SE516012C2 - Styreförspänningsanordning - Google Patents

Styreförspänningsanordning

Info

Publication number
SE516012C2
SE516012C2 SE9900210A SE9900210A SE516012C2 SE 516012 C2 SE516012 C2 SE 516012C2 SE 9900210 A SE9900210 A SE 9900210A SE 9900210 A SE9900210 A SE 9900210A SE 516012 C2 SE516012 C2 SE 516012C2
Authority
SE
Sweden
Prior art keywords
transistor
power transistor
bias
collector
current
Prior art date
Application number
SE9900210A
Other languages
English (en)
Swedish (sv)
Other versions
SE9900210L (sv
SE9900210D0 (sv
Inventor
Jan Johansson
Nils Af Ekenstam
Per Ericsson
Henrik Sjoeden
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9900210A priority Critical patent/SE516012C2/sv
Publication of SE9900210D0 publication Critical patent/SE9900210D0/xx
Priority to TW088102938A priority patent/TW427026B/zh
Priority to CNB998158240A priority patent/CN1196252C/zh
Priority to CA002359679A priority patent/CA2359679A1/fr
Priority to KR1020017008749A priority patent/KR100580748B1/ko
Priority to DE69934828T priority patent/DE69934828T2/de
Priority to PCT/SE1999/002504 priority patent/WO2000044089A1/fr
Priority to AU23349/00A priority patent/AU2334900A/en
Priority to JP2000595421A priority patent/JP2002535907A/ja
Priority to EP99967050A priority patent/EP1153475B1/fr
Priority to US09/489,947 priority patent/US6288596B1/en
Publication of SE9900210L publication Critical patent/SE9900210L/xx
Publication of SE516012C2 publication Critical patent/SE516012C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
SE9900210A 1999-01-25 1999-01-25 Styreförspänningsanordning SE516012C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9900210A SE516012C2 (sv) 1999-01-25 1999-01-25 Styreförspänningsanordning
TW088102938A TW427026B (en) 1999-01-25 1999-02-26 Gate biasing arrangement
EP99967050A EP1153475B1 (fr) 1999-01-25 1999-12-30 Ensemble polarisation de la grille
KR1020017008749A KR100580748B1 (ko) 1999-01-25 1999-12-30 게이트 바이어싱 장치
CA002359679A CA2359679A1 (fr) 1999-01-25 1999-12-30 Ensemble polarisation de la grille
CNB998158240A CN1196252C (zh) 1999-01-25 1999-12-30 栅极偏置结构
DE69934828T DE69934828T2 (de) 1999-01-25 1999-12-30 Gate-vorspannungsvorrichtung
PCT/SE1999/002504 WO2000044089A1 (fr) 1999-01-25 1999-12-30 Ensemble polarisation de la grille
AU23349/00A AU2334900A (en) 1999-01-25 1999-12-30 Gate biasing arrangement
JP2000595421A JP2002535907A (ja) 1999-01-25 1999-12-30 ゲートバイアス装置
US09/489,947 US6288596B1 (en) 1999-01-25 2000-01-24 Gate biasing arrangement to temperature compensate a quiescent current of a power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9900210A SE516012C2 (sv) 1999-01-25 1999-01-25 Styreförspänningsanordning

Publications (3)

Publication Number Publication Date
SE9900210D0 SE9900210D0 (sv) 1999-01-25
SE9900210L SE9900210L (sv) 2000-07-26
SE516012C2 true SE516012C2 (sv) 2001-11-05

Family

ID=20414206

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900210A SE516012C2 (sv) 1999-01-25 1999-01-25 Styreförspänningsanordning

Country Status (11)

Country Link
US (1) US6288596B1 (fr)
EP (1) EP1153475B1 (fr)
JP (1) JP2002535907A (fr)
KR (1) KR100580748B1 (fr)
CN (1) CN1196252C (fr)
AU (1) AU2334900A (fr)
CA (1) CA2359679A1 (fr)
DE (1) DE69934828T2 (fr)
SE (1) SE516012C2 (fr)
TW (1) TW427026B (fr)
WO (1) WO2000044089A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452370B1 (en) * 2001-11-13 2002-09-17 Agilent Technologies, Inc. Low noise biasing technique
US6600301B1 (en) * 2002-04-30 2003-07-29 Raytheon Company Current shutdown circuit for active bias circuit having process variation compensation
WO2004040750A1 (fr) 2002-10-30 2004-05-13 Koninklijke Philips Electronics N.V. Circuit de polarisation d'amplificateur, procede de polarisation d'un amplificateur et circuit integre comprenant un circuit de polarisation d'amplificateur
US6956437B2 (en) * 2003-12-23 2005-10-18 Agere Systems Inc. Metal-oxide-semiconductor device having integrated bias circuit
US7034618B2 (en) 2004-03-09 2006-04-25 Nokia Corporation Temperature compensating circuit
KR100794774B1 (ko) * 2004-03-09 2008-01-21 노키아 코포레이션 온도 보상 회로
US7255476B2 (en) * 2004-04-14 2007-08-14 International Business Machines Corporation On chip temperature measuring and monitoring circuit and method
US7489191B2 (en) 2007-06-08 2009-02-10 General Electric Company Circuit and method for reducing bias noise in amplifier circuits
JP5124292B2 (ja) * 2008-01-10 2013-01-23 ルネサスエレクトロニクス株式会社 電力スイッチ回路
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772429A (en) * 1980-10-22 1982-05-06 Toshiba Corp Semiconductor integrated circuit device
FR2649841B1 (fr) * 1989-07-17 1994-10-14 Sgs Thomson Microelectronics Circuit de commande de grille d'un transistor mos
US5045822A (en) * 1990-04-10 1991-09-03 Pacific Monolithics Active power splitter
US5027082A (en) * 1990-05-01 1991-06-25 Microwave Modules & Devices, Inc. Solid state RF power amplifier having improved efficiency and reduced distortion
EP0854568B1 (fr) * 1993-01-08 2001-05-30 Sony Corporation Circuit intégré monolithique à micro-ondes
US5808496A (en) * 1993-05-19 1998-09-15 Texas Instruments Incorporated Low current comparator with hysteresis
JPH0946141A (ja) * 1995-07-27 1997-02-14 Nec Eng Ltd バイアス回路
US6150852A (en) * 1999-01-14 2000-11-21 Qualcomm Incorporated Active differential to single-ended converter

Also Published As

Publication number Publication date
KR20010108087A (ko) 2001-12-07
US6288596B1 (en) 2001-09-11
DE69934828T2 (de) 2007-08-16
EP1153475B1 (fr) 2007-01-10
JP2002535907A (ja) 2002-10-22
SE9900210L (sv) 2000-07-26
DE69934828D1 (de) 2007-02-22
KR100580748B1 (ko) 2006-05-15
SE9900210D0 (sv) 1999-01-25
CN1333944A (zh) 2002-01-30
EP1153475A1 (fr) 2001-11-14
TW427026B (en) 2001-03-21
AU2334900A (en) 2000-08-07
WO2000044089A1 (fr) 2000-07-27
CA2359679A1 (fr) 2000-07-27
CN1196252C (zh) 2005-04-06

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Legal Events

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NUG Patent has lapsed