PT3497519T - Resiste amplificado quimicamente de película espessa ambientalmente estável - Google Patents

Resiste amplificado quimicamente de película espessa ambientalmente estável

Info

Publication number
PT3497519T
PT3497519T PT177523461T PT17752346T PT3497519T PT 3497519 T PT3497519 T PT 3497519T PT 177523461 T PT177523461 T PT 177523461T PT 17752346 T PT17752346 T PT 17752346T PT 3497519 T PT3497519 T PT 3497519T
Authority
PT
Portugal
Prior art keywords
enviromentally
stable
thick film
chemically amplified
amplified resist
Prior art date
Application number
PT177523461T
Other languages
English (en)
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of PT3497519T publication Critical patent/PT3497519T/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Other In-Based Heterocyclic Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
PT177523461T 2016-08-09 2017-08-07 Resiste amplificado quimicamente de película espessa ambientalmente estável PT3497519T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201662372573P 2016-08-09 2016-08-09

Publications (1)

Publication Number Publication Date
PT3497519T true PT3497519T (pt) 2021-02-09

Family

ID=59631750

Family Applications (1)

Application Number Title Priority Date Filing Date
PT177523461T PT3497519T (pt) 2016-08-09 2017-08-07 Resiste amplificado quimicamente de película espessa ambientalmente estável

Country Status (8)

Country Link
US (1) US11385543B2 (pt)
EP (1) EP3497519B1 (pt)
JP (1) JP6818888B2 (pt)
KR (1) KR102261808B1 (pt)
CN (1) CN109844641B (pt)
PT (1) PT3497519T (pt)
TW (1) TWI717543B (pt)
WO (1) WO2018029142A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7002966B2 (ja) * 2018-03-12 2022-01-20 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法
KR20240090788A (ko) * 2018-12-12 2024-06-21 제이에스알 가부시끼가이샤 감광성 수지 조성물, 레지스트 패턴막의 제조 방법, 및 도금 조형물의 제조 방법
CN110531579A (zh) * 2019-09-26 2019-12-03 京东方科技集团股份有限公司 掩模版及其制造方法、光刻方法、显示面板、曝光装置
TWI833992B (zh) * 2019-10-15 2024-03-01 美商羅門哈斯電子材料有限公司 光致抗蝕劑組成物及圖案形成方法
KR20220101662A (ko) 2019-11-14 2022-07-19 메르크 파텐트 게엠베하 알칼리-가용성 아크릴 수지를 포함하는 dnq-타입 포토레지스트 조성물
KR20220106794A (ko) * 2019-11-25 2022-07-29 메르크 파텐트 게엠베하 화학 증폭형 포토레지스트
US20210200084A1 (en) * 2019-12-31 2021-07-01 Rohm And Haas Electronic Materials Llc Polymers and photoresist compositions
WO2021192802A1 (ja) * 2020-03-26 2021-09-30 富士フイルム株式会社 感放射線性樹脂組成物の製造方法、パターン形成方法
CN118284852A (zh) 2021-11-17 2024-07-02 默克专利股份有限公司 通过湿式化学蚀刻以改善金属结构制造的组合物和方法
CN114874384A (zh) * 2022-01-21 2022-08-09 南通林格橡塑制品有限公司 一种193nm光刻胶成膜树脂及其制备方法和正型光刻胶组合物

