SA515360699B1 - طريقة لترسيب سيليكون متعدد البللورات - Google Patents

طريقة لترسيب سيليكون متعدد البللورات

Info

Publication number
SA515360699B1
SA515360699B1 SA515360699A SA515360699A SA515360699B1 SA 515360699 B1 SA515360699 B1 SA 515360699B1 SA 515360699 A SA515360699 A SA 515360699A SA 515360699 A SA515360699 A SA 515360699A SA 515360699 B1 SA515360699 B1 SA 515360699B1
Authority
SA
Saudi Arabia
Prior art keywords
polycrystalline silicone
depositing polycrystalline
reactor
silicone
silicon
Prior art date
Application number
SA515360699A
Other languages
English (en)
Inventor
مولر باربارا
كوش توماس
Original Assignee
ووكـــر شــيمي ايه جي
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ووكـــر شــيمي ايه جي filed Critical ووكـــر شــيمي ايه جي
Publication of SA515360699B1 publication Critical patent/SA515360699B1/ar

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

يتعلق الإختراع بطريقة لفصل سيليكون متعدد البللورات polycrystalline silicon، متضمنة إمرار غاز التفاعل المتضمن مكون يحتوى على السيليكون silicon وهيدروجين hydrogen فى المفاعل، وبواسطته يتم ترسيب السيليكون متعدد البللورات polycrystalline silicon فى شكل سيقان، وتتميز بأنها عند إكتمال الترسيب فإن المفاعل يتم فتحه وتهويته لفترة محددة. شكل 2
SA515360699A 2013-01-17 2015-06-28 طريقة لترسيب سيليكون متعدد البللورات SA515360699B1 (ar)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013200660.8A DE102013200660A1 (de) 2013-01-17 2013-01-17 Verfahren zur Abscheidung von polykristallinem Silicium
PCT/EP2014/050437 WO2014111326A1 (de) 2013-01-17 2014-01-13 Verfahren zur abscheidung von polykristallinem silicium

Publications (1)

Publication Number Publication Date
SA515360699B1 true SA515360699B1 (ar) 2018-02-26

Family

ID=49998238

Family Applications (1)

Application Number Title Priority Date Filing Date
SA515360699A SA515360699B1 (ar) 2013-01-17 2015-06-28 طريقة لترسيب سيليكون متعدد البللورات

Country Status (10)

Country Link
US (1) US9620359B2 (ar)
EP (1) EP2945908A1 (ar)
JP (1) JP6046269B2 (ar)
KR (1) KR101731410B1 (ar)
CN (1) CN104918883B (ar)
DE (1) DE102013200660A1 (ar)
MY (1) MY170523A (ar)
SA (1) SA515360699B1 (ar)
TW (1) TWI505988B (ar)
WO (1) WO2014111326A1 (ar)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2018008784A (es) 2016-02-10 2018-09-12 Yoshino Gypsum Co Aparato para producir material de tablero a base de yeso.
KR20190011291A (ko) * 2016-12-14 2019-02-01 와커 헤미 아게 다결정질 실리콘의 제조 방법
CN112105584A (zh) * 2018-12-17 2020-12-18 瓦克化学股份公司 用于制备多晶硅的方法
JP7217720B2 (ja) * 2020-03-10 2023-02-03 信越化学工業株式会社 ベースプレートの汚染防止方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
DE2558387A1 (de) 1974-12-26 1976-07-08 Monsanto Co Verfahren und vorrichtung zur herstellung von polykristallinem silicium
JPS56114815A (en) 1980-02-08 1981-09-09 Koujiyundo Silicon Kk Preliminary washing method of reaction furnace for preparing polycrystalline silicon
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
US8449940B2 (en) * 2007-04-25 2013-05-28 Kagan Ceran Deposition of high-purity silicon via high-surface area gas-solid interfaces and recovery via liquid phase
JP5509578B2 (ja) 2007-11-28 2014-06-04 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法
JP5604803B2 (ja) * 2008-03-28 2014-10-15 三菱マテリアル株式会社 多結晶シリコン製造装置におけるポリマー不活性化方法
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
JP5308288B2 (ja) 2009-09-14 2013-10-09 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法
DE102010042869A1 (de) 2010-10-25 2012-04-26 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinen Siliciumstäben
DE102011089449A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristalliner Siliciumstab und Verfahren zur Herstellung von Polysilicium

Also Published As

Publication number Publication date
CN104918883B (zh) 2017-06-16
KR20150093209A (ko) 2015-08-17
CN104918883A (zh) 2015-09-16
TW201429869A (zh) 2014-08-01
KR101731410B1 (ko) 2017-04-28
WO2014111326A1 (de) 2014-07-24
TWI505988B (zh) 2015-11-01
US20150364323A1 (en) 2015-12-17
JP2016506357A (ja) 2016-03-03
JP6046269B2 (ja) 2016-12-14
DE102013200660A1 (de) 2014-07-17
EP2945908A1 (de) 2015-11-25
MY170523A (en) 2019-08-09
US9620359B2 (en) 2017-04-11

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