RU2007115911A - Устройство и способ для изменения пороговых напряжений активации деформируемой мембраны в интерферометрическом модуляторе - Google Patents
Устройство и способ для изменения пороговых напряжений активации деформируемой мембраны в интерферометрическом модулятореInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
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Claims (44)
1. Микроэлектромеханическая система, содержащая проводящий слой, механический слой, отделенный полостью от проводящего слоя и способный перемещаться относительно проводящего слоя, и постоянно заряженный слой, содержащий внедренные заряженные частицы, причем заряженный слой снабжен изолирующим материалом, способным препятствовать рассеянию заряда от внедренных заряженных частиц, в которой заряженный слой расположен между проводящим слоем и механическим слоем.
2. Микроэлектромеханическая система по п.1, в которой заряженный слой жестко соединен с проводящим слоем или механическим слоем.
3. Микроэлектромеханическая система по п.1, в которой заряженный слой представляет собой слой диэлектрика с внедренными ионами.
4. Микроэлектромеханическая система по п.1, в которой внедренные заряженные частицы являются свежеосажденными ионами в слое диэлектрика.
5. Микроэлектромеханическая система по п.1, в которой внедренные заряженные частицы являются ионами калия или фосфора.
6. Микроэлектромеханическая система по п.1, в которой внедренные заряженные частицы являются положительно заряженными ионами, выбранными из группы, состоящей из ионов натрия и ионов лития.
7. Микроэлектромеханическая система по п.1, в которой механический слой жестко присоединен к зеркалу, отделенному от механического слоя, в которой механический слой способен перемещать зеркало относительно заряженного слоя.
8. Микроэлектромеханическая система по п.1, в которой микроэлектромеханическая система представляет собой интерферометрическое устройство модуляции света, способное обеспечивать усиливающую и/или ослабляющую интерференцию света, падающего на механический и заряженный слои.
9. Микроэлектромеханическая система по п.1, дополнительно содержащая дисплей, процессор, электрически связанный с дисплеем, причем процессор способен обрабатывать данные изображения, и устройство памяти, электрически связанное с процессором.
10. Микроэлектромеханическая система по п.9, дополнительно содержащая схему драйвера, способную передавать, по меньшей мере, один сигнал на дисплей.
11. Микроэлектромеханическая система по п.10, дополнительно содержащая контроллер, способный передавать, по меньшей мере, часть данных изображения на схему драйвера.
12. Микроэлектромеханическая система по п.9, дополнительно содержащая модуль источника изображения, способный передавать данные изображения на процессор.
13. Микроэлектромеханическая система по п.12, в которой модуль источника изображения содержит, по меньшей мере, один из приемника, приемопередатчика и передатчика.
14. Микроэлектромеханическая система по п.9, дополнительно содержащая устройство ввода, способное принимать входные данные и передавать входные данные на процессор.
15. Микроэлектромеханическая система, содержащая проводящий слой, механический слой, отделенный полостью от проводящего слоя и способный перемещаться относительно проводящего слоя, и заряженный слой, содержащий внедренные заряженные частицы, причем заряженный слой расположен между проводящим слоем и механическим слоем, дополнительно содержащая совокупность интерферометрических устройств модуляции света, в которой некоторые интерферометрические устройства модуляции света содержат заряженный слой, а другие интерферометрические устройства модуляции света не имеют заряженного слоя.
16. Микроэлектромеханическая система по п.15, в которой некоторые интерферометрические устройства модуляции света имеют проводящие слои и механические слои, способные обеспечивать усиливающую интерференцию преимущественно на одной частоте, и в которой другие интерферометрические устройства модуляции света имеют проводящие слои и механические слои, способные обеспечивать усиливающую интерференцию преимущественно на одной или нескольких других частотах, в которой некоторые интерферометрические устройства модуляции света и другие интерферометрические устройства модуляции света сгруппированы для формирования пикселей на дисплее.
