DE3576243D1 - Halbleiteranordnung mit einem bipolar-transistor und mit einem fet mit isolierendem gate. - Google Patents
Halbleiteranordnung mit einem bipolar-transistor und mit einem fet mit isolierendem gate.Info
- Publication number
- DE3576243D1 DE3576243D1 DE8585201381T DE3576243T DE3576243D1 DE 3576243 D1 DE3576243 D1 DE 3576243D1 DE 8585201381 T DE8585201381 T DE 8585201381T DE 3576243 T DE3576243 T DE 3576243T DE 3576243 D1 DE3576243 D1 DE 3576243D1
- Authority
- DE
- Germany
- Prior art keywords
- fet
- bipolar transistor
- semiconductor arrangement
- insulating gate
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08423690A GB2164790A (en) | 1984-09-19 | 1984-09-19 | Merged bipolar and field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3576243D1 true DE3576243D1 (de) | 1990-04-05 |
Family
ID=10566949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585201381T Expired - Lifetime DE3576243D1 (de) | 1984-09-19 | 1985-09-03 | Halbleiteranordnung mit einem bipolar-transistor und mit einem fet mit isolierendem gate. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4729007A (de) |
EP (1) | EP0180255B1 (de) |
JP (1) | JPH0656881B2 (de) |
DE (1) | DE3576243D1 (de) |
GB (1) | GB2164790A (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2190539A (en) * | 1986-05-16 | 1987-11-18 | Philips Electronic Associated | Semiconductor devices |
JPH0654796B2 (ja) * | 1986-07-14 | 1994-07-20 | 株式会社日立製作所 | 複合半導体装置 |
US4847671A (en) * | 1987-05-19 | 1989-07-11 | General Electric Company | Monolithically integrated insulated gate semiconductor device |
KR900001062B1 (ko) * | 1987-09-15 | 1990-02-26 | 강진구 | 반도체 바이 씨 모오스 장치의 제조방법 |
US4830973A (en) * | 1987-10-06 | 1989-05-16 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
US5117274A (en) * | 1987-10-06 | 1992-05-26 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
IT1217323B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione |
US4998156A (en) * | 1988-03-25 | 1991-03-05 | General Electric Company | Structure for a complementary-symmetry COMFET pair |
US5247200A (en) * | 1989-02-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | MOSFET input type BiMOS IC device |
DE3941932A1 (de) * | 1989-12-19 | 1991-06-20 | Eupec Gmbh & Co Kg | Verfahren zum herstellen von anodenseitigen kurzschluessen in thyristoren |
JPH0421211A (ja) * | 1990-05-16 | 1992-01-24 | Toshiba Corp | 半導体素子の駆動方法およびその駆動装置 |
JPH0795597B2 (ja) * | 1990-08-18 | 1995-10-11 | 三菱電機株式会社 | サイリスタおよびその製造方法 |
JPH04280475A (ja) * | 1991-03-08 | 1992-10-06 | Fuji Electric Co Ltd | 半導体スイッチング装置 |
US6004840A (en) * | 1994-04-15 | 1999-12-21 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion |
DE69528683T2 (de) * | 1994-04-15 | 2003-06-12 | Toshiba Kawasaki Kk | Halbleiterbauteil und Verfahren zur Herstellung desselben |
US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663869A (en) * | 1971-01-26 | 1972-05-16 | Westinghouse Electric Corp | Bipolar-unipolar transistor structure |
JPS5773964A (en) * | 1980-10-27 | 1982-05-08 | Oki Electric Ind Co Ltd | Semiconductor integrated circuit device |
FR2505102B1 (fr) * | 1981-04-29 | 1986-01-24 | Radiotechnique Compelec | Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
DE3470632D1 (en) * | 1983-02-03 | 1988-05-26 | Fairchild Camera Instr Co | High voltage mos/bipolar power transistor apparatus |
US4611235A (en) * | 1984-06-04 | 1986-09-09 | General Motors Corporation | Thyristor with turn-off FET |
-
1984
- 1984-09-19 GB GB08423690A patent/GB2164790A/en not_active Withdrawn
-
1985
- 1985-09-03 DE DE8585201381T patent/DE3576243D1/de not_active Expired - Lifetime
- 1985-09-03 EP EP85201381A patent/EP0180255B1/de not_active Expired
- 1985-09-17 JP JP60205175A patent/JPH0656881B2/ja not_active Expired - Lifetime
- 1985-09-17 US US06/777,066 patent/US4729007A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0180255B1 (de) | 1990-02-28 |
GB2164790A (en) | 1986-03-26 |
JPS6177355A (ja) | 1986-04-19 |
GB8423690D0 (en) | 1984-10-24 |
JPH0656881B2 (ja) | 1994-07-27 |
EP0180255A2 (de) | 1986-05-07 |
US4729007A (en) | 1988-03-01 |
EP0180255A3 (en) | 1986-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3576243D1 (de) | Halbleiteranordnung mit einem bipolar-transistor und mit einem fet mit isolierendem gate. | |
DE3689445D1 (de) | Schutzschaltung für einen Bipolartransistor mit isoliertem Gate. | |
DE3688222T2 (de) | Halbleitereinrichtung mit bipolarem transistor und isolierschicht-feldeffekttransistor. | |
DE3382717D1 (de) | Torschaltung mit Feldeffekt- und Bipolartransistoren. | |
DE3686971D1 (de) | Lateraler transistor mit isoliertem gate mit latch-up-festigkeit. | |
DE3578271D1 (de) | Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer. | |
KR860004483A (ko) | 헤테로 접합 바이폴라 트랜지스터 | |
DE69021177T2 (de) | Halbleiteranordnung mit isolierter Gateelektrode. | |
DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
DE3381811D1 (de) | Feldeffekttransistor mit isoliertem gate mit einem gate aus silizium. | |
KR860006138A (ko) | 헤테로 접합 전계 효과 트랜지스터 | |
DE3889610D1 (de) | Halbleiteranordnung mit einem Trench-Bipolartransistor. | |
DE3787484T2 (de) | Verdrahtungsentwurf für bipolare und unipolare Transistoren mit isoliertem Gate. | |
DE3782748D1 (de) | Feldeffekttransistor mit isoliertem gate. | |
DE3579182D1 (de) | Halbleiteranordnung mit einem treiberschaltungselement und einem ausgangstransistor. | |
DE3785483T2 (de) | Halbleiteranordnung mit einem Bipolartransistor und Feldeffekttransistoren. | |
EP0184047A3 (en) | Field-effect transistor with self-aligned gate and method for its manufacture | |
DE3687494T3 (de) | Signalverarbeitungsanordnung mit einem Feldeffekttransistor und bipolaren Transistoren. | |
GB2162999B (en) | Manufacturing insulated gate field effect transistors | |
EP0338312A3 (en) | Insulated gate bipolar transistor | |
DE3686180T2 (de) | Vertikaler mos-transistor mit peripherer schaltung. | |
DE3481796D1 (de) | Feldeffekttransistor mit isolierter gateelektrode. | |
DE3671582D1 (de) | Halbleiteranordnung mit einem schutztransistor. | |
DE3677627D1 (de) | Halbleiteranordnung mit isoliertem gate. | |
DE3780895D1 (de) | Komplementaerer feldeffekt-transistor mit isoliertem gate. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |