JPS54114985A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS54114985A JPS54114985A JP1150179A JP1150179A JPS54114985A JP S54114985 A JPS54114985 A JP S54114985A JP 1150179 A JP1150179 A JP 1150179A JP 1150179 A JP1150179 A JP 1150179A JP S54114985 A JPS54114985 A JP S54114985A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782805813 DE2805813C3 (de) | 1978-02-11 | 1978-02-11 | l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54114985A true JPS54114985A (en) | 1979-09-07 |
Family
ID=6031706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1150179A Pending JPS54114985A (en) | 1978-02-11 | 1979-02-05 | Semiconductor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS54114985A (de) |
BR (1) | BR7900858A (de) |
DE (1) | DE2805813C3 (de) |
GB (1) | GB2014364B (de) |
SE (1) | SE7901087L (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1981000962A1 (en) | 1979-10-12 | 1981-04-16 | Boehringer Sohn Ingelheim | Antibiotic compounds,process for the preparation and pharmaceutical compositions thereof,methods of treatment therewith and staphylococcus bacteria |
DE3046134C2 (de) * | 1980-12-06 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optisch zündbarer Zweirichtungs-Thyristor |
GB2097328B (en) * | 1981-04-24 | 1984-09-05 | Glaverbel | Laminated reflective panels |
JPS6074677A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 複合型サイリスタ |
JP2008091705A (ja) * | 2006-10-03 | 2008-04-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5017587A (de) * | 1973-05-04 | 1975-02-24 | ||
JPS51139280A (en) * | 1975-05-27 | 1976-12-01 | Mitsubishi Electric Corp | Semi-conductor device and method of manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
DE2261666A1 (de) * | 1972-12-16 | 1974-06-20 | Semikron Gleichrichterbau | Zweirichtungs-thyristor |
US4238761A (en) * | 1975-05-27 | 1980-12-09 | Westinghouse Electric Corp. | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
-
1978
- 1978-02-11 DE DE19782805813 patent/DE2805813C3/de not_active Expired
-
1979
- 1979-02-05 JP JP1150179A patent/JPS54114985A/ja active Pending
- 1979-02-07 SE SE7901087A patent/SE7901087L/ not_active Application Discontinuation
- 1979-02-09 BR BR7900858A patent/BR7900858A/pt unknown
- 1979-02-12 GB GB7904807A patent/GB2014364B/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5017587A (de) * | 1973-05-04 | 1975-02-24 | ||
JPS51139280A (en) * | 1975-05-27 | 1976-12-01 | Mitsubishi Electric Corp | Semi-conductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
DE2805813C3 (de) | 1984-02-23 |
BR7900858A (pt) | 1979-09-04 |
DE2805813B2 (de) | 1980-04-30 |
GB2014364A (en) | 1979-08-22 |
DE2805813A1 (de) | 1979-08-16 |
GB2014364B (en) | 1982-08-25 |
SE7901087L (sv) | 1979-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54109780A (en) | Semiconductor | |
JPS54129886A (en) | Semiconductor | |
GB2034520B (en) | Semiconductor assembly | |
GB2019091B (en) | Semiconductor store | |
JPS54152881A (en) | Semiconductor device | |
GB2029103B (en) | Mos-integrated semiconductor store | |
GB2020489B (en) | Semi-conductor arrangement | |
JPS54141592A (en) | Semiconductor device | |
GB2018511B (en) | Semiconductor device | |
JPS54114987A (en) | Semiconductor | |
JPS5555554A (en) | Semiconductor element | |
JPS54158877A (en) | Semiconductor device | |
GB2038088B (en) | Semiconductor structures | |
GB2026240B (en) | Semiconductor devices | |
GB2027272B (en) | Semiconductor devices | |
GB2014364B (en) | Semiconductor arrangement | |
GB2064869B (en) | Semiconductor device | |
JPS54153562A (en) | Semiconductor device | |
JPS55105355A (en) | Semiconductor element | |
JPS54115083A (en) | Semiconductor | |
JPS54123880A (en) | Semiconductor | |
JPS54105463A (en) | Semiconductor | |
JPS54128673A (en) | Semiconductor | |
JPS5452479A (en) | Semiconductor | |
GB2014363B (en) | Semiconductor devices |