SE7702883L - Minskning av omkopplingstiden hos halvledaranordningar medelst nukleer bestralning - Google Patents
Minskning av omkopplingstiden hos halvledaranordningar medelst nukleer bestralningInfo
- Publication number
- SE7702883L SE7702883L SE7702883A SE7702883A SE7702883L SE 7702883 L SE7702883 L SE 7702883L SE 7702883 A SE7702883 A SE 7702883A SE 7702883 A SE7702883 A SE 7702883A SE 7702883 L SE7702883 L SE 7702883L
- Authority
- SE
- Sweden
- Prior art keywords
- junction
- semiconductor device
- radiation source
- semiconductor devices
- switching time
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 11
- 230000005855 radiation Effects 0.000 abstract 5
- 230000000903 blocking effect Effects 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/667,791 US4056408A (en) | 1976-03-17 | 1976-03-17 | Reducing the switching time of semiconductor devices by nuclear irradiation |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7702883L true SE7702883L (sv) | 1977-09-18 |
Family
ID=24679658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7702883A SE7702883L (sv) | 1976-03-17 | 1977-03-15 | Minskning av omkopplingstiden hos halvledaranordningar medelst nukleer bestralning |
Country Status (12)
Country | Link |
---|---|
US (1) | US4056408A (de) |
JP (1) | JPS52113686A (de) |
AU (1) | AU509289B2 (de) |
BE (1) | BE852514A (de) |
CA (1) | CA1081863A (de) |
DE (1) | DE2711361A1 (de) |
FR (1) | FR2344962A1 (de) |
GB (1) | GB1574658A (de) |
IN (1) | IN147292B (de) |
NL (1) | NL187508C (de) |
SE (1) | SE7702883L (de) |
ZA (1) | ZA771188B (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
DE2627855A1 (de) * | 1976-06-22 | 1977-12-29 | Siemens Ag | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
US4259683A (en) * | 1977-02-07 | 1981-03-31 | General Electric Company | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
JPS53110483A (en) * | 1977-03-09 | 1978-09-27 | Hitachi Ltd | Thyristor |
US4137099A (en) * | 1977-07-11 | 1979-01-30 | General Electric Company | Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments |
US4292644A (en) * | 1977-08-26 | 1981-09-29 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
US4113514A (en) * | 1978-01-16 | 1978-09-12 | Rca Corporation | Method of passivating a semiconductor device by treatment with atomic hydrogen |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4278475A (en) * | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
US4230791A (en) * | 1979-04-02 | 1980-10-28 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
US4318750A (en) * | 1979-12-28 | 1982-03-09 | Westinghouse Electric Corp. | Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects |
IN152079B (de) * | 1980-01-09 | 1983-10-08 | Westinghouse Electric Corp | |
US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
JPS60207376A (ja) * | 1984-03-31 | 1985-10-18 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタおよびその製造方法 |
US4620211A (en) * | 1984-08-13 | 1986-10-28 | General Electric Company | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
US4752818A (en) * | 1985-09-28 | 1988-06-21 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor device with multiple recombination center layers |
JPS6276556A (ja) * | 1985-09-28 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタ |
JP2604580B2 (ja) * | 1986-10-01 | 1997-04-30 | 三菱電機株式会社 | アノード短絡形ゲートターンオフサイリスタ |
JPS649658A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Gto thyristor |
JPH0722198B2 (ja) * | 1987-07-15 | 1995-03-08 | 富士電機株式会社 | 絶縁ゲ−ト形バイポ−ラトランジスタ |
