SE8603963D0 - Kontakt med lag resistans for ett halvledarorgan samt sett att framstella densamma - Google Patents
Kontakt med lag resistans for ett halvledarorgan samt sett att framstella densammaInfo
- Publication number
- SE8603963D0 SE8603963D0 SE8603963A SE8603963A SE8603963D0 SE 8603963 D0 SE8603963 D0 SE 8603963D0 SE 8603963 A SE8603963 A SE 8603963A SE 8603963 A SE8603963 A SE 8603963A SE 8603963 D0 SE8603963 D0 SE 8603963D0
- Authority
- SE
- Sweden
- Prior art keywords
- contact
- setting
- make
- semiconductor
- organ
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 210000000056 organ Anatomy 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78095685A | 1985-09-27 | 1985-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8603963D0 true SE8603963D0 (sv) | 1986-09-19 |
SE8603963L SE8603963L (sv) | 1987-03-28 |
Family
ID=25121206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8603963A SE8603963L (sv) | 1985-09-27 | 1986-09-19 | Kontakt med lag resistans for ett halvledarorgan samt sett att framstella densamma |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS6278817A (sv) |
KR (1) | KR940009584B1 (sv) |
DE (1) | DE3632217A1 (sv) |
SE (1) | SE8603963L (sv) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2624304B1 (fr) * | 1987-12-04 | 1990-05-04 | Philips Nv | Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5575256A (en) * | 1978-12-01 | 1980-06-06 | Nec Corp | Semiconductor device |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS60119750A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 半導体装置の製造方法 |
-
1986
- 1986-09-19 SE SE8603963A patent/SE8603963L/sv not_active Application Discontinuation
- 1986-09-22 JP JP61224069A patent/JPS6278817A/ja active Pending
- 1986-09-23 DE DE19863632217 patent/DE3632217A1/de not_active Withdrawn
- 1986-09-25 KR KR1019860008003A patent/KR940009584B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940009584B1 (ko) | 1994-10-15 |
SE8603963L (sv) | 1987-03-28 |
JPS6278817A (ja) | 1987-04-11 |
DE3632217A1 (de) | 1987-04-02 |
KR870003581A (ko) | 1987-04-18 |
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NAV | Patent application has lapsed |
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