RU2004103976A - Способ получения тетрафторсилана, метод анализа примесей в тетрафторсилане и газ на его основе - Google Patents
Способ получения тетрафторсилана, метод анализа примесей в тетрафторсилане и газ на его основе Download PDFInfo
- Publication number
- RU2004103976A RU2004103976A RU2004103976/15A RU2004103976A RU2004103976A RU 2004103976 A RU2004103976 A RU 2004103976A RU 2004103976/15 A RU2004103976/15 A RU 2004103976/15A RU 2004103976 A RU2004103976 A RU 2004103976A RU 2004103976 A RU2004103976 A RU 2004103976A
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- Prior art keywords
- tetrafluorosilane
- stage
- gaseous
- gas
- impurities
- Prior art date
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- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 title claims abstract 23
- 239000012535 impurity Substances 0.000 title claims abstract 8
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 238000004458 analytical method Methods 0.000 title claims 3
- 238000000034 method Methods 0.000 claims abstract 25
- ARBIYISMVFAYHV-UHFFFAOYSA-N trifluoro(trifluorosilyloxy)silane Chemical compound F[Si](F)(F)O[Si](F)(F)F ARBIYISMVFAYHV-UHFFFAOYSA-N 0.000 claims abstract 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052731 fluorine Inorganic materials 0.000 claims abstract 5
- 239000011737 fluorine Substances 0.000 claims abstract 5
- 150000004761 hexafluorosilicates Chemical class 0.000 claims abstract 4
- 229910001512 metal fluoride Inorganic materials 0.000 claims abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 5
- 238000006243 chemical reaction Methods 0.000 claims 4
- -1 fluoride compound Chemical class 0.000 claims 4
- 239000012528 membrane Substances 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 239000002808 molecular sieve Substances 0.000 claims 3
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims 3
- 239000003463 adsorbent Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- 238000004566 IR spectroscopy Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 238000003682 fluorination reaction Methods 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 239000011301 petroleum pitch Substances 0.000 claims 1
- 229920000306 polymethylpentene Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
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- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
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- Investigating Or Analysing Materials By Optical Means (AREA)
Claims (25)
1. Способ получения тетрафторсилана, включающий стадию (1) нагревания гексафторсиликата, стадию (2-1) реакции газообразного тетрафторсилана, содержащего гексафтордисилоксан, образовавшийся на стадии (1) с газообразным фтором, стадию (2-2) реакции газообразного тетрафторсилана, содержащего гексафтордисилоксан, образовавшийся на стадии (1) с фтористым соединением многовалентного металла, или стадию (2-1) реакции газообразного тетрафторсилана, содержащего гексафтордисилоксан, образовавшийся на стадии (1) с газообразным фтором, и стадию (2-3) реакции газообразного тетрафторсилана, полученного на стадии (2-1) с фтористым соединением многовалентного металла.
2. Способ по п.1, в котором стадию (1) проводят при температуре 400°С или выше.
3. Способ по п.1, в котором стадию (2-1) проводят при температуре 100-350°С.
4. Способ по п.1, в котором стадию (2-2) или стадию (2-3) проводят при температуре 50-350°С.
5. Способ по любому из пп.1-4, в котором гексафторсиликат представляет собой, по меньшей мере, одно соединение, выбранное из группы, состоящей из гексафторсиликата щелочного металла или гексафторсиликата щелочноземельного металла.
6. Способ по п.1, в котором гексафторсиликат измельчают и сушат перед проведением стадии (1).
7. Способ по п.1, в котором фтористое соединение многовалентного металла представляет собой, по меньшей мере, одно соединение, выбранное из группы, состоящей из CoF3, MnF3, MnF4, AgF2, CeF4, PbF4 и K3NiF7.
8. Способ по п.1, в котором используют фтористое соединение многовалентного металла на носителе.
9. Способ по п.8, в котором носитель получают фторированием, по меньшей мере, одного соединения, выбранного из группы, состоящей из оксида алюминия, оксида титана и оксида циркония.
10. Способ по п.1, в котором стадию (2-2) или стадию (2-3) проводят в присутствии газообразного фтора.
11. Способ по п.1, включающий стадию (3) контактирования кремния с газообразным тетрафторсиланом, полученным на стадии (2-1), стадии (2-2) или стадиях (2-1)и(2-3).
12. Способ по п.11, в котором стадию (3) проводят при температуре 50°С или выше.
13. Способ по п.11 или 12, в котором перед проведением стадии (3) кремний подвергают термообработке в присутствии инертного газа при 400°С или выше.
14. Способ по п.1, включающий стадию (4), заключающуюся в контактировании газа, полученного на стадии (2-1), стадии (2-2), стадиях (2-1) и (2-3), стадиях (2-1) и (3), стадиях (2-2) и (3), или стадиях (2-1), (2-3) и (3), с газоразделительной мембраной и/или молекулярно-ситовым углеродом.
15. Способ по п.14, в котором газоразделительная мембрана представляет собой SiO2-ZrO2 керамическую мембрану и/или поли(4-метилпентен-1) гетерогенизированную мембрану.
16. Способ по п.14, в котором молекулярно-ситовой углерод имеет размер пор 5Å или менее.
17. Высокочистый тетрафторсилан, содержащий гексафтордисилоксан в количестве 1 об.млн-1 или менее, полученный способом по любому из пп.1-16.
18. Высокочистый тетрафторсилан по п.17, содержащий гексафтордисилоксан в количестве 0,1 об.млн-1 или менее.
