JP5919195B2 - イオン注入システムおよび方法 - Google Patents
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- 238000005468 ion implantation Methods 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 53
- 239000007789 gas Substances 0.000 claims description 313
- 239000002019 doping agent Substances 0.000 claims description 220
- 150000002500 ions Chemical class 0.000 claims description 195
- 238000001816 cooling Methods 0.000 claims description 77
- 239000000463 material Substances 0.000 claims description 75
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 58
- 229910052796 boron Inorganic materials 0.000 claims description 57
- 230000008021 deposition Effects 0.000 claims description 47
- 238000004140 cleaning Methods 0.000 claims description 43
- 239000002826 coolant Substances 0.000 claims description 24
- WUWOPJNIAKTBSJ-UHFFFAOYSA-N diboron tetrafluoride Chemical compound FB(F)B(F)F WUWOPJNIAKTBSJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000000354 decomposition reaction Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000003085 diluting agent Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000010790 dilution Methods 0.000 claims description 10
- 239000012895 dilution Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 7
- 239000011538 cleaning material Substances 0.000 claims description 6
- 150000001639 boron compounds Chemical class 0.000 claims description 5
- 239000000110 cooling liquid Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000006731 degradation reaction Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- WQYBZZAQKQNECR-UHFFFAOYSA-J [B+3].[B+3].[F-].[F-].[F-].[F-] Chemical compound [B+3].[B+3].[F-].[F-].[F-].[F-] WQYBZZAQKQNECR-UHFFFAOYSA-J 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 45
- 238000000605 extraction Methods 0.000 description 23
- 239000007787 solid Substances 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 17
- 241000894007 species Species 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 238000002513 implantation Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 13
- 238000010884 ion-beam technique Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- 239000000498 cooling water Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
- 230000008054 signal transmission Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910015900 BF3 Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- -1 For example Chemical compound 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 150000001793 charged compounds Chemical class 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002594 sorbent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Description
ドーパントガス源と、
ドーパントガス源からアークチャンバにドーパントガスを導入するドーパントガス供給ラインと、
ドーパントガス供給ラインに関連付けられた冷却構造であって、ドーパントガス供給ライン内のドーパントガスを冷却して、それによってアークチャンバの動作中に生成された熱によるドーパントガスの加熱および該熱から生じるドーパントガスの分解を抑制する冷却構造と、を備えるイオン注入システムに関する。
アークチャンバを有し、当該アークチャンバ内のガスをイオン化するイオン源と、
ドーパントガス源と、
ドーパントガス源からアークチャンバにドーパントガスを導入するためのドーパントガス供給ラインと、
ドーパントガス供給ラインに関連付けられた冷却構造であって、ドーパントガス供給ライン内のドーパントガスを冷却し、それによってアークチャンバの動作中に生成された熱によるドーパントガスの加熱および該熱から生じるドーパントガスの分解を抑制する冷却構造と、を備えるイオン注入システムを意図する。
