恩特格里斯公司 利用增强源技术进行磷或砷离子植入
CN110010433A (zh) * 2014-10-27 2019-07-12 恩特格里斯公司 离子植入工艺及设备
US20160217970A1 (en) * 2015-01-28 2016-07-28 Advanced Ion Beam Technology, Inc. Ion implanter and method for ion implantation
US9734991B2 (en) * 2015-07-28 2017-08-15 Varian Semiconductor Equipment Associates, Inc. Negative ribbon ion beams from pulsed plasmas
US9620376B2 (en) * 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
US9859098B2 (en) * 2015-12-22 2018-01-02 Varian Semiconductor Equipment Associates, Inc. Temperature controlled ion source
CN108369886B (zh) * 2015-12-27 2020-08-14 恩特格里斯公司 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能
TWI550678B (zh) * 2016-05-11 2016-09-21 粘俊能 離子源及其熱電子產生方法
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
TWI592972B (zh) * 2016-07-18 2017-07-21 粘俊能 具雙熱電子源之離子源及其熱電子產生方法
JP6380483B2 (ja) 2016-08-10 2018-08-29 トヨタ自動車株式会社 成膜装置
US10410844B2 (en) 2016-12-09 2019-09-10 Varian Semiconductor Equipment Associates, Inc. RF clean system for electrostatic elements
US10431427B2 (en) 2017-05-26 2019-10-01 Applied Materials, Inc. Monopole antenna array source with phase shifted zones for semiconductor process equipment
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10541122B2 (en) * 2017-06-13 2020-01-21 Mks Instruments, Inc. Robust ion source
US10892136B2 (en) * 2018-08-13 2021-01-12 Varian Semiconductor Equipment Associates, Inc. Ion source thermal gas bushing
US11404254B2 (en) * 2018-09-19 2022-08-02 Varian Semiconductor Equipment Associates, Inc. Insertable target holder for solid dopant materials
US11295926B2 (en) * 2018-11-28 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Repellent electrode for electron repelling
TWI733275B (zh) * 2018-12-15 2021-07-11 美商恩特葛瑞斯股份有限公司 氟離子植入方法及系統
TWI725384B (zh) * 2019-02-22 2021-04-21 力晶積成電子製造股份有限公司 半導體離子植入機的離子源頭結構
EP4000086A4 (fr) 2019-07-18 2023-07-19 Entegris, Inc. Système d'implantation ionique avec mélange de matériaux de tube à arc
CN114600222A (zh) * 2019-09-20 2022-06-07 恩特格里斯公司 用于离子植入的等离子体浸渍方法
CN116325070A (zh) 2020-10-02 2023-06-23 恩特格里斯公司 用于产生铝离子的方法及系统
US20240043988A1 (en) * 2022-08-05 2024-02-08 Entegris, Inc. Gas mixture as co-gas for ion implant