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194834A (ja) 1982-06-17 1983-11-12 Tokyo Ohka Kogyo Co Ltd シクロヘキサノンの精製方法
JP2799610B2 (ja) 1989-12-15 1998-09-21 ジェイエスアール株式会社 感放射線性樹脂組成物
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JP3141365B2 (ja) 1992-07-24 2001-03-05 ジェイエスアール株式会社 ポジ型感放射線性樹脂組成物溶液
DE69322946T2 (de) 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
JP3206989B2 (ja) 1992-11-13 2001-09-10 富士写真フイルム株式会社 ポジ型感光性材料
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH06289614A (ja) 1993-04-06 1994-10-18 Tokyo Ohka Kogyo Co Ltd ネガ型感放射線レジスト組成物
JPH07134412A (ja) 1993-11-11 1995-05-23 Tokyo Ohka Kogyo Co Ltd ネガ型放射線感応性レジスト組成物
US5736296A (en) 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
EP0718317B1 (en) 1994-12-20 2000-02-23 Olin Microelectronic Chemicals, Inc. Photoresist compositions
JP3046225B2 (ja) 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JPH0968795A (ja) 1995-08-31 1997-03-11 Toshiba Corp 感光性組成物およびその製造方法
US5719003A (en) 1995-09-27 1998-02-17 Shipley Company, L.L.C. Method for increasing the differential solubility of an imaged photoresist through hydroxy group blocking via reaction with vinyl ethers
DE69612182T3 (de) 1996-02-09 2005-08-04 Wako Pure Chemical Industries, Ltd. Polymer und Resistmaterial
JP3360267B2 (ja) 1996-04-24 2002-12-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US5942367A (en) 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3528512B2 (ja) 1996-04-24 2004-05-17 信越化学工業株式会社 架橋基を有する高分子化合物の製造方法
JPH1031309A (ja) 1996-07-17 1998-02-03 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH10268508A (ja) 1997-01-27 1998-10-09 Shin Etsu Chem Co Ltd 部分水素化高分子化合物及び化学増幅ポジ型レジスト材料
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
EP0942329B1 (en) 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists
US6027804A (en) 1997-11-18 2000-02-22 Solutia Inc. Superabsorbing compositions and processes for preparing same
US5985507A (en) 1998-02-18 1999-11-16 Olin Microelectronic Chemicals, Inc. Selected high thermal novolaks and positive-working radiation-sensitive compositions
US6303263B1 (en) 1998-02-25 2001-10-16 International Business Machines Machines Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
US6136504A (en) 1998-03-30 2000-10-24 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US6159653A (en) 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
US6072006A (en) 1998-11-06 2000-06-06 Arch Specialty Chemicals, Inc. Preparation of partially cross-linked polymers and their use in pattern formation
US6900138B1 (en) 1999-03-01 2005-05-31 Micron Technology, Inc. Oxygen plasma treatment for nitride surface to reduce photo footing
US6365321B1 (en) 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP2001042531A (ja) 1999-07-26 2001-02-16 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP4135276B2 (ja) 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4070393B2 (ja) 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
EP1126321A1 (en) 2000-02-10 2001-08-22 Shipley Company LLC Positive photoresists containing crosslinked polymers
TWI228203B (en) 2000-03-22 2005-02-21 Shinetsu Chemical Co Chemical amplification positive resist material and method for forming pattern
JP2002072477A (ja) 2000-06-12 2002-03-12 Jsr Corp 感放射線性樹脂組成物
JP3956088B2 (ja) 2000-07-19 2007-08-08 信越化学工業株式会社 化学増幅ポジ型レジスト材料
KR100733536B1 (ko) 2000-07-19 2007-06-28 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 재료
DE60143334D1 (de) 2000-08-21 2010-12-09 Tokyo Ohka Kogyo Co Ltd Vernetzte, positiv arbeitende Photoresist-Zusammensetzung
JP4144726B2 (ja) 2000-08-21 2008-09-03 東京応化工業株式会社 架橋形成ポジ型ホトレジスト組成物
JP2002072479A (ja) 2000-08-24 2002-03-12 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP4190167B2 (ja) 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
JP2002278054A (ja) 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002278053A (ja) 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2002341538A (ja) 2001-05-11 2002-11-27 Fuji Photo Film Co Ltd 電子線またはｘ線用ポジ型レジスト組成物
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
EP1415968A4 (en) 2001-07-13 2004-12-08 Kyowa Yuka Kk METHOD FOR PRODUCING AN ETHER CONNECTION
JP4554122B2 (ja) 2001-08-06 2010-09-29 東京応化工業株式会社 化学増幅型ポジ型液晶素子用レジスト組成物
JP2003084437A (ja) 2001-09-11 2003-03-19 Toray Ind Inc ポジ型感放射線性組成物
JP4057807B2 (ja) 2001-12-03 2008-03-05 東京応化工業株式会社 微細レジストパターン形成方法
TWI265376B (en) 2002-03-20 2006-11-01 Sumitomo Chemical Co Positive resist composition
JP3927854B2 (ja) 2002-04-23 2007-06-13 キヤノン株式会社 インクジェット記録ヘッド
TWI307819B (en) 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
AU2003289430A1 (en) 2002-12-26 2004-07-22 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US6852465B2 (en) 2003-03-21 2005-02-08 Clariant International Ltd. Photoresist composition for imaging thick films
WO2004092831A2 (en) 2003-04-09 2004-10-28 Rohm And Haas, Electronic Materials, L.L.C. Photoresists and methods for use thereof
JP4306314B2 (ja) 2003-04-18 2009-07-29 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7358408B2 (en) 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
KR100688109B1 (ko) 2003-05-20 2007-03-02 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법
US20040265733A1 (en) 2003-06-30 2004-12-30 Houlihan Francis M. Photoacid generators
JP4131864B2 (ja) * 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法
KR100881307B1 (ko) 2004-02-20 2009-02-03 도오꾜오까고오교 가부시끼가이샤 패턴 형성 재료용 기재, 포지티브형 레지스트 조성물 및레지스트 패턴 형성 방법
US20050271974A1 (en) 2004-06-08 2005-12-08 Rahman M D Photoactive compounds
US7255970B2 (en) 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
JP4893270B2 (ja) 2006-11-29 2012-03-07 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US8715918B2 (en) * 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
JP5639772B2 (ja) * 2010-03-10 2014-12-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法
US8841062B2 (en) * 2012-12-04 2014-09-23 Az Electronic Materials (Luxembourg) S.A.R.L. Positive working photosensitive material
CN104460232B (zh) * 2013-09-24 2019-11-15 住友化学株式会社 光致抗蚀剂组合物
US9383644B2 (en) * 2014-09-18 2016-07-05 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications

