SE448242B - Forfarande for paforing av harda, motstandskraftiga overdrag av foreningar av metallerna titan, zirkonium eller hafnium med kveve, syre och kol pa underlag genom forangning eller forstoftning - Google Patents

Forfarande for paforing av harda, motstandskraftiga overdrag av foreningar av metallerna titan, zirkonium eller hafnium med kveve, syre och kol pa underlag genom forangning eller forstoftning

Info

Publication number
SE448242B
SE448242B SE8005422A SE8005422A SE448242B SE 448242 B SE448242 B SE 448242B SE 8005422 A SE8005422 A SE 8005422A SE 8005422 A SE8005422 A SE 8005422A SE 448242 B SE448242 B SE 448242B
Authority
SE
Sweden
Prior art keywords
nitrogen
compounds
sputtering
resistant
gas
Prior art date
Application number
SE8005422A
Other languages
English (en)
Swedish (sv)
Other versions
SE8005422L (sv
Inventor
H Kaufmann
Original Assignee
Balzers Hochvakuum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Hochvakuum filed Critical Balzers Hochvakuum
Publication of SE8005422L publication Critical patent/SE8005422L/
Publication of SE448242B publication Critical patent/SE448242B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SE8005422A 1979-08-02 1980-07-28 Forfarande for paforing av harda, motstandskraftiga overdrag av foreningar av metallerna titan, zirkonium eller hafnium med kveve, syre och kol pa underlag genom forangning eller forstoftning SE448242B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH709279A CH640886A5 (de) 1979-08-02 1979-08-02 Verfahren zum aufbringen harter verschleissfester ueberzuege auf unterlagen.

Publications (2)

Publication Number Publication Date
SE8005422L SE8005422L (sv) 1981-02-03
SE448242B true SE448242B (sv) 1987-02-02

Family

ID=4319807

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8005422A SE448242B (sv) 1979-08-02 1980-07-28 Forfarande for paforing av harda, motstandskraftiga overdrag av foreningar av metallerna titan, zirkonium eller hafnium med kveve, syre och kol pa underlag genom forangning eller forstoftning

Country Status (10)

Country Link
US (1) US4346123A (de)
JP (1) JPS5658964A (de)
AT (1) AT369039B (de)
CH (1) CH640886A5 (de)
DE (1) DE3027526A1 (de)
FR (1) FR2463195A1 (de)
GB (1) GB2055403B (de)
IT (1) IT1132031B (de)
NL (1) NL179832C (de)
SE (1) SE448242B (de)

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ES2022946T5 (es) * 1987-08-26 1996-04-16 Balzers Hochvakuum Procedimiento para la aportacion de capas sobre sustratos.
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US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
US5690796A (en) * 1992-12-23 1997-11-25 Balzers Aktiengesellschaft Method and apparatus for layer depositions
US5457298A (en) * 1993-07-27 1995-10-10 Tulip Memory Systems, Inc. Coldwall hollow-cathode plasma device for support of gas discharges
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6162705A (en) * 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
SE518134C2 (sv) 1997-12-10 2002-09-03 Sandvik Ab Multiskiktbelagt skärverktyg
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
WO2001011930A2 (en) 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
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US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
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KR100620076B1 (ko) * 2005-04-27 2006-09-06 한국과학기술연구원 Ｃ와 ｎ으로 도핑된 박막형 이산화티탄계 광촉매 및 자성물질과 그 제조 방법
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8119226B2 (en) * 2006-10-18 2012-02-21 Sandvik Intellectual Property Ab Coated cutting tool
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
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Also Published As

Publication number Publication date
ATA371180A (de) 1982-04-15
IT8023824A0 (it) 1980-07-31
FR2463195A1 (fr) 1981-02-20
SE8005422L (sv) 1981-02-03
AT369039B (de) 1982-11-25
US4346123A (en) 1982-08-24
NL7907163A (nl) 1981-02-04
IT1132031B (it) 1986-06-25
NL179832C (nl) 1986-11-17
GB2055403B (en) 1983-05-05
NL179832B (nl) 1986-06-16
DE3027526A1 (de) 1981-02-19
DE3027526C2 (de) 1988-08-04
FR2463195B1 (de) 1983-03-11
CH640886A5 (de) 1984-01-31
GB2055403A (en) 1981-03-04
JPS5658964A (en) 1981-05-22

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