SE9102042L - Gto-tyristor jaemte foerfarande foer framstaellning av en gto- tyristor - Google Patents

Gto-tyristor jaemte foerfarande foer framstaellning av en gto- tyristor

Info

Publication number
SE9102042L
SE9102042L SE9102042A SE9102042A SE9102042L SE 9102042 L SE9102042 L SE 9102042L SE 9102042 A SE9102042 A SE 9102042A SE 9102042 A SE9102042 A SE 9102042A SE 9102042 L SE9102042 L SE 9102042L
Authority
SE
Sweden
Prior art keywords
gto
islands
layer
tyrist
tyristor
Prior art date
Application number
SE9102042A
Other languages
English (en)
Other versions
SE470226B (sv
SE9102042D0 (sv
Inventor
Mietek Bakowski
Haakan Elderstig
Martin Ljungberg
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9102042A priority Critical patent/SE470226B/sv
Publication of SE9102042D0 publication Critical patent/SE9102042D0/sv
Priority to EP92915295A priority patent/EP0592587A1/en
Priority to JP5501764A priority patent/JPH06511601A/ja
Priority to PCT/SE1992/000472 priority patent/WO1993001620A1/en
Publication of SE9102042L publication Critical patent/SE9102042L/sv
Publication of SE470226B publication Critical patent/SE470226B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
SE9102042A 1991-07-01 1991-07-01 GTO-tyristor jämte förfarande för framställning av en GTO- tyristor SE470226B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9102042A SE470226B (sv) 1991-07-01 1991-07-01 GTO-tyristor jämte förfarande för framställning av en GTO- tyristor
EP92915295A EP0592587A1 (en) 1991-07-01 1992-06-25 A gto-thyristor and a method for the manufacture of a gto-thyristor
JP5501764A JPH06511601A (ja) 1991-07-01 1992-06-25 Ｇｔｏサイリスタおよびｇｔｏサイリスタを製造するための方法
PCT/SE1992/000472 WO1993001620A1 (en) 1991-07-01 1992-06-25 A gto-thyristor and a method for the manufacture of a gto-thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9102042A SE470226B (sv) 1991-07-01 1991-07-01 GTO-tyristor jämte förfarande för framställning av en GTO- tyristor

Publications (3)

Publication Number Publication Date
SE9102042D0 SE9102042D0 (sv) 1991-07-01
SE9102042L true SE9102042L (sv) 1993-01-02
SE470226B SE470226B (sv) 1993-12-06

Family

ID=20383215

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9102042A SE470226B (sv) 1991-07-01 1991-07-01 GTO-tyristor jämte förfarande för framställning av en GTO- tyristor

Country Status (4)

Country Link
EP (1) EP0592587A1 (sv)
JP (1) JPH06511601A (sv)
SE (1) SE470226B (sv)
WO (1) WO1993001620A1 (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法
US5841155A (en) * 1995-02-08 1998-11-24 Ngk Insulators, Ltd. Semiconductor device containing two joined substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382278A (en) * 1976-12-28 1978-07-20 Toshiba Corp Production of semiconductor device
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
JPH0715991B2 (ja) * 1985-06-12 1995-02-22 株式会社東芝 半導体装置の製造方法
DE3869382D1 (de) * 1988-01-27 1992-04-23 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
FR2638022B1 (fr) * 1988-10-14 1992-08-28 Sgs Thomson Microelectronics Thyristor asymetrique a extinction par la gachette, muni de courts-circuits d'anode et presentant un courant de declenchement reduit
EP0391337B1 (en) * 1989-04-04 1998-11-18 Hitachi, Ltd. Gate turn-off thyristor

Also Published As

Publication number Publication date
SE470226B (sv) 1993-12-06
WO1993001620A1 (en) 1993-01-21
EP0592587A1 (en) 1994-04-20
JPH06511601A (ja) 1994-12-22
SE9102042D0 (sv) 1991-07-01

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