RU2218365C2 - Пористая пленка из полипараксилилена и его замещенных, способ ее получения и полупроводниковый прибор с её использованием - Google Patents

Пористая пленка из полипараксилилена и его замещенных, способ ее получения и полупроводниковый прибор с её использованием Download PDF

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RU2218365C2
RU2218365C2 RU2001120908/04A RU2001120908A RU2218365C2 RU 2218365 C2 RU2218365 C2 RU 2218365C2 RU 2001120908/04 A RU2001120908/04 A RU 2001120908/04A RU 2001120908 A RU2001120908 A RU 2001120908A RU 2218365 C2 RU2218365 C2 RU 2218365C2
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film
substituted
semiconductor device
layer
substitutes
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RU2001120908A (ru
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И.Е. Кардаш
А.В. Пебалк
К.А. Маилян
С.Н. Чвалун
Акио ТАКАХАСИ
Юичи САТСУ
Харуказу НАКАЙ
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Федеральное государственное унитарное предприятие "Научно-исследовательский физико-химический институт им. Л.Я.Карпова"
Хитачи, Лтд.
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Priority to PCT/JP2002/007389 priority patent/WO2003011952A1/ja
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Abstract

Изобретение относится к получению пористых пленок из полипараксилилена и его замещенных, имеющим низкую диэлектрическую константу и высокую термостойкость, и полупроводниковому прибору, в котором эта пленка используется в качестве изолирующего слоя. Пористые пленки получают сублимацией циклического димера параксилилена или его замещенных при 30-160oС до образования газообразного димера с последующим пиролизом полученного сублимата от более 800oС до 950oС при скорости потока циклического димера из зоны сублимации в зону пиролиза до 0,009 г/мин и конденсацией с одновременной полимеризацией на подложке полученного параксилилена или его замещенных при (-40oС)-(+25oС) в зоне полимеризации. Процесс проводят при давлении 0,001-0,1 мм рт.ст. с последующей термообработкой полученного полипараксилилена или его замещенных путем ступенчатого нагрева при температуре 200 - 400oС с чередованием нагрева и выдержки при постоянной температуре в шесть стадий при давлении 0,001-0,1 мм рт. ст. или в инертной атмосфере. Полученная пористая пленка содержит 10-50 об.% пор и используется в полупроводниковом приборе. Прибор выполняют из полупроводникового элемента, на поверхности которого формируют слоями тонкую металлическую пленку разводки первого слоя, изолирующую пористую пленку из полипараксилилена или его замещенных, пленку окиси кремния и металлическую пленку разводки второго слоя, электрически соединенную с пленкой разводки первого слоя через сквозные отверстия. Вариант выполнения полупроводникового прибора предусматривает формирование слоев, образующих многослойную разводку на подложке. Изобретение позволяет получить пористые пленки с низкой диэлектрической константой и высокой термостойкостью. 4 с. и 5 з.п.ф-лы, 3 ил.

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Текст описания в факсимильном виде (см. графическую часть).

Claims (9)

1. Способ получения пористых пленок из полипараксилилена или его замещенных, заключающийся в том, что осуществляют сублимацию циклического димера параксилилена или его замещенных при 30-160°С до образования газообразного циклического димера, пиролиз полученного сублимата от более 800°С до 950°С при скорости потока циклического димера параксилилена или его замещенных из зоны сублимации в зону пиролиза до 0,009 г/мин, конденсацию с одновременной полимеризацией на подложке полученного параксилилена или его замещенных при (-40°С)-(+25°С) в зоне полимеризации, причем процесс проводят при давлении 0,001-0,1 мм рт.ст. с последующей термообработкой полученного полипараксилилена или его замещенных путем ступенчатого нагрева при температуре от 200 до 400°С с чередованием нагрева и выдержки при постоянной температуре в шесть стадий при давлении 0,001-0,1 мм рт. ст. или в инертной атмосфере.
2. Способ по п.1, отличающийся тем, что термообработку осуществляют путем нагрева пленки из полипараксилилена или его замещенных на первой стадии до 200°С со скоростью не более 4° С/мин, выдержки на второй стадии при 200°С не менее 35 мин, нагрева на третьей стадии до 380°С со скоростью не более 0,5° С/мин, выдержки на четвертой стадии при 380°С не менее 70 мин, нагрева на пятой стадии до 400°С со скоростью не более 0,5°С/мин и выдержки на шестой стадии при 400°С не менее 70 мин.
3. Способ по пп.1 и 2, отличающийся тем, что полипараксилилен или его замещенные извлекают из зоны полимеризации после завершения полимеризации и затем подвергают термообработке.
4. Пленка из полипараксилилена или его замещенных, имеющая пористую структуру с содержанием пор в количестве от 10 до 50 об.%, полученная способом по пп.1-3.
5. Полупроводниковый прибор, выполненный из полупроводникового элемента, на поверхности которого формируют слоями тонкую металлическую пленку разводки первого слоя, изолирующую пористую пленку из полипараксилилена или его замещенных по п.4, полученную способом по пп.1-3, пленку окиси кремния и металлическую пленку разводки второго слоя, электрически соединенную с пленкой разводки первого слоя через сквозные отверстия.
6. Полупроводниковый прибор по п.5, отличающийся тем, что изолирующая пленка полипараксилилена или его замещенных имеет пористую структуру с содержанием пор в количестве от 25 до 50 об. %.
7. Полупроводниковый прибор по пп.5 и 6, отличающийся тем, что изолирующая пленка является пленкой из фторированного полипараксилилена.
8. Полупроводниковый прибор, выполненный из подложки и многослойной разводки, в котором слои разводки состоят из проводящей цепи и сформированной на ней изолирующей пористой пленки из полипараксилилена или его замещенных по п.4, полученной способом по пп.1-3, слои разводки формируют один под другим так, чтобы по крайней мере один слой разводки находился на поверхности подложки.
9. Полупроводниковый прибор по п.8, отличающийся тем, что подложка выполнена из пористой пленки на основе полипараксилилена или его замещенных по п.4, полученного способом по пп.1-3.
RU2001120908/04A 2001-07-27 2001-07-27 Пористая пленка из полипараксилилена и его замещенных, способ ее получения и полупроводниковый прибор с её использованием RU2218365C2 (ru)