19. Метод анализа примесей в высокочистом тетрафторсилане, заключающийся в контактировании тетрафторсилана, содержащего в качестве примесей газообразный H2, газообразный O2, газообразный N2, газообразный СО, газообразный СН4 и/или газообразный СО2, с адсорбентом с целью отделения указанных примесей от тетрафторсилана, и введении указанных примесей совместно с газом-носителем в газовый хроматограф с целью анализа примесей.
20. способ по пункту 19, в котором адсорбент представляет собой активированный уголь, сферический активированный уголь на основе нефтяного пека и/или молекулярно-ситовой углерод с размером пор 6Å или более.
21. Метод анализа примесей в высокочистом тетрафторсилане, заключающийся в введении тетрафторсилана, содержащего гексафтордисилоксан в качестве примеси в оптическую ячейку, окно которой изготовлено из галогенида металла, и анализе гексафтордисилоксана и/или фтористого водорода методом инфракрасной спектрометрии.
22. Способ по п.1, в котором способ по любому из пп.19-21 используется для контроля процесса.
23. Газ, предназначенный для производства оптического волокна, включающий газообразный тетрафторсилан, полученный способом по любому из пп.1-16.
24. Газ, предназначенный для производства полупроводников, включающий газообразный тетрафторсилан, полученный способом по любому из пп.1-16.
25. Газ, предназначенный для производства элемента солнечной батареи, включающий газообразный тетрафторсилан, полученный способом по любому из пп.1-16.
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US (1) | US7074377B2 (ru) |
EP (1) | EP1406837B1 (ru) |
JP (1) | JP3909385B2 (ru) |
KR (1) | KR100636659B1 (ru) |
CN (1) | CN100478276C (ru) |
AT (1) | ATE466818T1 (ru) |
DE (1) | DE60236285D1 (ru) |
RU (1) | RU2274603C2 (ru) |
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US7666379B2 (en) | 2001-07-16 | 2010-02-23 | Voltaix, Inc. | Process and apparatus for removing Bronsted acid impurities in binary halides |
JP4588396B2 (ja) * | 2003-09-25 | 2010-12-01 | 昭和電工株式会社 | テトラフルオロシランの製造方法 |
TW200512159A (en) * | 2003-09-25 | 2005-04-01 | Showa Denko Kk | Method for producing tetrafluorosilane |
WO2005092790A2 (en) * | 2004-03-19 | 2005-10-06 | Entegris, Inc. | Method and apparatus for purifying inorganic halides and oxyhalides using zeolites |
US8017405B2 (en) | 2005-08-08 | 2011-09-13 | The Boc Group, Inc. | Gas analysis method |
US9001335B2 (en) | 2005-09-30 | 2015-04-07 | Mks Instruments Inc. | Method and apparatus for siloxane measurements in a biogas |
US7807074B2 (en) * | 2006-12-12 | 2010-10-05 | Honeywell International Inc. | Gaseous dielectrics with low global warming potentials |
JP2010537947A (ja) * | 2007-09-04 | 2010-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 四フッ化ケイ素及び塩化水素を含有するガス流の処理方法 |
US20090166173A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
US20090165647A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
WO2010077880A1 (en) * | 2008-12-17 | 2010-07-08 | Memc Electronic Materials, Inc. | Processes and systems for producing silicon tetrafluoride from fluorosilicates in a fluidized bed reactor |
KR101025748B1 (ko) | 2009-03-03 | 2011-04-04 | (주)원익머트리얼즈 | 불소가스 불순물 분석 장치 |
KR101103566B1 (ko) * | 2009-05-15 | 2012-01-06 | 이용권 | 습식전극에 의한 피부 주름 다스림 장치 |
KR101159674B1 (ko) * | 2009-11-16 | 2012-06-25 | 주식회사 케이씨씨 | 모노실란의 정제방법 |
US20110305621A1 (en) * | 2010-06-11 | 2011-12-15 | Kyung Hoon Kang | Method Of Continuously Producing Tetrafluorosilane By Using Various Fluorinated Materials, Amorphous Silica And Sulfuric Acid |
KR101215490B1 (ko) * | 2010-06-11 | 2012-12-26 | 주식회사 케이씨씨 | 다양한 플루오라이드 원료들과 비정질 실리카 및 황산을 이용한 사불화규소의 연속 제조방법 |
US20120122265A1 (en) * | 2010-11-17 | 2012-05-17 | Hitachi Chemical Company, Ltd. | Method for producing photovoltaic cell |
CN102515170A (zh) * | 2011-12-16 | 2012-06-27 | 天津市泰亨气体有限公司 | 采用氟硅酸法来制备四氟硅烷的方法 |
JP5933034B2 (ja) * | 2012-01-17 | 2016-06-08 | エムケイエス インストゥルメンツ, インコーポレイテッド | バイオガス中のシロキサンを測定するための方法及び装置 |
FI125535B (en) * | 2013-09-02 | 2015-11-13 | Teknologian Tutkimuskeskus Vtt Oy | Method and apparatus for determining the siloxane content of a gas |
KR102344996B1 (ko) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
CN111837025A (zh) * | 2018-03-12 | 2020-10-27 | 关东电化工业株式会社 | 气体分析方法及装置 |
CN113247907A (zh) * | 2021-05-14 | 2021-08-13 | 浙江福陆工程设计有限公司 | 一种用石英砂法制备四氟化硅的方法 |
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DE60236285D1 (de) | 2010-06-17 |
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US20040184980A1 (en) | 2004-09-23 |
EP1406837B1 (en) | 2010-05-05 |
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CN1527796A (zh) | 2004-09-08 |
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