SE523899C2 - Halvledaranordning - Google Patents
HalvledaranordningInfo
- Publication number
- SE523899C2 SE523899C2 SE9901345A SE9901345A SE523899C2 SE 523899 C2 SE523899 C2 SE 523899C2 SE 9901345 A SE9901345 A SE 9901345A SE 9901345 A SE9901345 A SE 9901345A SE 523899 C2 SE523899 C2 SE 523899C2
- Authority
- SE
- Sweden
- Prior art keywords
- type
- voltage transistor
- voltage
- low
- mos
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 101150012579 ADSL gene Proteins 0.000 description 1
- 102100020775 Adenylosuccinate lyase Human genes 0.000 description 1
- 108700040193 Adenylosuccinate lyases Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9901345A SE523899C2 (sv) | 1999-04-15 | 1999-04-15 | Halvledaranordning |
| TW088107142A TW452968B (en) | 1999-04-15 | 1999-05-03 | CMOS process |
| US09/549,948 US20020098636A1 (en) | 1999-04-15 | 2000-04-14 | Cmos process |
| JP2000612997A JP2002542625A (ja) | 1999-04-15 | 2000-04-17 | Ｃｍｏｓプロセス |
| CA002396377A CA2396377A1 (en) | 1999-04-15 | 2000-04-17 | Cmos process |
| KR1020017013156A KR20010110764A (ko) | 1999-04-15 | 2000-04-17 | Ｃｍｏｓ 공정 |
| EP00925824A EP1186018A2 (en) | 1999-04-15 | 2000-04-17 | Cmos process |
| AU44453/00A AU4445300A (en) | 1999-04-15 | 2000-04-17 | Cmos process |
| PCT/SE2000/000731 WO2000063964A2 (en) | 1999-04-15 | 2000-04-17 | Cmos process |
| CNB008088616A CN1175478C (zh) | 1999-04-15 | 2000-04-17 | 一种晶体管装置 |
| US09/818,710 US6492671B2 (en) | 1999-04-15 | 2001-03-28 | CMOS process |
| HK02109180.9A HK1047656A1 (zh) | 1999-04-15 | 2002-12-18 | Cmos處理過程 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9901345A SE523899C2 (sv) | 1999-04-15 | 1999-04-15 | Halvledaranordning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9901345D0 SE9901345D0 (sv) | 1999-04-15 |
| SE9901345L SE9901345L (sv) | 2000-10-16 |
| SE523899C2 true SE523899C2 (sv) | 2004-06-01 |
Family
ID=20415223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9901345A SE523899C2 (sv) | 1999-04-15 | 1999-04-15 | Halvledaranordning |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US20020098636A1 (zh) |
| EP (1) | EP1186018A2 (zh) |
| JP (1) | JP2002542625A (zh) |
| KR (1) | KR20010110764A (zh) |
| CN (1) | CN1175478C (zh) |
| AU (1) | AU4445300A (zh) |
| CA (1) | CA2396377A1 (zh) |
| HK (1) | HK1047656A1 (zh) |
| SE (1) | SE523899C2 (zh) |
| TW (1) | TW452968B (zh) |
| WO (1) | WO2000063964A2 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6710424B2 (en) | 2001-09-21 | 2004-03-23 | Airip | RF chipset architecture |
| JP2003324159A (ja) * | 2002-04-26 | 2003-11-14 | Ricoh Co Ltd | 半導体装置 |
| CN100419998C (zh) * | 2006-12-04 | 2008-09-17 | 中国电子科技集团公司第二十四研究所 | 一种cmos型低压差电压调整器集成电路的制造方法 |
| KR102219291B1 (ko) | 2014-11-25 | 2021-02-23 | 삼성전자 주식회사 | 반도체 소자 제조 방법 |
| US20170018612A1 (en) * | 2015-07-14 | 2017-01-19 | Broadcom Corporation | Split-gate devices |
| KR102475451B1 (ko) * | 2018-08-29 | 2022-12-08 | 주식회사 디비하이텍 | 반도체 소자의 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113585A (ja) * | 1983-11-24 | 1985-06-20 | Citizen Watch Co Ltd | 同期信号発生回路 |
| FR2571178B1 (fr) * | 1984-09-28 | 1986-11-21 | Thomson Csf | Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication |
| US5047358A (en) * | 1989-03-17 | 1991-09-10 | Delco Electronics Corporation | Process for forming high and low voltage CMOS transistors on a single integrated circuit chip |
| JP2861624B2 (ja) * | 1992-05-13 | 1999-02-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5472887A (en) * | 1993-11-09 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating semiconductor device having high-and low-voltage MOS transistors |
| US5498554A (en) * | 1994-04-08 | 1996-03-12 | Texas Instruments Incorporated | Method of making extended drain resurf lateral DMOS devices |
| US5880502A (en) * | 1996-09-06 | 1999-03-09 | Micron Display Technology, Inc. | Low and high voltage CMOS devices and process for fabricating same |
-
1999
- 1999-04-15 SE SE9901345A patent/SE523899C2/sv unknown
- 1999-05-03 TW TW088107142A patent/TW452968B/zh active
-
2000
- 2000-04-14 US US09/549,948 patent/US20020098636A1/en not_active Abandoned
- 2000-04-17 WO PCT/SE2000/000731 patent/WO2000063964A2/en not_active Application Discontinuation
- 2000-04-17 AU AU44453/00A patent/AU4445300A/en not_active Abandoned
- 2000-04-17 CA CA002396377A patent/CA2396377A1/en not_active Abandoned
- 2000-04-17 KR KR1020017013156A patent/KR20010110764A/ko not_active Application Discontinuation
- 2000-04-17 CN CNB008088616A patent/CN1175478C/zh not_active Expired - Fee Related
- 2000-04-17 EP EP00925824A patent/EP1186018A2/en not_active Withdrawn
- 2000-04-17 JP JP2000612997A patent/JP2002542625A/ja active Pending
-
2001
- 2001-03-28 US US09/818,710 patent/US6492671B2/en not_active Expired - Lifetime
-
2002
- 2002-12-18 HK HK02109180.9A patent/HK1047656A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE9901345L (sv) | 2000-10-16 |
| CN1355933A (zh) | 2002-06-26 |
| CN1175478C (zh) | 2004-11-10 |
| CA2396377A1 (en) | 2000-10-26 |
| SE9901345D0 (sv) | 1999-04-15 |
| KR20010110764A (ko) | 2001-12-13 |
| US20020098636A1 (en) | 2002-07-25 |
| AU4445300A (en) | 2000-11-02 |
| WO2000063964A3 (en) | 2001-01-18 |
| TW452968B (en) | 2001-09-01 |
| US6492671B2 (en) | 2002-12-10 |
| JP2002542625A (ja) | 2002-12-10 |
| WO2000063964A2 (en) | 2000-10-26 |
| EP1186018A2 (en) | 2002-03-13 |
| WO2000063964B1 (en) | 2001-03-22 |
| HK1047656A1 (zh) | 2003-02-28 |
| US20010014497A1 (en) | 2001-08-16 |
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