17. Способ модуляции электромагнитного излучения, содержащий этапы, на которых обеспечивают совокупность микромеханических устройств, причем каждое устройство содержит проводящий слой, отражающий слой, параллельный проводящему слою и находящийся на расстоянии от него, будучи в деактивированном состоянии, причем отражающий слой способен перемещаться относительно проводящего слоя после перехода в активированное состояние, и заряженный слой между проводящим слоем и отражающим слоем, причем заряженный слой имеет внедренные заряженные частицы, в котором расстояние для некоторых из совокупности микромеханических устройств отличается от расстояния для других из совокупности микромеханических устройств, и подают напряжение на проводящие слои и отражающие слои микромеханических устройств для активации микромеханических устройств.
18. Способ по п.17, в котором на этапе подачи напряжения на проводящие слои и отражающие слои микромеханических устройств для активации микромеханических устройств подают напряжение на проводящие слои и отражающие слои некоторых микромеханических устройств для активации некоторых микромеханических устройств и подают такое же напряжение на проводящие слои и отражающие слои других микромеханических устройств для активации других микромеханических устройств.
19. Способ по п.17, в котором на этапах подачи напряжения и подачи такого же напряжения изменяют характер интерференции электромагнитных волн, падающих на проводящие слои и отражающие слои.
20. Способ по п.17, в котором на этапах подачи напряжения и подачи такого же напряжения обеспечивают усиливающую интерференцию на одной или нескольких нужных световых частотах.
21. Способ изготовления интерферометрического модулятора, содержащий этапы, на которых формируют первый проводящий слой, формируют слой диэлектрика поверх первого проводящего слоя, добавляют заряженные частицы в слой диэлектрика, и затем формируют второй проводящий слой поверх слоя диэлектрика.
22. Способ по п.21, в котором на этапе добавления заряженных частиц осуществляют внедрение ионов после формирования слоя диэлектрика.
23. Способ по п.21, в котором на этапе добавления заряда направляют ионы в диэлектрик в ходе формирования диэлектрика.
24. Способ по п.23, в котором на этапе добавления заряженных частиц одновременно напыляют ионный предшественник и один или несколько диэлектрических предшественников.
25. Способ по п.21, в котором на этапе добавления заряженных частиц легируют слой диэлектрика.
26. Способ по п.25, в котором на этапе легирования слоя диэлектрика рассеивают легирующие примеси в слое диэлектрика.
27. Способ по п.21, в котором заряд обеспечивают путем внедрения ионов, выбранных из группы, состоящей из ионов калия и фосфора.
28. Способ по п.21, в котором заряд обеспечивают путем внедрения ионов, выбранных из группы, состоящей из ионов натрия и ионов лития.
29. Способ по п.21, в котором на этапе формирования первого проводящего слоя осаждают слой хрома и/или оксида индия-олова.
30. Способ по п.29, в котором на этапе формирования слоя диэлектрика осаждают оксид.
31. Способ по п.30, в котором оксид выбирают из группы, состоящей из оксида алюминия и/или оксида кремния.
32. Способ по п.30, дополнительно содержащий этап, на котором осаждают слой расходуемого материала поверх слоя диэлектрика до формирования второго проводящего слоя.
33. Способ по п.37, дополнительно содержащий этап, на котором предпочтительно удаляют расходуемый материал.
34. Микромеханическое устройство, сформированное способом по п.21.
35. Интерферометрический модулятор, содержащий первое средство для частичного отражения света, второе средство для отражения света и для перемещения относительно первого средства при создании разности потенциалов между первым и вторым средствами, и третье средство для изменения порогового напряжения активации второго средства.
36. Интерферометрический модулятор по п.35, в котором первое средство содержит проводящий слой.
37. Интерферометрический модулятор по п.35, в котором второе средство содержит второй проводящий слой.
38. Интерферометрический модулятор по пп.35, 36 или 37, в котором третье средство содержит ионы, внедренные в диэлектрик, расположенный между проводником и вторыми проводящими слоями и в непосредственной близости от одного из них.
39. Интерферометрический модулятор по п.38, в котором заряженные частицы содержат постоянно заряженные ионы.