Also Published As

Publication number Publication date
KR102261808B1 (ko) 2021-06-07
CN109844641B (zh) 2022-10-11
CN109844641A (zh) 2019-06-04
JP2019530903A (ja) 2019-10-24
US20200183278A1 (en) 2020-06-11
EP3497519B1 (en) 2020-11-25
US11385543B2 (en) 2022-07-12
EP3497519A1 (en) 2019-06-19
TWI717543B (zh) 2021-02-01
KR20190039990A (ko) 2019-04-16
TW201818157A (zh) 2018-05-16
WO2018029142A1 (en) 2018-02-15
JP6818888B2 (ja) 2021-01-20

Similar Documents

Publication Publication Date Title
PT3497519T (pt) Resiste amplificado quimicamente de película espessa ambientalmente estável
GB201916874D0 (en) .
SG11201807876SA (en) Photosensitive film
GB201708396D0 (en) Film
CL2020000951A1 (es) Célula.
CL2017002511S1 (es) Contenedor.
CL2017002510S1 (es) Contenedor.
SI3468796T1 (sl) Biorazgradljiva folija
IT201600084952A1 (it) Coglifrutta.
EP3514580A4 (en) FUNCTIONAL FILM
EP3508519A4 (en) MOVIE
EP3305397A4 (en) Porous film
CL2016001885A1 (es) Bolsa hidrodegradable.
EP3497518A4 (en) PROJECTOR
IT201600117182A1 (it) Ribobinatrice.
IT201600118572A1 (it) Film multistrato.
EP3412966A4 (en) PROJECTOR
ITUA20161830A1 (it) Sedia a rotelle.
EP3407131A4 (en) PROJECTOR
BR112016018245A2 (pt) estruturas de película de multicamadas.
EP3421543A4 (en) MOVIE
RS64054B1 (sr) Aktivni polistirenski film
GB201916765D0 (en) .
CL2018000448S1 (es) Envase.
CL2018000447S1 (es) Envase.