Claims (20)
- アークチャンバを有し、当該アークチャンバ内のガスをイオン化するイオン源と、
ドーパントガス源と、
前記ドーパントガス源から前記アークチャンバにドーパントガスを導入するドーパントガス供給ラインと、
前記ドーパントガス供給ラインに関連付けられた冷却構造であって、前記ドーパントガス供給ライン内のドーパントガスを冷却することによって、前記アークチャンバの動作中に生成された熱による前記ドーパントガスの加熱および前記熱から生じる前記ドーパントガスの分解を抑制する冷却構造と、を備え、
前記ドーパントガスは、B 2 F 4 、B 3 F 5 、BHF 2 およびBH 2 Fから選択される少なくとも1つのホウ素化合物を含む、イオン注入システム。 - 前記冷却構造は、前記ドーパントガス供給ラインおよび前記ドーパントガス供給ラインを流れるドーパントガスを冷却する冷却通路を有し、前記ドーパントガス供給ラインはその遠位端において前記アークチャンバにドーパントガスを放出し、前記冷却通路は前記ドーパントガス供給ラインの遠位端部分に配置される、請求項1に記載のイオン注入システム。
- 前記イオン源のための水冷却アセンブリをさらに備え、前記水冷却アセンブリは、前記ドーパントガス供給ラインおよび前記ドーパントガス供給ラインを流れるドーパントガスを冷却するために、前記冷却通路に動作可能に結合されて前記冷却通路に水を流す、請求項2に記載のイオン注入システム。
- 前記ドーパントガスはB 2 H 6 またはB 5 H 9 をさらに含む、請求項1に記載のイオン注入システム。
- 前記ドーパントガスは四フッ化二ホウ素を含み、および、前記冷却構造は、前記ドーパントガス供給ラインにおける四フッ化二ホウ素の温度を700℃未満に維持するように動作する、請求項1に記載のイオン注入システム。
- 前記冷却構造は、前記ドーパントガスの冷却を行うために冷却液が通って流れることができる少なくとも1つの通路をその内部に有するヒートシンク本体を備え、前記ヒートシンク本体は、前記ドーパントガス供給ラインに機械固定により固定され、前記イオン注入システムは、冷却液が循環するイオン源冷却流れ回路を備え、前記流れ回路は、前記少なくとも1つの通路内を冷却液が流れるために、前記ヒートシンク本体に冷却液供給関係で結合される、請求項1に記載のイオン注入システム。
- 洗浄ガス供給部、希釈ガス供給部、および、補助材料供給部のうちの少なくとも1つをさらに備え、
前記洗浄ガス供給部が存在する場合、前記イオン源による前記ドーパントガス源からの前記ドーパントガスの受け取りの間、および/または、前記イオン源が前記ドーパントガス源から前記ドーパントガスを受け取らない場合、前記イオン源は、前記洗浄ガス供給部から洗浄ガスを受け取り、
前記希釈ガス供給部が存在する場合、前記イオン源による前記ドーパントガス源からの前記ドーパントガスの受け取りの間、前記イオン源は、前記希釈ガス供給部から希釈ガスを受け取り、
前記補助材料供給部が存在する場合、前記イオン源による前記ドーパントガス源からの前記ドーパントガスの受け取りの間、前記イオン源は、前記補助材料供給部から補助材料を受け取る、請求項1に記載のイオン注入システム。 - 前記洗浄ガスが、XeF2およびNF3から選択される少なくとも1つのガス種を含み、前記希釈ガスが、XeF2、不活性ガス、希ガス、BF3、H2、Ar、N2、XeとH2との混合物、CH4およびNH3から選択される少なくとも1つの希釈ガス種を含み、前記補助材料が、イオン化反応平衡をB+に向かってシフトするのに効果的な補助材料、水素、メタン、および、前記アークチャンバ内、前記アークチャンバに前記ドーパントガスを流すための前記ドーパントガス供給ライン内および/または前記アークチャンバと前記ドーパントガス供給ラインとの間の境界面の領域内において分解種の堆積を抑制するのに効果的な材料、のうち少なくとも1つを備える、請求項7に記載のイオン注入システム。
- ドーパントガス源からイオン源のアークチャンバに、前記ドーパントガスのイオン化を引き起こす条件化でドーパントガスを通過させる工程と、前記アークチャンバへの進入に先立ってドーパントガス供給ラインにおいて前記ドーパントガスを冷却して、前記アークチャンバの動作中に生成される熱による前記ドーパントガスの加熱および前記熱から生じる前記ドーパントガスの分解を抑制する工程と、を含み、前記ドーパントガスは、B 2 F 4 、B 3 F 5 、BHF 2 およびBH 2 Fから選択される少なくとも1つのホウ素化合物を含む、基板にイオンを注入する方法。
- 前記ドーパントガスは、その遠位端において前記アークチャンバにドーパントガスを放出するドーパントガス供給ライン内を前記アークチャンバに向かって流れ、前記ドーパントガスは前記ドーパントガス供給ラインの遠位端部分で冷却される、請求項9に記載の方法。
- 前記冷却する工程は、前記ドーパントガス供給ラインの前記遠位端部分および前記ドーパントガス供給ラインを流れるドーパントガスを冷却する冷却通路に冷却媒体を流す工程を含む、請求項9に記載の方法。
- 前記ドーパントガスはB 2 H 6 またはB 5 H 9 をさらに含む、請求項9に記載の方法。
- 前記ドーパントガスは四フッ化二ホウ素を含み、および、前記冷却する工程は、前記ドーパントガス供給ラインの前記遠位端部分における前記四フッ化二ホウ素の温度を700℃未満に維持するように動作する、請求項9に記載の方法。
- 前記アークチャンバに、洗浄ガス、希釈ガス、および、補助材料の少なくとも1つを流す工程をさらに含み、前記洗浄ガスが、XeF2およびNF3から選択される少なくとも1つのガス種を含み、前記希釈ガスが、XeF2、不活性ガス、希ガス、BF3、H2、Ar、N2、XeとH2との混合物、CH4およびNH3から選択される少なくとも1つの希釈ガス種を含み、前記補助材料が、イオン化反応平衡をB+に向かってシフトするのに効果的な補助材料、水素、メタン、および、前記アークチャンバ内、前記アークチャンバに前記ドーパントガスを流すためのドーパントガス供給ライン内および/または前記アークチャンバと前記ドーパントガス供給ラインとの間の境界面の領域内において分解種の堆積を抑制するのに効果的な材料、のうち少なくとも1つを備える、請求項9に記載の方法。
- イオン源チャンバであって、当該イオン源チャンバ内のガスをイオン化するイオン源チャンバと、
前記イオン源チャンバに供給される前記ガスを前記イオン源チャンバへの前記ガスの進入の直前にガス供給フィードラインにおいて冷却する冷却構造と、
前記イオン源チャンバにガスを供給する少なくとも1つのガス源容器であって、前記ガスは、B2F4 、B 3F5、BHF2およびBH2Fから選択される少なくとも1つのホウ素化合物を含む、少なくとも1つのガス源容器と、を備えるイオン注入システム。 - 前記ガスがB 2 H 6 をさらに含み、前記少なくとも1つのガス源容器が、前記イオン源チャンバにB2F4およびB2H6を供給する、請求項15に記載のイオン注入システム。