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399050A (en) * 1973-08-21 1975-06-25 Standard Telephones Cables Ltd Graphite tube furnace
JPS58197775A (ja) 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
JPS6295820A (ja) 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP2533639B2 (ja) * 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
US4987933A (en) 1989-03-03 1991-01-29 Eaton Corporation Fluid flow control method and apparatus for minimizing particle contamination
JPH03165443A (ja) 1989-11-24 1991-07-17 Shimadzu Corp イオン注入方法
US5262652A (en) * 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
JP3250573B2 (ja) 1992-12-28 2002-01-28 キヤノン株式会社 光起電力素子及びその製造方法、並びに発電システム
JPH0765761A (ja) 1993-08-30 1995-03-10 Hitachi Ltd 薄膜形成方法およびイオン注入方法
US5443732A (en) 1994-04-01 1995-08-22 Westinghouse Electric Corporation Boron isotope separation using continuous ion exchange chromatography
JP3502185B2 (ja) 1995-04-12 2004-03-02 松下電器産業株式会社 イオン注入方法
US5977552A (en) * 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
US7118996B1 (en) * 1996-05-15 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
US6242080B1 (en) * 1997-07-09 2001-06-05 Canon Kabushiki Kaisha Zinc oxide thin film and process for producing the film
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
TW521295B (en) * 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
EP1303866B1 (fr) 2000-07-10 2009-12-09 TEL Epion Inc. Systeme et procede d'amelioration des couches minces au moyen d'un traitement par faisceau d'ions d'amas gazeux
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6670623B2 (en) * 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
JP3824058B2 (ja) 2001-05-23 2006-09-20 独立行政法人産業技術総合研究所 カルボランスーパークラスターおよびその製造方法
US7518124B2 (en) * 2002-03-28 2009-04-14 Applied Materials, Inc. Monatomic dopant ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
EP1579481B1 (fr) 2002-06-26 2013-12-04 Semequip, Inc. Procede de fabrication de semi-conducteurs par implantation d'agregats d'ions d'hydrure de bore
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
US6936505B2 (en) 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
EP1648595B1 (fr) * 2003-06-06 2016-05-04 Ionwerks Implantation ou depot d'or dans des echantillons biologiques destines au profilage tridimensionnel en epaisseur de tissus par desorption laser
JP4643588B2 (ja) 2003-12-12 2011-03-02 セメクイップ， インコーポレイテッド 固体から昇華した蒸気の流れの制御
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7015108B2 (en) 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
US7397048B2 (en) * 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7819981B2 (en) 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
EP1881535B1 (fr) * 2005-05-02 2016-06-01 Nichia Corporation Element semiconducteur a base de nitrure et son procede de fabrication
SG165321A1 (en) 2005-08-30 2010-10-28 Advanced Tech Materials Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
EP2469584A1 (fr) 2005-12-09 2012-06-27 Semequip, Inc. Procédé d'implantation d'ions
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US8013312B2 (en) 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
US7732309B2 (en) 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US20080164427A1 (en) 2007-01-09 2008-07-10 Applied Materials, Inc. Ion implanters
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
KR20090127366A (ko) * 2007-03-30 2009-12-10 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 디바이스용 극저 접합 형성 방법
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US20090087970A1 (en) * 2007-09-27 2009-04-02 Applied Materials, Inc. Method of producing a dopant gas species
US7794798B2 (en) 2007-09-29 2010-09-14 Tel Epion Inc. Method for depositing films using gas cluster ion beam processing
CN103922359A (zh) 2007-11-02 2014-07-16 塞门库普公司 簇硼的制造方法
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US9627180B2 (en) 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US8237136B2 (en) 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8796131B2 (en) * 2009-10-27 2014-08-05 Advanced Technology Materials, Inc. Ion implantation system and method
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
JP5714831B2 (ja) 2010-03-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI496183B (zh) 2015-08-11
TW201137925A (en) 2011-11-01
CN105702547A (zh) 2016-06-22
US20150357152A1 (en) 2015-12-10
US20120252195A1 (en) 2012-10-04
JP2013509004A (ja) 2013-03-07
TW201604915A (zh) 2016-02-01
CN102668016B (zh) 2016-02-24
EP3062330A2 (fr) 2016-08-31
US8796131B2 (en) 2014-08-05
SG10201605310RA (en) 2016-08-30
JP5919195B2 (ja) 2016-05-18
EP2494581A4 (fr) 2015-03-18
EP2494581B1 (fr) 2016-05-18
TWI584336B (zh) 2017-05-21
KR20120106947A (ko) 2012-09-27
WO2011056515A2 (fr) 2011-05-12
KR101747473B1 (ko) 2017-06-27
CN102668016A (zh) 2012-09-12
US9111860B2 (en) 2015-08-18
EP2494581A2 (fr) 2012-09-05
US20140342538A1 (en) 2014-11-20
EP3062330A3 (fr) 2016-11-16
WO2011056515A3 (fr) 2011-08-25
CN105702547B (zh) 2021-10-29

Similar Documents

Publication Publication Date Title
SG10201406528PA (en) Ion implantation system and method
GB2467457A (en) Energy tranfer machine and method
ATE552363T1 (de) Elektrolyse
AR089097A1 (es) Metodos y sistema para formar nanotubos de carbono
AR052389A1 (es) Un metodo y un aparato para hacer entrar en combustion a un combustible.
CO6531409A2 (es) Proceso y aparatos para el retiro de compuestos orgánicos volátiles de una corriente de gas
NZ710997A (en) Gasified-gas generation system
PE20091535A1 (es) Metodo e instalacion para tratar gases de salida desde un horno de fundicion en suspension
AR082348A1 (es) Calentador subsuperficial
RU2015111724A (ru) Способ утилизации энергии геотермальных вод
FR2973483B1 (fr) Systeme solaire permettant de reproduire l'effet d'une flamme de combustion
UA93753C2 (ru) Способ выработки смешанного пара
WO2010124887A3 (fr) Procédé pour soumettre un composant à une énergie thermique
Kato et al. Inverse Bremsstrahlung in Weakly Ionized Underdense Plasmas
Kramer et al. Nanoparticle heating in atmospheric pressure plasmas
Crenshaw et al. Study of Thermodynamics of Relativistic ion-electron Plasma
SG146493A1 (en) System for recovering heat and uses thereof
Benilova et al. Analyzing spotless mode of current transfer to cathodes of Cr, Gd, and Pb vapour arcs
Nagatomo et al. Computational Study of Hydrodynamic Instability under the Strong Magnetic Field
Fantz Large and powerful rf-driven hydrogen plasmas: negative ions for the heating systems of ITER
CN102815693A (zh) 密封石墨提纯炉
Goulding et al. Production of H, D, and He Plasmas in the ORNL High Flux Helicon Plasma Source
Mitsuhashi et al. A Simulation of Gas Temperature Distribution inside and outside near a Microcell Plasma in Ar
Dulieu et al. Proposal for laser cooling of rare-earth ions
Salehi et al. Generation of thin, near critical density gas targets for laser plasma interaction experiments