HK1047656A1 - Cmos處理過程 - Google Patents

Cmos處理過程

Info

Publication number
HK1047656A1
HK1047656A1 HK02109180.9A HK02109180A HK1047656A1 HK 1047656 A1 HK1047656 A1 HK 1047656A1 HK 02109180 A HK02109180 A HK 02109180A HK 1047656 A1 HK1047656 A1 HK 1047656A1
Authority
HK
Hong Kong
Prior art keywords
cmos process
cmos
Prior art date
Application number
HK02109180.9A
Other languages
English (en)
Inventor
Soderbarg Anders
Original Assignee
艾利森電話股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾利森電話股份有限公司 filed Critical 艾利森電話股份有限公司
Publication of HK1047656A1 publication Critical patent/HK1047656A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK02109180.9A 1999-04-15 2002-12-18 Cmos處理過程 HK1047656A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9901345A SE523899C2 (sv) 1999-04-15 1999-04-15 Halvledaranordning
PCT/SE2000/000731 WO2000063964A2 (en) 1999-04-15 2000-04-17 Cmos process

Publications (1)

Publication Number Publication Date
HK1047656A1 true HK1047656A1 (zh) 2003-02-28

Family

ID=20415223

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02109180.9A HK1047656A1 (zh) 1999-04-15 2002-12-18 Cmos處理過程

Country Status (11)

Country Link
US (2) US20020098636A1 (zh)
EP (1) EP1186018A2 (zh)
JP (1) JP2002542625A (zh)
KR (1) KR20010110764A (zh)
CN (1) CN1175478C (zh)
AU (1) AU4445300A (zh)
CA (1) CA2396377A1 (zh)
HK (1) HK1047656A1 (zh)
SE (1) SE523899C2 (zh)
TW (1) TW452968B (zh)
WO (1) WO2000063964A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
JP2003324159A (ja) * 2002-04-26 2003-11-14 Ricoh Co Ltd 半導体装置
CN100419998C (zh) * 2006-12-04 2008-09-17 中国电子科技集团公司第二十四研究所 一种cmos型低压差电压调整器集成电路的制造方法
KR102219291B1 (ko) 2014-11-25 2021-02-23 삼성전자 주식회사 반도체 소자 제조 방법
US20170018612A1 (en) * 2015-07-14 2017-01-19 Broadcom Corporation Split-gate devices
KR102475451B1 (ko) * 2018-08-29 2022-12-08 주식회사 디비하이텍 반도체 소자의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113585A (ja) * 1983-11-24 1985-06-20 Citizen Watch Co Ltd 同期信号発生回路
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
JP2861624B2 (ja) * 1992-05-13 1999-02-24 日本電気株式会社 半導体装置の製造方法
US5472887A (en) * 1993-11-09 1995-12-05 Texas Instruments Incorporated Method of fabricating semiconductor device having high-and low-voltage MOS transistors
US5498554A (en) * 1994-04-08 1996-03-12 Texas Instruments Incorporated Method of making extended drain resurf lateral DMOS devices
US5880502A (en) * 1996-09-06 1999-03-09 Micron Display Technology, Inc. Low and high voltage CMOS devices and process for fabricating same

Also Published As

Publication number Publication date
SE9901345L (sv) 2000-10-16
CN1355933A (zh) 2002-06-26
CN1175478C (zh) 2004-11-10
CA2396377A1 (en) 2000-10-26
SE9901345D0 (sv) 1999-04-15
KR20010110764A (ko) 2001-12-13
US20020098636A1 (en) 2002-07-25
AU4445300A (en) 2000-11-02
WO2000063964A3 (en) 2001-01-18
TW452968B (en) 2001-09-01
SE523899C2 (sv) 2004-06-01
US6492671B2 (en) 2002-12-10
JP2002542625A (ja) 2002-12-10
WO2000063964A2 (en) 2000-10-26
EP1186018A2 (en) 2002-03-13
WO2000063964B1 (en) 2001-03-22
US20010014497A1 (en) 2001-08-16

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