- 前記イオン源チャンバに供給される前記ガスは、洗浄材料、希釈剤、平衡方向指定材料、反応剤および冷却液から構成される群から選択された少なくとも1つの追加材料を含む、請求項15に記載のイオン注入システム。
- イオン化されたドーパント種の生成のためのイオン源チャンバにガスを供給する工程と、前記イオン源チャンバに供給される前記ガスを前記イオン源チャンバへの前記ガスの進入の直前にガス供給フィードラインにおいて冷却する工程と、基板内にイオン化されたドーパント種を注入する工程と、を含み、前記ガスは、B2F4 、B 3F5、BHF2およびBH2Fから選択される少なくとも1つのホウ素化合物を含む、基板にイオンを注入する方法。
- 前記ガスはB 2 H 6 をさらに含み、前記ガスはB2F4およびB2H6を含む、請求項18に記載の方法。
- 前記イオン源チャンバに供給される前記ガスは、洗浄材料、希釈剤、平衡方向指定材料、反応剤および冷却液から構成される群から選択された少なくとも1つの追加材料を含む、請求項18に記載の方法。
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US61/349,202 | 2010-05-27 | ||
US35851410P | 2010-06-25 | 2010-06-25 | |
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Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7943204B2 (en) | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US9166139B2 (en) * | 2009-05-14 | 2015-10-20 | The Neothermal Energy Company | Method for thermally cycling an object including a polarizable material |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
CN105702547B (zh) * | 2009-10-27 | 2021-10-29 | 恩特格里斯公司 | 离子注入系统及方法 |
US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
TWI585042B (zh) | 2010-02-26 | 2017-06-01 | 恩特葛瑞斯股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
US9205392B2 (en) | 2010-08-30 | 2015-12-08 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
US9805912B2 (en) * | 2010-11-17 | 2017-10-31 | Axcelis Technologies, Inc. | Hydrogen COGas for carbon implant |
RU2522662C2 (ru) * | 2011-08-03 | 2014-07-20 | Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") | Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора |
TWI583442B (zh) | 2011-10-10 | 2017-05-21 | 恩特葛瑞斯股份有限公司 | B2f4之製造程序 |
US8779395B2 (en) * | 2011-12-01 | 2014-07-15 | Axcelis Technologies, Inc. | Automatic control system for selection and optimization of co-gas flow levels |
KR20220025123A (ko) | 2012-02-14 | 2022-03-03 | 엔테그리스, 아이엔씨. | 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류 |
US9499921B2 (en) * | 2012-07-30 | 2016-11-22 | Rayton Solar Inc. | Float zone silicon wafer manufacturing system and related process |
CN103785647A (zh) * | 2012-10-26 | 2014-05-14 | 上海华虹宏力半导体制造有限公司 | 离子注入设备自动清洁离子腔体以提高部件寿命的方法 |
US8796649B2 (en) * | 2012-11-29 | 2014-08-05 | Ion Technology Solutions, Llc | Ion implanter |
TWI610330B (zh) * | 2012-12-14 | 2018-01-01 | 艾克塞利斯科技公司 | 針對共同氣體流層級的選擇和最佳化的自動控制系統 |
EP2936540B1 (en) * | 2012-12-21 | 2019-02-13 | Praxair Technology Inc. | Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation |
KR102138400B1 (ko) | 2013-03-05 | 2020-07-27 | 엔테그리스, 아이엔씨. | 이온 주입 조성물, 시스템 및 방법 |
US9524849B2 (en) * | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
SG10201801299YA (en) * | 2013-08-16 | 2018-03-28 | Entegris Inc | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
JP6490917B2 (ja) * | 2013-08-23 | 2019-03-27 | 株式会社日立ハイテクサイエンス | 修正装置 |
US9275820B2 (en) * | 2013-08-27 | 2016-03-01 | Varian Semiconductor Equipment Associates, Inc. | Gas coupled arc chamber cooling |
US9520204B2 (en) * | 2013-12-26 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Cold stripper for high energy ion implanter with tandem accelerator |
