PT3334260T - Material de núcleo, pacote de semicondutores e método de formação de elétrodo de bossa - Google Patents

Material de núcleo, pacote de semicondutores e método de formação de elétrodo de bossa

Info

Publication number
PT3334260T
PT3334260T PT172054959T PT17205495T PT3334260T PT 3334260 T PT3334260 T PT 3334260T PT 172054959 T PT172054959 T PT 172054959T PT 17205495 T PT17205495 T PT 17205495T PT 3334260 T PT3334260 T PT 3334260T
Authority
PT
Portugal
Prior art keywords
core material
forming method
semiconductor package
bump electrode
bump
Prior art date
Application number
PT172054959T
Other languages
English (en)
Original Assignee
Senju Metal Industry Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co filed Critical Senju Metal Industry Co
Publication of PT3334260T publication Critical patent/PT3334260T/pt

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
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    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/13655—Nickel [Ni] as principal constituent
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    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13657—Cobalt [Co] as principal constituent
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    • H01L2924/30—Technical effects
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    • H01L2924/384—Bump effects
    • H01L2924/3841—Solder bridging

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  • Electroplating And Plating Baths Therefor (AREA)
PT172054959T 2016-12-07 2017-12-05 Material de núcleo, pacote de semicondutores e método de formação de elétrodo de bossa PT3334260T (pt)

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JP6376266B1 (ja) 2017-10-24 2018-08-22 千住金属工業株式会社 核材料およびはんだ継手およびバンプ電極の形成方法
JP2018140436A (ja) * 2017-12-19 2018-09-13 千住金属工業株式会社 はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
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KR102023821B1 (ko) 2019-09-20
CN108172523B (zh) 2019-03-01
JP2018089677A (ja) 2018-06-14
KR20180065952A (ko) 2018-06-18
JP6217836B1 (ja) 2017-10-25
CN108172523A (zh) 2018-06-15
TWI648416B (zh) 2019-01-21
TW201823482A (zh) 2018-07-01
KR20190040951A (ko) 2019-04-19
US20180174991A1 (en) 2018-06-21
EP3334260B1 (en) 2020-01-29
US10381319B2 (en) 2019-08-13

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