RU2188465C2 - Запоминающая ячейка статического зупв - Google Patents

Запоминающая ячейка статического зупв Download PDF

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Publication number
RU2188465C2
RU2188465C2 RU98107644/09A RU98107644A RU2188465C2 RU 2188465 C2 RU2188465 C2 RU 2188465C2 RU 98107644/09 A RU98107644/09 A RU 98107644/09A RU 98107644 A RU98107644 A RU 98107644A RU 2188465 C2 RU2188465 C2 RU 2188465C2
Authority
RU
Russia
Prior art keywords
transistor
bistable
potential
effect transistor
bimos
Prior art date
Application number
RU98107644/09A
Other languages
English (en)
Russian (ru)
Other versions
RU98107644A (ru
Inventor
Харальд ГОССНЕР (DE)
Харальд ГОССНЕР
Игнац АЙЗЕЛЕ (DE)
Игнац АЙЗЕЛЕ
Франц ВИТТМАНН (DE)
Франц ВИТТМАНН
РАО Валип РАМГОПАЛ (DE)
РАО Валип РАМГОПАЛ
Original Assignee
Сименс Акциенгезелльшафт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сименс Акциенгезелльшафт filed Critical Сименс Акциенгезелльшафт
Publication of RU98107644A publication Critical patent/RU98107644A/ru
Application granted granted Critical
Publication of RU2188465C2 publication Critical patent/RU2188465C2/ru

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
RU98107644/09A 1995-09-21 1996-09-16 Запоминающая ячейка статического зупв RU2188465C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle
DE19535106.1 1995-09-21

Publications (2)

Publication Number Publication Date
RU98107644A RU98107644A (ru) 2000-02-20
RU2188465C2 true RU2188465C2 (ru) 2002-08-27

Family

ID=7772785

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98107644/09A RU2188465C2 (ru) 1995-09-21 1996-09-16 Запоминающая ячейка статического зупв

Country Status (11)

Country Link
US (1) US6067247A (ref)
EP (1) EP0852056B1 (ref)
JP (1) JP3083567B2 (ref)
KR (1) KR100286953B1 (ref)
CN (1) CN1197532A (ref)
AT (1) ATE181450T1 (ref)
DE (2) DE19535106C2 (ref)
ES (1) ES2135925T3 (ref)
IN (1) IN188999B (ref)
RU (1) RU2188465C2 (ref)
WO (1) WO1997011465A2 (ref)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
JP2003257184A (ja) * 2002-02-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073167A1 (fr) * 1981-08-21 1983-03-02 Thomson-Csf Circuit logique bistable utilisant des transistors à effet de champ à faible tension de seuil, et dispositif de mémorisation comportant un tel circuit
US4393471A (en) * 1979-11-15 1983-07-12 U.S. Philips Corporation Memory cell arrangement for a static memory
US4409679A (en) * 1980-03-26 1983-10-11 Fujitsu Limited Static memory circuit
EP0337870A1 (fr) * 1988-04-12 1989-10-18 Commissariat A L'energie Atomique Mémoire et cellule mémoire statiques du type MIS, procédé de mémorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288189B2 (ja) * 1994-12-12 2002-06-04 三菱電機株式会社 スタティックランダムアクセスメモリ
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393471A (en) * 1979-11-15 1983-07-12 U.S. Philips Corporation Memory cell arrangement for a static memory
US4409679A (en) * 1980-03-26 1983-10-11 Fujitsu Limited Static memory circuit
EP0073167A1 (fr) * 1981-08-21 1983-03-02 Thomson-Csf Circuit logique bistable utilisant des transistors à effet de champ à faible tension de seuil, et dispositif de mémorisation comportant un tel circuit
EP0337870A1 (fr) * 1988-04-12 1989-10-18 Commissariat A L'energie Atomique Mémoire et cellule mémoire statiques du type MIS, procédé de mémorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Also Published As

Publication number Publication date
DE59602264D1 (de) 1999-07-22
DE19535106A1 (de) 1997-03-27
US6067247A (en) 2000-05-23
ATE181450T1 (de) 1999-07-15
JP3083567B2 (ja) 2000-09-04
WO1997011465A3 (de) 1997-04-17
WO1997011465A2 (de) 1997-03-27
KR100286953B1 (ko) 2001-04-16
IN188999B (ref) 2002-12-07
EP0852056B1 (de) 1999-06-16
JPH11500563A (ja) 1999-01-12
ES2135925T3 (es) 1999-11-01
KR19990045750A (ko) 1999-06-25
EP0852056A2 (de) 1998-07-08
DE19535106C2 (de) 1998-03-19
CN1197532A (zh) 1998-10-28

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20030917