US9570271B2 (en) | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
US10039157B2 (en) * | 2014-06-02 | 2018-07-31 | Applied Materials, Inc. | Workpiece processing chamber having a rotary microwave plasma source |
US10269541B2 (en) | 2014-06-02 | 2019-04-23 | Applied Materials, Inc. | Workpiece processing chamber having a thermal controlled microwave window |
WO2016036512A1 (en) * | 2014-09-01 | 2016-03-10 | Entegris, Inc. | Phosphorus or arsenic ion implantation utilizing enhanced source techniques |
KR101952698B1 (ko) * | 2014-10-27 | 2019-02-28 | 엔테그리스, 아이엔씨. | 이온 주입 방법 및 장치 |
US20160217970A1 (en) * | 2015-01-28 | 2016-07-28 | Advanced Ion Beam Technology, Inc. | Ion implanter and method for ion implantation |
US9734991B2 (en) * | 2015-07-28 | 2017-08-15 | Varian Semiconductor Equipment Associates, Inc. | Negative ribbon ion beams from pulsed plasmas |
US9620376B2 (en) * | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
US9818570B2 (en) * | 2015-10-23 | 2017-11-14 | Varian Semiconductor Equipment Associates, Inc. | Ion source for multiple charged species |
US9859098B2 (en) * | 2015-12-22 | 2018-01-02 | Varian Semiconductor Equipment Associates, Inc. | Temperature controlled ion source |
CN108369886B (zh) * | 2015-12-27 | 2020-08-14 | 恩特格里斯公司 | 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能 |
TWI550678B (zh) * | 2016-05-11 | 2016-09-21 | 粘俊能 | 離子源及其熱電子產生方法 |
US11154903B2 (en) * | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
TWI592972B (zh) * | 2016-07-18 | 2017-07-21 | 粘俊能 | 具雙熱電子源之離子源及其熱電子產生方法 |
JP6380483B2 (ja) | 2016-08-10 | 2018-08-29 | トヨタ自動車株式会社 | 成膜装置 |
US10410844B2 (en) | 2016-12-09 | 2019-09-10 | Varian Semiconductor Equipment Associates, Inc. | RF clean system for electrostatic elements |
US11222769B2 (en) | 2017-05-26 | 2022-01-11 | Applied Materials, Inc. | Monopole antenna array source with gas supply or grid filter for semiconductor process equipment |
US10676370B2 (en) * | 2017-06-05 | 2020-06-09 | Axcelis Technologies, Inc. | Hydrogen co-gas when using aluminum iodide as an ion source material |
US10541122B2 (en) * | 2017-06-13 | 2020-01-21 | Mks Instruments, Inc. | Robust ion source |
US10892136B2 (en) * | 2018-08-13 | 2021-01-12 | Varian Semiconductor Equipment Associates, Inc. | Ion source thermal gas bushing |
US11404254B2 (en) * | 2018-09-19 | 2022-08-02 | Varian Semiconductor Equipment Associates, Inc. | Insertable target holder for solid dopant materials |
US11295926B2 (en) | 2018-11-28 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Repellent electrode for electron repelling |
US11315791B2 (en) | 2018-12-15 | 2022-04-26 | Entegris, Inc. | Fluorine ion implantation method and system |
TWI725384B (zh) * | 2019-02-22 | 2021-04-21 | 力晶積成電子製造股份有限公司 | 半導體離子植入機的離子源頭結構 |
EP4000086A4 (en) | 2019-07-18 | 2023-07-19 | Entegris, Inc. | ION IMPLANTATION SYSTEM USING A MIXTURE OF ARC CHAMBER MATERIAL |
WO2021055606A1 (en) | 2019-09-20 | 2021-03-25 | Entegris, Inc. | Plasma immersion methods for ion implantation |
CN116325070A (zh) * | 2020-10-02 | 2023-06-23 | 恩特格里斯公司 | 用于产生铝离子的方法及系统 |
