SE7901087L - Halvledare - Google Patents

Halvledare

Info

Publication number
SE7901087L
SE7901087L SE7901087A SE7901087A SE7901087L SE 7901087 L SE7901087 L SE 7901087L SE 7901087 A SE7901087 A SE 7901087A SE 7901087 A SE7901087 A SE 7901087A SE 7901087 L SE7901087 L SE 7901087L
Authority
SE
Sweden
Prior art keywords
functional portions
semiconductor
contact surfaces
portions
wafer
Prior art date
Application number
SE7901087A
Other languages
Unknown language ( )
English (en)
Swedish (sv)
Inventor
H Schefer
W Tursky
H-J Fuchs
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of SE7901087L publication Critical patent/SE7901087L/

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
SE7901087A 1978-02-11 1979-02-07 Halvledare SE7901087L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782805813 DE2805813C3 (de) 1978-02-11 1978-02-11 l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE

Publications (1)

Publication Number Publication Date
SE7901087L true SE7901087L (sv) 1979-08-12

Family

ID=6031706

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7901087A SE7901087L (sv) 1978-02-11 1979-02-07 Halvledare

Country Status (5)

Country Link
JP (1) JPS54114985A (de)
BR (1) BR7900858A (de)
DE (1) DE2805813C3 (de)
GB (1) GB2014364B (de)
SE (1) SE7901087L (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3069980D1 (en) 1979-10-12 1985-02-28 William James Cunliffe Antibiotic substances, a process for the preparation and compositions thereof; a new strain of staphylococcus epidermidis which produces the said antibiotic substance and compositions thereof
DE3046134C2 (de) * 1980-12-06 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisch zündbarer Zweirichtungs-Thyristor
GB2097328B (en) * 1981-04-24 1984-09-05 Glaverbel Laminated reflective panels
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JP2008091705A (ja) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
DE2261666A1 (de) * 1972-12-16 1974-06-20 Semikron Gleichrichterbau Zweirichtungs-thyristor
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS51139280A (en) * 1975-05-27 1976-12-01 Mitsubishi Electric Corp Semi-conductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS54114985A (en) 1979-09-07
DE2805813B2 (de) 1980-04-30
GB2014364B (en) 1982-08-25
GB2014364A (en) 1979-08-22
DE2805813A1 (de) 1979-08-16
BR7900858A (pt) 1979-09-04
DE2805813C3 (de) 1984-02-23

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