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PCT/JP2002/007389 WO2003011952A1 (fr) 2001-07-27 2002-07-22 Film de polyparaxylene, son procede de production et dispositif semi-conducteur
US10/484,840 US6946405B2 (en) 2001-07-27 2002-07-22 Polyparaxylylene film, production method therefor and semiconductor device
JP2003517137A JPWO2003011952A1 (ja) 2001-07-27 2002-07-22 ポリパラキシリレンフィルム、その製造方法及び半導体装置

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2317313C2 (ru) * 2004-10-28 2008-02-20 Самсунг Электроникс Ко., Лтд Способ получения жидкокристаллической полимерной пленки
US7603293B2 (en) * 2005-06-24 2009-10-13 Innova Electronics Corporation Method of providing diagnostic information in connection with the sale of pre-owned vehicles
US20070148390A1 (en) * 2005-12-27 2007-06-28 Specialty Coating Systems, Inc. Fluorinated coatings
US20100255376A1 (en) 2009-03-19 2010-10-07 Carbon Micro Battery Corporation Gas phase deposition of battery separators
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
TWI607032B (zh) 2017-01-18 2017-12-01 美樺興業股份有限公司 聚對二甲苯的三維多孔性結構
JP6383036B1 (ja) * 2017-03-16 2018-08-29 株式会社Ｓｕｂａｒｕ 車両の制御装置
JP6953999B2 (ja) * 2017-10-26 2021-10-27 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753773A (en) * 1972-04-26 1973-08-21 North American Rockwell Coating of poly-para-heterocyclic-xylene polymer
US3936531A (en) * 1973-05-01 1976-02-03 Union Carbide Corporation Masking process with thermal destruction of edges of mask
US4321299A (en) * 1977-09-15 1982-03-23 Nasa Strong thin membrane structure for use as solar sail comprising substrate with reflective coating on one surface and an infra red emissivity increasing coating on the other surface
US5268033A (en) * 1991-07-01 1993-12-07 Jeffrey Stewart Table top parylene deposition chamber
JPH08162528A (ja) * 1994-10-03 1996-06-21 Sony Corp 半導体装置の層間絶縁膜構造
US5992228A (en) * 1996-10-23 1999-11-30 Dunham; Lanny L. Method for determining resistivity derived porosity and porosity derived resistivity
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5858457A (en) * 1997-09-25 1999-01-12 Sandia Corporation Process to form mesostructured films
US5945605A (en) * 1997-11-19 1999-08-31 Sensym, Inc. Sensor assembly with sensor boss mounted on substrate
WO2000006307A1 (fr) * 1998-07-30 2000-02-10 Aktsionernoe Obschestvo Zakritogo Tipa Procede de conservation de materiaux poreux
JP3228251B2 (ja) * 1998-12-16 2001-11-12 日本電気株式会社 Ｃｖｄ装置及びそれを使用した半導体装置の製造方法
JP3230510B2 (ja) * 1999-01-25 2001-11-19 日本電気株式会社 半導体装置の製造装置および半導体装置の製造方法
US6214650B1 (en) * 2000-02-01 2001-04-10 Lockheed Martin Corporation Method and apparatus for sealing a ball grid array package and circuit card interconnection

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