US20240043988A1 (en) * | 2022-08-05 | 2024-02-08 | Entegris, Inc. | Gas mixture as co-gas for ion implant |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1399050A (en) * | 1973-08-21 | 1975-06-25 | Standard Telephones Cables Ltd | Graphite tube furnace |
JPS58197775A (ja) | 1982-05-13 | 1983-11-17 | Canon Inc | 薄膜トランジスタ |
JPS6295820A (ja) | 1985-10-23 | 1987-05-02 | Hitachi Ltd | イオン打込み方法 |
JP2533639B2 (ja) * | 1988-10-07 | 1996-09-11 | 株式会社富士電機総合研究所 | P形炭素添加非晶質シリコンの生成方法 |
US4987933A (en) | 1989-03-03 | 1991-01-29 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
JPH03165443A (ja) | 1989-11-24 | 1991-07-17 | Shimadzu Corp | イオン注入方法 |
US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
JP3250573B2 (ja) | 1992-12-28 | 2002-01-28 | キヤノン株式会社 | 光起電力素子及びその製造方法、並びに発電システム |
JPH0765761A (ja) | 1993-08-30 | 1995-03-10 | Hitachi Ltd | 薄膜形成方法およびイオン注入方法 |
US5443732A (en) | 1994-04-01 | 1995-08-22 | Westinghouse Electric Corporation | Boron isotope separation using continuous ion exchange chromatography |
JP3502185B2 (ja) | 1995-04-12 | 2004-03-02 | 松下電器産業株式会社 | イオン注入方法 |
US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
US7118996B1 (en) * | 1996-05-15 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
US6242080B1 (en) * | 1997-07-09 | 2001-06-05 | Canon Kabushiki Kaisha | Zinc oxide thin film and process for producing the film |
US6135128A (en) | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
EP2426693A3 (en) * | 1999-12-13 | 2013-01-16 | Semequip, Inc. | Ion source |
EP1303866B1 (en) | 2000-07-10 | 2009-12-09 | TEL Epion Inc. | System and method for improving thin films by gas cluster ion be am processing |
US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US6670623B2 (en) * | 2001-03-07 | 2003-12-30 | Advanced Technology Materials, Inc. | Thermal regulation of an ion implantation system |
JP3824058B2 (ja) | 2001-05-23 | 2006-09-20 | 独立行政法人産業技術総合研究所 | カルボランスーパークラスターおよびその製造方法 |
US7518124B2 (en) * | 2002-03-28 | 2009-04-14 | Applied Materials, Inc. | Monatomic dopant ion source and method |
US7138768B2 (en) | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
KR100864048B1 (ko) | 2002-06-26 | 2008-10-17 | 세미이큅, 인코포레이티드 | 이온 소스 |
US20040110351A1 (en) | 2002-12-05 | 2004-06-10 | International Business Machines Corporation | Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device |
US6936505B2 (en) | 2003-05-20 | 2005-08-30 | Intel Corporation | Method of forming a shallow junction |
WO2005001869A2 (en) | 2003-06-06 | 2005-01-06 | Ionwerks | Gold implantation/deposition of biological samples for laser desorption three dimensional depth profiling of tissues |
WO2005060602A2 (en) | 2003-12-12 | 2005-07-07 | Semequip, Inc. | Controlling the flow of vapors sublimated from solids |
TWI375660B (en) | 2004-01-22 | 2012-11-01 | Semequip Inc | Isotopically-enriched boranes and methods of preparing them |
TWI372725B (en) | 2004-01-30 | 2012-09-21 | Semequip Inc | Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes |
US7015108B2 (en) | 2004-02-26 | 2006-03-21 | Intel Corporation | Implanting carbon to form P-type drain extensions |