US5510274A (en) * | 1987-08-19 | 1996-04-23 | Mitsubishi Denki Kabushiki Kaisha | Method of controlling a carrier lifetime in a semiconductor switching device |
GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
DE59003052D1 (de) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Halbleiterbauelement. |
US5284780A (en) * | 1989-09-28 | 1994-02-08 | Siemens Aktiengesellschaft | Method for increasing the electric strength of a multi-layer semiconductor component |
US5243205A (en) * | 1989-10-16 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device with overvoltage protective function |
US5554883A (en) * | 1990-04-28 | 1996-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US5247230A (en) * | 1992-06-02 | 1993-09-21 | Lucerne Products, Inc. | Unilateral diac for motor speed control |
DE4421529C2 (de) * | 1994-06-20 | 1996-04-18 | Semikron Elektronik Gmbh | Schnelle Leistungsdiode |
JP3869466B2 (ja) * | 1995-07-03 | 2007-01-17 | シーメンス アクチエンゲゼルシヤフト | 改善されたスイッチオンオフ特性を有するサイリスタ及びその製造方法 |
JP3394383B2 (ja) * | 1996-03-18 | 2003-04-07 | 三菱電機株式会社 | サイリスタの製造方法およびサイリスタ |
WO1998015010A1 (de) | 1996-09-30 | 1998-04-09 | Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg | Thyristor mit durchbruchbereich |
DE19650762A1 (de) * | 1996-09-30 | 1998-07-02 | Eupec Gmbh & Co Kg | Thyristor mit Durchbruchbereich |
DE19649800A1 (de) * | 1996-12-02 | 1998-06-04 | Asea Brown Boveri | Verfahren zur Herstellung eines Abschaltthyristors mit einer anodenseitigen Stopschicht und einem transparenten Anodenemitter |
US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
JP4775539B2 (ja) * | 2005-03-22 | 2011-09-21 | サンケン電気株式会社 | 半導体装置の製法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
JPS4837232B1 (de) * | 1968-12-04 | 1973-11-09 | ||
JPS5226433B2 (de) * | 1971-09-18 | 1977-07-14 | ||
US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
US3877997A (en) * | 1973-03-20 | 1975-04-15 | Westinghouse Electric Corp | Selective irradiation for fast switching thyristor with low forward voltage drop |
-
1976
- 1976-03-17 US US05/667,791 patent/US4056408A/en not_active Expired - Lifetime
-
1977
- 1977-02-28 ZA ZA00771188A patent/ZA771188B/xx unknown
- 1977-03-02 IN IN307/CAL/77A patent/IN147292B/en unknown
- 1977-03-08 CA CA273,492A patent/CA1081863A/en not_active Expired
- 1977-03-09 GB GB9859/77A patent/GB1574658A/en not_active Expired
- 1977-03-10 AU AU23128/77A patent/AU509289B2/en not_active Expired
- 1977-03-15 NL NLAANVRAGE7702755,A patent/NL187508C/xx not_active IP Right Cessation
- 1977-03-15 SE SE7702883A patent/SE7702883L/xx not_active Application Discontinuation
- 1977-03-16 BE BE175822A patent/BE852514A/xx not_active IP Right Cessation
- 1977-03-16 DE DE19772711361 patent/DE2711361A1/de active Granted
- 1977-03-17 FR FR7708025A patent/FR2344962A1/fr active Granted
- 1977-03-17 JP JP2875077A patent/JPS52113686A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
AU2312877A (en) | 1978-09-14 |
DE2711361A1 (de) | 1977-09-22 |
NL187508C (nl) | 1991-10-16 |
GB1574658A (en) | 1980-09-10 |
FR2344962A1 (fr) | 1977-10-14 |
CA1081863A (en) | 1980-07-15 |
US4056408A (en) | 1977-11-01 |
NL7702755A (nl) | 1977-09-20 |
JPS52113686A (en) | 1977-09-22 |
AU509289B2 (en) | 1980-05-01 |
NL187508B (nl) | 1991-05-16 |
ZA771188B (en) | 1978-01-25 |
DE2711361C2 (de) | 1988-06-16 |
BE852514A (fr) | 1977-09-16 |
IN147292B (de) | 1980-01-19 |
FR2344962B1 (de) | 1984-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 7702883-5 |