SE8300853L - Tvapoligt overstromsskydd - Google Patents

Tvapoligt overstromsskydd

Info

Publication number
SE8300853L
SE8300853L SE8300853A SE8300853A SE8300853L SE 8300853 L SE8300853 L SE 8300853L SE 8300853 A SE8300853 A SE 8300853A SE 8300853 A SE8300853 A SE 8300853A SE 8300853 L SE8300853 L SE 8300853L
Authority
SE
Sweden
Prior art keywords
thyristor
current
transistor
transistor portion
firing
Prior art date
Application number
SE8300853A
Other languages
Unknown language ( )
English (en)
Other versions
SE435436B (sv
SE8300853D0 (sv
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE8300853A priority Critical patent/SE435436B/sv
Publication of SE8300853D0 publication Critical patent/SE8300853D0/sv
Priority to US06/578,383 priority patent/US4546401A/en
Priority to EP84101454A priority patent/EP0118785B1/de
Priority to DE8484101454T priority patent/DE3463988D1/de
Priority to JP59025949A priority patent/JPS59155964A/ja
Publication of SE8300853L publication Critical patent/SE8300853L/sv
Publication of SE435436B publication Critical patent/SE435436B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
SE8300853A 1983-01-16 1983-02-16 Tvapoligt overstromsskydd SE435436B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8300853A SE435436B (sv) 1983-02-16 1983-02-16 Tvapoligt overstromsskydd
US06/578,383 US4546401A (en) 1983-01-16 1984-02-08 Two-pole overcurrent protection device
EP84101454A EP0118785B1 (de) 1983-02-16 1984-02-13 Zweipoliger Überstromschutz
DE8484101454T DE3463988D1 (en) 1983-02-16 1984-02-13 Two-pole overcurrent protection
JP59025949A JPS59155964A (ja) 1983-02-16 1984-02-14 過電流保護装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8300853A SE435436B (sv) 1983-02-16 1983-02-16 Tvapoligt overstromsskydd

Publications (3)

Publication Number Publication Date
SE8300853D0 SE8300853D0 (sv) 1983-02-16
SE8300853L true SE8300853L (sv) 1984-08-17
SE435436B SE435436B (sv) 1984-09-24

Family

ID=20350065

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8300853A SE435436B (sv) 1983-01-16 1983-02-16 Tvapoligt overstromsskydd

Country Status (5)

Country Link
US (1) US4546401A (sv)
EP (1) EP0118785B1 (sv)
JP (1) JPS59155964A (sv)
DE (1) DE3463988D1 (sv)
SE (1) SE435436B (sv)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUT42204A (en) * 1984-05-02 1987-06-29 Int Standard Electric Corp Semiconductor device and arrangement
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
FR2584237B1 (fr) * 1985-06-28 1987-08-07 Telemecanique Electrique Dispositif integre mos-bipolaire normalement passant
EP0230278A3 (de) * 1986-01-24 1989-09-06 Siemens Aktiengesellschaft Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
JPS63198525A (ja) * 1987-02-12 1988-08-17 三菱電機株式会社 過電圧保護装置
US4799126A (en) * 1987-04-16 1989-01-17 Navistar International Transportation Corp. Overload protection for D.C. circuits
US4811156A (en) * 1988-02-26 1989-03-07 Cherne Medical, Inc. Medical current limiter
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
US4924344A (en) * 1989-02-27 1990-05-08 Teledyne Industries, Inc. Circuitry for protection against electromotively-induced voltage transients in solid state relay circuits
US4931778A (en) * 1989-02-27 1990-06-05 Teledyne Industries, Inc. Circuitry for indicating the presence of an overload or short circuit in solid state relay circuits
US4916572A (en) * 1989-02-27 1990-04-10 Teledyne Industries, Inc. Circuitry for protecting against load voltage transients in solid state relay circuits
JPH03253078A (ja) * 1989-12-21 1991-11-12 Asea Brown Boveri Ag 遮断可能なパワー半導体素子
FR2683947B1 (fr) * 1991-11-18 1994-02-18 Sgs Thomson Microelectronics Sa Diode de protection monolithique basse tension a faible capacite.
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
JP3983285B2 (ja) * 1994-12-20 2007-09-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ 供給電圧により負荷を動作させる回路
US5761019A (en) * 1996-01-11 1998-06-02 L.Vad Technology, Inc. Medical current limiter
FR2754392B1 (fr) * 1996-10-04 1999-04-30 Centre Nat Rech Scient Thyristor dual normalement passant blocable par une impulsion appliquee sur la gachette
DE19726678A1 (de) * 1997-06-24 1999-01-07 Siemens Ag Passiver Halbleiterstrombegrenzer
US5962878A (en) * 1997-09-17 1999-10-05 Citizen Watch Co., Ltd. Surge protection device and method of fabricating the same
US5995348A (en) * 1997-09-19 1999-11-30 Acuson Corporation Ground safety device for medical ultrasound probes
US6271067B1 (en) * 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
EP1656721A4 (en) * 2003-08-21 2008-05-07 Fultec Pty Ltd INTEGRATED ELECTRONIC DISCONNECT CIRCUITS, ASSOCIATED METHODS AND SYSTEMS
US7276883B2 (en) * 2004-08-12 2007-10-02 International Rectifier Corporation Self-driven synchronous rectified boost converter with inrush current protection using bidirectional normally on device
US7355368B2 (en) * 2004-08-12 2008-04-08 International Rectifier Corporation Efficient in-rush current limiting circuit with dual gated bidirectional hemts
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263128A (en) * 1962-07-23 1966-07-26 Richard L White Circuit breaker
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
DE2248005C3 (de) * 1971-10-01 1979-09-27 Hitachi, Ltd., Tokio Unidirektionaler gesteuerter Halbleitergleichrichter
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
US4268846A (en) * 1978-12-22 1981-05-19 Eaton Corporation Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device

Also Published As

Publication number Publication date
EP0118785B1 (de) 1987-05-27
SE435436B (sv) 1984-09-24
SE8300853D0 (sv) 1983-02-16
DE3463988D1 (en) 1987-07-02
EP0118785A1 (de) 1984-09-19
JPS59155964A (ja) 1984-09-05
US4546401A (en) 1985-10-08

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