US7397048B2 (en) | 2004-09-17 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for boron implantation |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
WO2006120908A1 (ja) * | 2005-05-02 | 2006-11-16 | Nichia Corporation | 窒化物系半導体素子及びその製造方法 |
WO2008121620A1 (en) * | 2007-03-30 | 2008-10-09 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
US7943204B2 (en) * | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
KR101455404B1 (ko) | 2005-12-09 | 2014-10-27 | 세미이큅, 인코포레이티드 | 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법 |
US20070178679A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US8013312B2 (en) | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
US7919402B2 (en) | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US7732309B2 (en) | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
US20080164427A1 (en) | 2007-01-09 | 2008-07-10 | Applied Materials, Inc. | Ion implanters |
US7655931B2 (en) * | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
US20080305598A1 (en) | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
US20090087970A1 (en) * | 2007-09-27 | 2009-04-02 | Applied Materials, Inc. | Method of producing a dopant gas species |
US7794798B2 (en) | 2007-09-29 | 2010-09-14 | Tel Epion Inc. | Method for depositing films using gas cluster ion beam processing |
EP2212251B1 (en) | 2007-11-02 | 2016-12-21 | Semequip, Inc. | Methods of preparing clusterboron |
US7858503B2 (en) * | 2009-02-06 | 2010-12-28 | Applied Materials, Inc. | Ion implanted substrate having capping layer and method |
US7947582B2 (en) | 2009-02-27 | 2011-05-24 | Tel Epion Inc. | Material infusion in a trap layer structure using gas cluster ion beam processing |
US9627180B2 (en) | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
US8237136B2 (en) | 2009-10-08 | 2012-08-07 | Tel Epion Inc. | Method and system for tilting a substrate during gas cluster ion beam processing |
CN105702547B (zh) * | 2009-10-27 | 2021-10-29 | 恩特格里斯公司 | 离子注入系统及方法 |
US8187971B2 (en) | 2009-11-16 | 2012-05-29 | Tel Epion Inc. | Method to alter silicide properties using GCIB treatment |
JP5714831B2 (ja) | 2010-03-18 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
SG10201406528PA (en) | 2014-12-30 |
EP3062330A2 (en) | 2016-08-31 |
KR101747473B1 (ko) | 2017-06-27 |
JP2013509004A (ja) | 2013-03-07 |
CN105702547B (zh) | 2021-10-29 |
CN102668016A (zh) | 2012-09-12 |
EP2494581B1 (en) | 2016-05-18 |
EP2494581A4 (en) | 2015-03-18 |
EP2494581A2 (en) | 2012-09-05 |
TW201137925A (en) | 2011-11-01 |
TW201604915A (zh) | 2016-02-01 |
SG10201605310RA (en) | 2016-08-30 |
US9111860B2 (en) | 2015-08-18 |
US20150357152A1 (en) | 2015-12-10 |
EP3062330A3 (en) | 2016-11-16 |
CN105702547A (zh) | 2016-06-22 |
US20120252195A1 (en) | 2012-10-04 |
TWI584336B (zh) | 2017-05-21 |
US8796131B2 (en) | 2014-08-05 |
WO2011056515A3 (en) | 2011-08-25 |
CN102668016B (zh) | 2016-02-24 |
TWI496183B (zh) | 2015-08-11 |
KR20120106947A (ko) | 2012-09-27 |
WO2011056515A2 (en) | 2011-05-12 |
US20140342538A1 (en) | 2014-11-20 |
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