SE9901304L - Förspänningsarrangemang för fälteffekttransistorer - Google Patents

Förspänningsarrangemang för fälteffekttransistorer

Info

Publication number
SE9901304L
SE9901304L SE9901304A SE9901304A SE9901304L SE 9901304 L SE9901304 L SE 9901304L SE 9901304 A SE9901304 A SE 9901304A SE 9901304 A SE9901304 A SE 9901304A SE 9901304 L SE9901304 L SE 9901304L
Authority
SE
Sweden
Prior art keywords
source
impedance
bypass capacitor
ground
field effect
Prior art date
Application number
SE9901304A
Other languages
English (en)
Other versions
SE9901304D0 (sv
SE514160C2 (sv
Inventor
Per-Olof Magnus Brandt
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9901304A priority Critical patent/SE514160C2/sv
Publication of SE9901304D0 publication Critical patent/SE9901304D0/sv
Priority to CNB008061459A priority patent/CN1158754C/zh
Priority to JP2000611377A priority patent/JP4430246B2/ja
Priority to IL14560300A priority patent/IL145603A/xx
Priority to KR1020017013027A priority patent/KR20010110743A/ko
Priority to PCT/SE2000/000632 priority patent/WO2000062418A1/en
Priority to DE60036696T priority patent/DE60036696D1/de
Priority to AU46313/00A priority patent/AU4631300A/en
Priority to AT00928015T priority patent/ATE375624T1/de
Priority to EP00928015A priority patent/EP1169776B1/en
Priority to BR0009744-6A priority patent/BR0009744A/pt
Priority to US09/547,114 priority patent/US6377124B1/en
Priority to MYPI20001536A priority patent/MY123482A/en
Publication of SE9901304L publication Critical patent/SE9901304L/sv
Publication of SE514160C2 publication Critical patent/SE514160C2/sv
Priority to HK02107411.4A priority patent/HK1046069B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
SE9901304A 1999-04-13 1999-04-13 Förspänningsarrangemang för fälteffekttransistorer SE514160C2 (sv)

Priority Applications (14)

Application Number Priority Date Filing Date Title
SE9901304A SE514160C2 (sv) 1999-04-13 1999-04-13 Förspänningsarrangemang för fälteffekttransistorer
BR0009744-6A BR0009744A (pt) 1999-04-13 2000-03-31 Amplificador, e, telefone móvel
DE60036696T DE60036696D1 (de) 1999-04-13 2000-03-31 Vorspannungsvorrichtungfür feldeffekttransistoren
AT00928015T ATE375624T1 (de) 1999-04-13 2000-03-31 Vorspannungsvorrichtungfür feldeffekttransistoren
IL14560300A IL145603A (en) 1999-04-13 2000-03-31 Biasing arrangement for field effect transistors
KR1020017013027A KR20010110743A (ko) 1999-04-13 2000-03-31 전계 효과 트랜지스터용 바이어스 장치
PCT/SE2000/000632 WO2000062418A1 (en) 1999-04-13 2000-03-31 Biasing arrangement for field effect transistors
CNB008061459A CN1158754C (zh) 1999-04-13 2000-03-31 用于场效应晶体管的偏置装置
AU46313/00A AU4631300A (en) 1999-04-13 2000-03-31 Biasing arrangement for field effect transistors
JP2000611377A JP4430246B2 (ja) 1999-04-13 2000-03-31 電界効果トランジスタのためのバイアス構成
EP00928015A EP1169776B1 (en) 1999-04-13 2000-03-31 Biasing arrangement for field effect transistors
US09/547,114 US6377124B1 (en) 1999-04-13 2000-04-11 Biasing arrangement for field effect transistors
MYPI20001536A MY123482A (en) 1999-04-13 2000-04-12 Biasing arrangement for field effect transistors.
HK02107411.4A HK1046069B (zh) 1999-04-13 2002-10-10 用於場效應晶體管的偏置裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901304A SE514160C2 (sv) 1999-04-13 1999-04-13 Förspänningsarrangemang för fälteffekttransistorer

Publications (3)

Publication Number Publication Date
SE9901304D0 SE9901304D0 (sv) 1999-04-13
SE9901304L true SE9901304L (sv) 2000-10-14
SE514160C2 SE514160C2 (sv) 2001-01-15

