GB1469864A - System for compensating thermal drift in integrated circuits - Google Patents
System for compensating thermal drift in integrated circuitsInfo
- Publication number
- GB1469864A GB1469864A GB3109274A GB3109274A GB1469864A GB 1469864 A GB1469864 A GB 1469864A GB 3109274 A GB3109274 A GB 3109274A GB 3109274 A GB3109274 A GB 3109274A GB 1469864 A GB1469864 A GB 1469864A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- supplementary
- amplifier
- input
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
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- H01L2224/0554—External layer
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/4912—Layout
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- H01L2924/14—Integrated circuits
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Abstract
1469864 Integrated circuits THOMSON CSF 12 July 1974 [13 July 1973] 31092/74 Heading H1K The components of an integrated circuit are compensated against temperature drift effects by the incorporation into the same semiconductor substrate of a supplementary component exhibiting a temperature-dependent characteristic and feedback means connecting the supplementary component to the supply for the main components. In Fig. 2 the substrate terminal Q of an FET2 is supplied from an amplifier 20 across whose input is a supplementary diode 4 the forward-biased threshold voltage of which varies with temperature. The amplifier 20 may be replaced by a differential amplifier (30), Fig. 3 (not shown), with one input (31) connected to the supplementary diode (4) and the other (32) connected to a variable voltage source (37). The first input (31) is also connected to the output (34) through a variable resistor (36), and the two variable elements (36), (37) allow the response of the amplifier to be adjusted. In a modification of this embodiment the second input (32) of the differential amplifier (30) is connected to a supplementary diode (62), Fig. 6 (not shown), in a second wafer set in a constant temperature housing. In all cases the supplementary diode 4 may be replaced by an FET having its source and gate connected, the temperature-dependent characteristic in this case being the drain current. When a plurality of I.C. wafers are mounted in a common casing temperature compensation of all wafers can be effected by means of a temperature-dependent supplementary component in just one wafer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7325837A FR2241778B1 (en) | 1973-07-13 | 1973-07-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1469864A true GB1469864A (en) | 1977-04-06 |
Family
ID=9122573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3109274A Expired GB1469864A (en) | 1973-07-13 | 1974-07-12 | System for compensating thermal drift in integrated circuits |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2433368A1 (en) |
FR (1) | FR2241778B1 (en) |
GB (1) | GB1469864A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2547136B1 (en) * | 1983-06-01 | 1985-07-12 | Labo Electronique Physique | FREQUENCY STABILIZATION CIRCUIT OF A FREE OSCILLATOR AS A FUNCTION OF TEMPERATURE |
US4882482A (en) * | 1988-10-26 | 1989-11-21 | Tektronix, Inc. | Thermally stabilized optical preamplifier |
US5024535A (en) * | 1989-12-20 | 1991-06-18 | United Technologies Corporation | Semiconductor light source temperature measurement |
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1973
- 1973-07-13 FR FR7325837A patent/FR2241778B1/fr not_active Expired
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1974
- 1974-07-11 DE DE2433368A patent/DE2433368A1/en active Pending
- 1974-07-12 GB GB3109274A patent/GB1469864A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2241778A1 (en) | 1975-03-21 |
DE2433368A1 (en) | 1975-01-30 |
FR2241778B1 (en) | 1977-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |