SE8503048D0 - Forfarande och anordning for beskiktning av kvartsdeglar med skyddsskikt - Google Patents

Forfarande och anordning for beskiktning av kvartsdeglar med skyddsskikt

Info

Publication number
SE8503048D0
SE8503048D0 SE8503048A SE8503048A SE8503048D0 SE 8503048 D0 SE8503048 D0 SE 8503048D0 SE 8503048 A SE8503048 A SE 8503048A SE 8503048 A SE8503048 A SE 8503048A SE 8503048 D0 SE8503048 D0 SE 8503048D0
Authority
SE
Sweden
Prior art keywords
silicon
granules
survival
quarter
seals
Prior art date
Application number
SE8503048A
Other languages
English (en)
Other versions
SE8503048L (sv
Inventor
E Pinkhasov
Original Assignee
Wedtech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wedtech Corp filed Critical Wedtech Corp
Publication of SE8503048D0 publication Critical patent/SE8503048D0/sv
Publication of SE8503048L publication Critical patent/SE8503048L/sv

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SE8503048A 1984-06-29 1985-06-19 Forfarande och anordning for beskiktning av kvartsdeglar med skyddsskikt SE8503048L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/626,055 US4565711A (en) 1984-06-29 1984-06-29 Method of and apparatus for the coating of quartz crucibles with protective layers

Publications (2)

Publication Number Publication Date
SE8503048D0 true SE8503048D0 (sv) 1985-06-19
SE8503048L SE8503048L (sv) 1985-12-30

Family

ID=24508767

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8503048A SE8503048L (sv) 1984-06-29 1985-06-19 Forfarande och anordning for beskiktning av kvartsdeglar med skyddsskikt

Country Status (10)

Country Link
US (1) US4565711A (sv)
JP (1) JPS6183616A (sv)
CA (1) CA1247946A (sv)
CH (1) CH667107A5 (sv)
DE (1) DE3523090A1 (sv)
FR (1) FR2566805A1 (sv)
GB (1) GB2160899B (sv)
IL (1) IL75577A (sv)
IT (1) IT1185139B (sv)
SE (1) SE8503048L (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073241A (en) * 1986-01-31 1991-12-17 Kabushiki Kaisha Meidenshae Method for carbon film production
JP2531572B2 (ja) * 1993-08-09 1996-09-04 東芝セラミックス株式会社 石英ガラスの酸窒化方法および表面処理方法
DE4413423A1 (de) * 1994-04-18 1995-10-19 Paar Anton Kg Vorrichtung zum Aufschluß von Substanzen
US5993902A (en) * 1997-04-09 1999-11-30 Seh America, Inc. Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
US6221478B1 (en) 1997-07-24 2001-04-24 James Kammeyer Surface converted graphite components and methods of making same
AU2001288566A1 (en) 2000-11-15 2002-05-27 Gt Equipment Technologies Inc. A protective layer for quartz crucibles used for silicon crystallization
US20040187767A1 (en) * 2002-10-24 2004-09-30 Intel Corporation Device and method for multicrystalline silicon wafers
KR101140076B1 (ko) * 2007-08-23 2012-04-30 오브스체스트보 에스 오그라니체노이 오트베츠트벤노스츄 '솔라르 씨' 다결정 실리콘 제조 방법
US9221709B2 (en) * 2011-03-31 2015-12-29 Raytheon Company Apparatus for producing a vitreous inner layer on a fused silica body, and method of operating same
CN102432189B (zh) * 2011-09-20 2016-06-01 沈福茂 石英坩埚钡涂层的喷涂设备
CN111837221B (zh) * 2019-02-14 2024-03-05 株式会社日立高新技术 半导体制造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2665226A (en) * 1950-04-27 1954-01-05 Nat Res Corp Method and apparatus for vapor coating
US3036549A (en) * 1957-05-08 1962-05-29 Sumitomo Electric Industries Apparatus for vacuum evaporation of metals
GB939081A (en) * 1959-01-16 1963-10-09 Edwards High Vacuum Int Ltd Improvements in or relating to the evaporation of metal/metalloid mixtures
US3153137A (en) * 1961-10-13 1964-10-13 Union Carbide Corp Evaporation source
US3129315A (en) * 1961-12-26 1964-04-14 Lear Siegler Inc Vacuum vaporizing fixture
CH472509A (de) * 1965-07-09 1969-05-15 Ibm Verfahren zur Herstellung dünner Schichten von Chalkogeniden der Lanthaniden
DE1696614A1 (de) * 1967-05-13 1971-11-18 Telefunken Patent Verfahren zum Aufdampfen von Schichten auf einen Traegerkoerper
FR1588510A (sv) * 1968-07-08 1970-04-17

Also Published As

Publication number Publication date
JPH0114170B2 (sv) 1989-03-09
GB2160899A (en) 1986-01-02
GB2160899B (en) 1988-05-11
FR2566805A1 (fr) 1986-01-03
IL75577A (en) 1989-02-28
DE3523090A1 (de) 1986-01-09
CA1247946A (en) 1989-01-03
IT1185139B (it) 1987-11-04
SE8503048L (sv) 1985-12-30
GB8516267D0 (en) 1985-07-31
IT8521347A0 (it) 1985-06-28
JPS6183616A (ja) 1986-04-28
CH667107A5 (de) 1988-09-15
IL75577A0 (en) 1985-10-31
US4565711A (en) 1986-01-21

Similar Documents

Publication Publication Date Title
SE8503048L (sv) Forfarande och anordning for beskiktning av kvartsdeglar med skyddsskikt
GB940236A (en) Improvements in or relating to layers of semiconductor material
JPS5256872A (en) Semiconductive device and its production
SE8503405D0 (sv) Forfarande och anordning for smeltning och forangning av kisel
GB1263580A (en) Improvements in or relating to the production of a tubular body of a semiconductor material
JPS57202729A (en) Manufacture of semiconductor device
JPS54128277A (en) Semiconductor device
JPS55129741A (en) Detector for external atmosphere
US3409467A (en) Silicon carbide device
JPS57202726A (en) Manufacture of semiconductor device
Hartmann et al. Electrical conductivity of gadolinium–gallium garnet (GGG) crystals
KR880011888A (ko) 반도체장치의 제조방법
US3725147A (en) Method of alloying a monocrystal of a semiconductor
Datta Electrical conductivities of organic semiconductors(Impurity, surrounding gas and pressure effects on organic semiconducting material electrical conductivity, discussing carrier origin and number, and measurement techniques)
JPS5469964A (en) Production of semiconductor device
JPS5550650A (en) Semiconductor device
JPS5568057A (en) Electron gun
JPS645002A (en) Temperature detector
JPS57117261A (en) Package for semicondutor device
JPS6411379A (en) Superconducting film structure
JPS5253670A (en) Semiconductor device
JPS5350676A (en) Semiconductor device
JPS5623756A (en) Ceramic package and manufacture thereof
JPS57205395A (en) Manufacture of crystal substrate
JPS53145567A (en) Semiconductor device

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 8503048-4

Effective date: 19900531

Format of ref document f/p: F