SE382283B - Sett att framstella en halvledaranordning med ett monster av ledare. - Google Patents

Sett att framstella en halvledaranordning med ett monster av ledare.

Info

Publication number
SE382283B
SE382283B SE7305819A SE7305819A SE382283B SE 382283 B SE382283 B SE 382283B SE 7305819 A SE7305819 A SE 7305819A SE 7305819 A SE7305819 A SE 7305819A SE 382283 B SE382283 B SE 382283B
Authority
SE
Sweden
Prior art keywords
monster
conductors
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
SE7305819A
Other languages
English (en)
Swedish (sv)
Inventor
B Symersky
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE382283B publication Critical patent/SE382283B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/058—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by depositing on sacrificial masks, e.g. using lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/04—Charge transferring layer characterised by chemical composition, i.e. conductive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing Of Electric Cables (AREA)
SE7305819A 1972-04-28 1973-04-25 Sett att framstella en halvledaranordning med ett monster av ledare. SE382283B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7205767.A NL163370C (nl) 1972-04-28 1972-04-28 Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.

Publications (1)

Publication Number Publication Date
SE382283B true SE382283B (sv) 1976-01-19

Family

ID=19815941

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7305819A SE382283B (sv) 1972-04-28 1973-04-25 Sett att framstella en halvledaranordning med ett monster av ledare.

Country Status (13)

Country Link
US (2) US3928658A (en:Method)
JP (2) JPS5636576B2 (en:Method)
AU (1) AU473179B2 (en:Method)
BE (1) BE798883A (en:Method)
BR (1) BR7303088D0 (en:Method)
CA (2) CA983177A (en:Method)
CH (1) CH555087A (en:Method)
DE (2) DE2319883C3 (en:Method)
ES (1) ES414113A1 (en:Method)
FR (2) FR2182208B1 (en:Method)
GB (2) GB1435320A (en:Method)
NL (1) NL163370C (en:Method)
SE (1) SE382283B (en:Method)

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FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
JPS5935195B2 (ja) 1975-03-12 1984-08-27 セイコーエプソン株式会社 デジタル腕時計
US3981757A (en) * 1975-04-14 1976-09-21 Globe-Union Inc. Method of fabricating keyboard apparatus
US4188095A (en) * 1975-07-29 1980-02-12 Citizen Watch Co., Ltd. Liquid type display cells and method of manufacturing the same
US4015987A (en) * 1975-08-13 1977-04-05 The United States Of America As Represented By The Secretary Of The Navy Process for making chip carriers using anodized aluminum
JPS5237744A (en) * 1975-09-19 1977-03-23 Seiko Epson Corp Electronic desk computer with liquid crystal display
US4122524A (en) * 1976-11-03 1978-10-24 Gilbert & Barker Manufacturing Company Sale computing and display package for gasoline-dispensing apparatus
JPS5370688A (en) * 1976-12-06 1978-06-23 Toshiba Corp Production of semoconductor device
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
US4181563A (en) * 1977-03-31 1980-01-01 Citizen Watch Company Limited Process for forming electrode pattern on electro-optical display device
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US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
FR2407746A1 (fr) * 1977-11-07 1979-06-01 Commissariat Energie Atomique Electrode pour cellule d'electrolyse, notamment pour cellule d'affichage electrolytique et son procede de fabrication
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JPS5669835A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Method for forming thin film pattern
EP0051598A1 (en) * 1980-05-08 1982-05-19 Rockwell International Corporation Lift-off process
DE3024213C2 (de) 1980-06-27 1982-09-02 Vdo Adolf Schindling Ag, 6000 Frankfurt Verfahren zur Herstellung von auf einen Träger aufgebrachten Leiterbahnen
DE3028044C1 (de) * 1980-07-24 1981-10-08 Vdo Adolf Schindling Ag, 6000 Frankfurt Lötfähiges Schichtensystem
US4468659A (en) * 1980-08-25 1984-08-28 Sharp Kabushiki Kaisha Electroluminescent display panel assembly
US4344817A (en) * 1980-09-15 1982-08-17 Photon Power, Inc. Process for forming tin oxide conductive pattern
US4502917A (en) * 1980-09-15 1985-03-05 Cherry Electrical Products Corporation Process for forming patterned films
US4838656A (en) * 1980-10-06 1989-06-13 Andus Corporation Transparent electrode fabrication
JPS5772349A (en) * 1980-10-23 1982-05-06 Nec Corp Semiconductor integrated circuit device
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
US4336295A (en) * 1980-12-22 1982-06-22 Eastman Kodak Company Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
JPS57161882A (en) * 1981-03-31 1982-10-05 Hitachi Ltd Display body panel
JPS5834433A (ja) * 1981-08-25 1983-02-28 Optrex Corp 高信頼性電気光学素子及びその製法
DE3136741A1 (de) * 1981-09-16 1983-03-31 Vdo Adolf Schindling Ag, 6000 Frankfurt Fluessigkristallzelle
DE3151557A1 (de) * 1981-12-28 1983-07-21 SWF-Spezialfabrik für Autozubehör Gustav Rau GmbH, 7120 Bietigheim-Bissingen Elektrooptische anzeigevorrichtung und verfahren zu ihrer herstellung
DE3211408A1 (de) * 1982-03-27 1983-09-29 Vdo Adolf Schindling Ag, 6000 Frankfurt Substrat
JPS5965825A (ja) * 1982-10-08 1984-04-14 Hitachi Ltd 液晶表示素子
JPS59180193A (ja) * 1983-03-28 1984-10-13 積水化学工業株式会社 管の接合方法
JPS59230112A (ja) * 1983-06-13 1984-12-24 Hitachi Ltd 車載用電子表示式計器盤
DE3345364A1 (de) * 1983-12-15 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anzeigetafel mit mehreren anzeigeeinheiten
GB8419490D0 (en) * 1984-07-31 1984-09-05 Gen Electric Co Plc Solderable contact materials
GB2166899B (en) * 1984-11-09 1987-12-16 Hitachi Ltd Liquid crystal display device
FR2579809B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede
US4687541A (en) * 1986-09-22 1987-08-18 Rockwell International Corporation Dual deposition single level lift-off process
JPS63160352A (ja) * 1986-12-24 1988-07-04 Semiconductor Energy Lab Co Ltd 半導体装置の実装方法
DE3710223C2 (de) * 1987-03-27 2002-02-21 Aeg Ges Moderne Inf Sys Mbh Leiterbahnenanordnung mit einer überlappenden Verbindung zwischen einer metallischen Leiterbahn und einer ITO-Schicht-Leiterbahn auf einer Isolierplatte aus Glas
JPH01241597A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp フラットパネルディスプレイ装置の駆動方法及びフラットパネルディスプレイ装置
DE4113686A1 (de) * 1991-04-26 1992-10-29 Licentia Gmbh Verfahren zum herstellen eines leiterbahnenmusters, insbesondere einer fluessigkristallanzeigevorrichtung
US5501943A (en) * 1995-02-21 1996-03-26 Motorola, Inc. Method of patterning an inorganic overcoat for a liquid crystal display electrode
US6022803A (en) * 1997-02-26 2000-02-08 Nec Corporation Fabrication method for semiconductor apparatus
US5986391A (en) * 1998-03-09 1999-11-16 Feldman Technology Corporation Transparent electrodes
TW200501258A (en) * 2003-06-17 2005-01-01 Chung Shan Inst Of Science Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material
JP4106438B2 (ja) * 2003-06-20 2008-06-25 独立行政法人産業技術総合研究所 多層微細配線インターポーザおよびその製造方法
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US11923135B2 (en) 2019-08-29 2024-03-05 Kosmek Ltd. Magnetic clamp device