Family

ID=20415186

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901304A SE514160C2 (sv) 1999-04-13 1999-04-13 Förspänningsarrangemang för fälteffekttransistorer

Country Status (14)

Country Link
US (1) US6377124B1 (sv)
EP (1) EP1169776B1 (sv)
JP (1) JP4430246B2 (sv)
KR (1) KR20010110743A (sv)
CN (1) CN1158754C (sv)
AT (1) ATE375624T1 (sv)
AU (1) AU4631300A (sv)
BR (1) BR0009744A (sv)
DE (1) DE60036696D1 (sv)
HK (1) HK1046069B (sv)
IL (1) IL145603A (sv)
MY (1) MY123482A (sv)
SE (1) SE514160C2 (sv)
WO (1) WO2000062418A1 (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE514257C2 (sv) * 1999-03-16 2001-01-29 Ericsson Telefon Ab L M Portabel radiosändare/mottagare
CN100407572C (zh) * 2004-08-02 2008-07-30 阎跃军 场效应管偏置电路
US7154337B2 (en) 2004-10-28 2006-12-26 Raytheon Company Amplifying a signal using a control modulator that provides a bias resistance
JP2009088751A (ja) * 2007-09-28 2009-04-23 Muneo Yamabe 増幅回路
CN102804595B (zh) * 2009-06-19 2015-05-13 皇家飞利浦电子股份有限公司 改进用于mri的低噪声前置放大器的输入阻抗
CN102771047B (zh) * 2010-02-25 2014-12-03 夏普株式会社 偏置电路、lna、lnb、通信用接收机、通信用发送机及传感器系统
JP5770561B2 (ja) * 2011-08-19 2015-08-26 日本放送協会 電波受信・光伝送システム
US8723602B2 (en) * 2012-08-10 2014-05-13 Tensorcom, Inc. Method and apparatus for a class-E load tuned beamforming 60 GHz transmitter
US8873339B2 (en) 2012-08-10 2014-10-28 Tensorcom, Inc. Method and apparatus for a clock and signal distribution network for a 60 GHz transmitter system
JP5952447B2 (ja) * 2015-03-02 2016-07-13 日本放送協会 電波受信・光伝送システム
CN105048969B (zh) * 2015-07-15 2018-01-09 京信通信系统（中国）有限公司 GaN HEMT偏置电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631493A (en) * 1985-03-18 1986-12-23 Eaton Corporation Circuit for DC biasing
US5162755A (en) * 1991-10-29 1992-11-10 Raytheon Company Radio frequency amplifier circuit
JPH07240638A (ja) * 1994-03-01 1995-09-12 Sumitomo Electric Ind Ltd 高周波増幅器
JPH0878969A (ja) * 1994-08-31 1996-03-22 Sanyo Electric Co Ltd 電力増幅回路
KR970055703A (ko) * 1995-12-20 1997-07-31 양승택 능동 직각 전력 분배기
JPH09283710A (ja) * 1996-04-08 1997-10-31 Oki Electric Ind Co Ltd Ｆｅｔのゲートバイアス回路
JP3695938B2 (ja) * 1998-05-28 2005-09-14 アルプス電気株式会社 緩衝増幅回路

Also Published As

Publication number Publication date
IL145603A0 (en) 2002-06-30
MY123482A (en) 2006-05-31
HK1046069A1 (en) 2002-12-20
HK1046069B (zh) 2005-04-22
ATE375624T1 (de) 2007-10-15
CN1158754C (zh) 2004-07-21
WO2000062418A1 (en) 2000-10-19
CN1346537A (zh) 2002-04-24
JP4430246B2 (ja) 2010-03-10
IL145603A (en) 2005-05-17
SE9901304D0 (sv) 1999-04-13
BR0009744A (pt) 2002-01-08
JP2002542643A (ja) 2002-12-10
EP1169776A1 (en) 2002-01-09
AU4631300A (en) 2000-11-14
US6377124B1 (en) 2002-04-23
KR20010110743A (ko) 2001-12-13
SE514160C2 (sv) 2001-01-15
DE60036696D1 (de) 2007-11-22
EP1169776B1 (en) 2007-10-10

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