40. Микроэлектромеханическая система, содержащая совокупность интерферометрических модуляторов, причем каждый интерферометрический модулятор содержит проводящий слой, механический слой, отделенный полостью от проводящего слоя и способный перемещаться относительно проводящего слоя, и заряженный слой, содержащий внедренные заряженные частицы, причем заряженный слой расположен между проводящим слоем и механическим слоем, в котором, по меньшей мере, некоторые интерферометрические устройства модуляции света содержат другие внедренные заряженные частицы, чем другие интерферометрические устройства модуляции света.
41. Микроэлектромеханическая система по п.40, в которой, по меньшей мере, некоторые интерферометрические устройства модуляции света содержат положительно заряженные внедренные заряженные частицы, и другие интерферометрические устройства модуляции света содержат отрицательно заряженные внедренные заряженные частицы.
42. Микроэлектромеханическая система, содержащая проводящий слой, механический слой, отделенный полостью от проводящего слоя и способный перемещаться относительно проводника, заряженный слой, содержащий внедренные заряженные частицы, причем заряженный слой расположен между проводящим слоем и механическим слоем, и другой заряженный слой, отделенный от заряженного слоя полостью, причем другой заряженный слой содержит дополнительные внедренные заряженные частицы.
43. Микроэлектромеханическая система по п.42, в которой дополнительные внедренные заряженные частицы другого заряженного слоя имеют полярность, противоположную внедренным заряженным частицам заряженного слоя.
44. Микроэлектромеханическая система по п.42, в которой дополнительные внедренные заряженные частицы другого заряженного слоя имеют такую же полярность, что и внедренные заряженные частицы заряженного слоя.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US61345104P | 2004-09-27 | 2004-09-27 | |
US60/613,451 | 2004-09-27 | ||
US11/197,885 | 2005-08-05 | ||
US11/197,885 US7369296B2 (en) | 2004-09-27 | 2005-08-05 | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
Publications (1)
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RU2007115911A true RU2007115911A (ru) | 2008-11-10 |
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RU2007115911/28A RU2007115911A (ru) | 2004-09-27 | 2005-08-30 | Устройство и способ для изменения пороговых напряжений активации деформируемой мембраны в интерферометрическом модуляторе |
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US (3) | US7369296B2 (ru) |
EP (2) | EP2290426A1 (ru) |
JP (1) | JP2008514987A (ru) |
MX (1) | MX2007003601A (ru) |
RU (1) | RU2007115911A (ru) |
TW (1) | TW200622327A (ru) |
WO (1) | WO2006036437A1 (ru) |
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-
2005
- 2005-08-05 US US11/197,885 patent/US7369296B2/en not_active Expired - Fee Related
- 2005-08-30 EP EP10011033A patent/EP2290426A1/en not_active Withdrawn
- 2005-08-30 JP JP2007533494A patent/JP2008514987A/ja active Pending
- 2005-08-30 EP EP05792735A patent/EP1800162A1/en not_active Withdrawn
- 2005-08-30 WO PCT/US2005/030927 patent/WO2006036437A1/en active Application Filing
- 2005-08-30 MX MX2007003601A patent/MX2007003601A/es not_active Application Discontinuation
- 2005-08-30 RU RU2007115911/28A patent/RU2007115911A/ru not_active Application Discontinuation
- 2005-09-16 TW TW094132188A patent/TW200622327A/zh unknown
-
2008
- 2008-02-07 US US12/027,862 patent/US7660031B2/en not_active Expired - Fee Related
-
2009
- 2009-12-04 US US12/631,625 patent/US7830589B2/en not_active Expired - Fee Related
Also Published As
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US20100079849A1 (en) | 2010-04-01 |
EP2290426A1 (en) | 2011-03-02 |
US20080144163A1 (en) | 2008-06-19 |
WO2006036437A1 (en) | 2006-04-06 |
US7369296B2 (en) | 2008-05-06 |
US7660031B2 (en) | 2010-02-09 |
US7830589B2 (en) | 2010-11-09 |
TW200622327A (en) | 2006-07-01 |
MX2007003601A (es) | 2007-05-23 |
US20060077528A1 (en) | 2006-04-13 |
JP2008514987A (ja) | 2008-05-08 |
EP1800162A1 (en) | 2007-06-27 |
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