SE0302297D0 - Monolithically integrated power amplifier device - Google Patents

Monolithically integrated power amplifier device

Info

Publication number
SE0302297D0
SE0302297D0 SE0302297A SE0302297A SE0302297D0 SE 0302297 D0 SE0302297 D0 SE 0302297D0 SE 0302297 A SE0302297 A SE 0302297A SE 0302297 A SE0302297 A SE 0302297A SE 0302297 D0 SE0302297 D0 SE 0302297D0
Authority
SE
Sweden
Prior art keywords
power amplifier
stage
monolithically integrated
amplifier device
microwave signal
Prior art date
Application number
SE0302297A
Other languages
English (en)
Other versions
SE527082C2 (sv
SE0302297L (sv
Inventor
Andrej Litwin
Paul Andersson
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302297A priority Critical patent/SE527082C2/sv
Publication of SE0302297D0 publication Critical patent/SE0302297D0/sv
Priority to US10/882,868 priority patent/US7098741B2/en
Priority to DE102004038851A priority patent/DE102004038851B4/de
Publication of SE0302297L publication Critical patent/SE0302297L/sv
Publication of SE527082C2 publication Critical patent/SE527082C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
SE0302297A 2003-08-27 2003-08-27 Monolitiskt integrerad effektförstärkaranordning SE527082C2 (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0302297A SE527082C2 (sv) 2003-08-27 2003-08-27 Monolitiskt integrerad effektförstärkaranordning
US10/882,868 US7098741B2 (en) 2003-08-27 2004-07-01 Monolithically integrated power amplifier device
DE102004038851A DE102004038851B4 (de) 2003-08-27 2004-08-10 Monolithisch integrierter Leistungsverstärker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302297A SE527082C2 (sv) 2003-08-27 2003-08-27 Monolitiskt integrerad effektförstärkaranordning

Publications (3)

Publication Number Publication Date
SE0302297D0 true SE0302297D0 (sv) 2003-08-27
SE0302297L SE0302297L (sv) 2005-02-28
SE527082C2 SE527082C2 (sv) 2005-12-20

Family

ID=28673195

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302297A SE527082C2 (sv) 2003-08-27 2003-08-27 Monolitiskt integrerad effektförstärkaranordning

Country Status (3)

Country Link
US (1) US7098741B2 (sv)
DE (1) DE102004038851B4 (sv)
SE (1) SE527082C2 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652539B2 (en) * 2005-10-31 2010-01-26 Huai Gao Multi-stage broadband amplifiers
JP2010278521A (ja) * 2009-05-26 2010-12-09 Mitsubishi Electric Corp 電力増幅器
US8928412B2 (en) * 2013-01-17 2015-01-06 Microelectronics Technology, Inc. Precise current source circuit for bias supply of RF MMIC gain block amplifier application

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1199378A (en) * 1984-04-02 1986-01-14 Paul Bura High frequency amplifier with phase compensation
JP3359770B2 (ja) 1995-02-08 2002-12-24 アルプス電気株式会社 トランジスタ高周波電力増幅器
US6163220A (en) 1998-06-05 2000-12-19 Schellenberg; James M. High-voltage, series-biased FET amplifier for high-efficiency applications
SG90712A1 (en) 1998-12-05 2002-08-20 Inst Of Microelectronics Power amplifier
US6166598A (en) 1999-07-22 2000-12-26 Motorola, Inc. Power amplifying circuit with supply adjust to control adjacent and alternate channel power
DE10023524C2 (de) * 2000-05-13 2002-07-11 Micronas Gmbh Zweistufiger Verstärker
US6476678B1 (en) * 2000-08-04 2002-11-05 Maxim Integrated Products, Inc. High performance amplifier circuits using separate power supplies
US6362689B1 (en) 2000-09-22 2002-03-26 U.S. Monolithics, L.L.C. MMIC folded power amplifier
SE519382C2 (sv) 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana

Also Published As

Publication number Publication date
SE527082C2 (sv) 2005-12-20
DE102004038851A1 (de) 2005-06-09
US7098741B2 (en) 2006-08-29
SE0302297L (sv) 2005-02-28
DE102004038851B4 (de) 2010-03-04
US20050046484A1 (en) 2005-03-03

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