SE9500327D0 - Device for epitaxially growing SiC by CVD - Google Patents

Device for epitaxially growing SiC by CVD

Info

Publication number
SE9500327D0
SE9500327D0 SE9500327A SE9500327A SE9500327D0 SE 9500327 D0 SE9500327 D0 SE 9500327D0 SE 9500327 A SE9500327 A SE 9500327A SE 9500327 A SE9500327 A SE 9500327A SE 9500327 D0 SE9500327 D0 SE 9500327D0
Authority
SE
Sweden
Prior art keywords
substrate
susceptor
epitaxially growing
tube
cvd
Prior art date
Application number
SE9500327A
Other languages
English (en)
Swedish (sv)
Inventor
Nils Nordell
Gunnar Andersson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9500327A priority Critical patent/SE9500327D0/xx
Publication of SE9500327D0 publication Critical patent/SE9500327D0/xx
Priority to PCT/SE1996/000071 priority patent/WO1996023912A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
SE9500327A 1995-01-31 1995-01-31 Device for epitaxially growing SiC by CVD SE9500327D0 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE9500327A SE9500327D0 (sv) 1995-01-31 1995-01-31 Device for epitaxially growing SiC by CVD
PCT/SE1996/000071 WO1996023912A1 (fr) 1995-01-31 1996-01-24 DISPOSITIF UTILISE POUR LA CROISSANCE EPITAXIALE DE SiC PAR DEPOT CHIMIQUE EN PHASE VAPEUR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500327A SE9500327D0 (sv) 1995-01-31 1995-01-31 Device for epitaxially growing SiC by CVD

Publications (1)

Publication Number Publication Date
SE9500327D0 true SE9500327D0 (sv) 1995-01-31

Family

ID=20397016

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500327A SE9500327D0 (sv) 1995-01-31 1995-01-31 Device for epitaxially growing SiC by CVD

Country Status (2)

Country Link
SE (1) SE9500327D0 (fr)
WO (1) WO1996023912A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759263A (en) * 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
FR2786208B1 (fr) 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610921A (en) * 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace
US4664944A (en) * 1986-01-31 1987-05-12 The United States Of America As Represented By The United States Department Of Energy Deposition method for producing silicon carbide high-temperature semiconductors
SE458567B (sv) * 1987-08-17 1989-04-10 Epiquip Ab Reaktionscell foer epitaxiell tillvaext av halvledarmaterial
AU2250392A (en) * 1991-06-12 1993-01-12 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

Also Published As

Publication number Publication date
WO1996023912A1 (fr) 1996-08-08

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