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US3076727A (en) * 1959-12-24 1963-02-05 Libbey Owens Ford Glass Co Article having electrically conductive coating and process of making
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US3210214A (en) * 1962-11-29 1965-10-05 Sylvania Electric Prod Electrical conductive patterns
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US3266127A (en) * 1964-01-27 1966-08-16 Ibm Method of forming contacts on semiconductors
US3443915A (en) * 1965-03-26 1969-05-13 Westinghouse Electric Corp High resolution patterns for optical masks and methods for their fabrication
US3438121A (en) * 1966-07-21 1969-04-15 Gen Instrument Corp Method of making a phosphorous-protected semiconductor device
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3537925A (en) * 1967-03-14 1970-11-03 Gen Electric Method of forming a fine line apertured film
US3551196A (en) * 1968-01-04 1970-12-29 Corning Glass Works Electrical contact terminations for semiconductors and method of making the same
US3620795A (en) * 1968-04-29 1971-11-16 Signetics Corp Transparent mask and method for making the same
DE1906755A1 (de) * 1969-02-11 1970-09-03 Siemens Ag Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske
DE1954499A1 (de) * 1969-10-29 1971-05-06 Siemens Ag Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen
US3702723A (en) * 1971-04-23 1972-11-14 American Micro Syst Segmented master character for electronic display apparatus

Also Published As

Publication number Publication date
CH555087A (de) 1974-10-15
JPS4949595A (en:Method) 1974-05-14
FR2182209A1 (en:Method) 1973-12-07
NL7205767A (en:Method) 1973-10-30
BR7303088D0 (pt) 1974-07-11
GB1435319A (en) 1976-05-12
DE2319883C3 (de) 1982-11-18
GB1435320A (en) 1976-05-12
JPS531117B2 (en:Method) 1978-01-14
BE798883A (fr) 1973-10-29
JPS5636576B2 (en:Method) 1981-08-25
US3822467A (en) 1974-07-09
NL163370B (nl) 1980-03-17
USB354510I5 (en:Method) 1975-01-28
DE2321099B2 (de) 1979-11-08
JPS4955278A (en:Method) 1974-05-29
DE2319883B2 (de) 1979-08-23
AU5543073A (en) 1974-11-14
DE2319883A1 (de) 1973-11-08
US3928658A (en) 1975-12-23
DE2321099A1 (de) 1973-11-08
DE2321099C3 (de) 1982-01-14
CA984932A (en) 1976-03-02
CA983177A (en) 1976-02-03
ES414113A1 (es) 1976-02-01
NL163370C (nl) 1980-08-15
FR2182208B1 (en:Method) 1978-06-23
FR2182208A1 (en:Method) 1973-12-07
AU473179B2 (en) 1976-06-17

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