HK1221569A1 - 晶圓級封裝式半導體裝置，及其製造方法 - Google Patents

晶圓級封裝式半導體裝置，及其製造方法

Info

Publication number
HK1221569A1
HK1221569A1 HK16109501.5A HK16109501A HK1221569A1 HK 1221569 A1 HK1221569 A1 HK 1221569A1 HK 16109501 A HK16109501 A HK 16109501A HK 1221569 A1 HK1221569 A1 HK 1221569A1
Authority
HK
Hong Kong
Prior art keywords
wafer
semiconductor device
encapsulated semiconductor
fabricating same
level encapsulated
Prior art date
Application number
HK16109501.5A
Other languages
English (en)
Inventor
Lin Wei-Feng
Tu Chih-Hung
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of HK1221569A1 publication Critical patent/HK1221569A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK16109501.5A 2014-11-14 2016-08-10 晶圓級封裝式半導體裝置，及其製造方法 HK1221569A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/542,169 US9450004B2 (en) 2014-11-14 2014-11-14 Wafer-level encapsulated semiconductor device, and method for fabricating same

Publications (1)

Publication Number Publication Date
HK1221569A1 true HK1221569A1 (zh) 2017-06-02

Family

ID=55962394

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16109501.5A HK1221569A1 (zh) 2014-11-14 2016-08-10 晶圓級封裝式半導體裝置，及其製造方法

Country Status (4)

Country Link
US (1) US9450004B2 (zh)
CN (1) CN105609514B (zh)
HK (1) HK1221569A1 (zh)
TW (1) TWI566393B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10717645B2 (en) * 2014-12-17 2020-07-21 Robert Bosch Gmbh Exposed-die mold package for a sensor and method for encapsulating a sensor that interacts with the environment
JP6991739B2 (ja) * 2017-05-12 2022-01-13 キヤノン株式会社 半導体装置の製造方法
US11164900B2 (en) * 2018-10-08 2021-11-02 Omnivision Technologies, Inc. Image sensor chip-scale-package
US11049894B2 (en) * 2018-11-07 2021-06-29 Omnivision Technologies, Inc. Solder mask dam design
WO2020098211A1 (zh) * 2018-11-12 2020-05-22 通富微电子股份有限公司 一种半导体芯片封装方法及半导体封装器件
WO2020098214A1 (zh) * 2018-11-12 2020-05-22 通富微电子股份有限公司 一种半导体芯片封装方法及半导体封装器件
KR20210080718A (ko) 2019-12-20 2021-07-01 삼성전자주식회사 반도체 패키지
CN111736259A (zh) * 2020-07-24 2020-10-02 歌尔股份有限公司 波导镜片模组及其制作方法、ar设备
CN114242870B (zh) * 2021-12-22 2022-09-20 鸿利智汇集团股份有限公司 一种晶片支架、晶片支架板以及晶片的封装方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US7074638B2 (en) * 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
EP1686617A3 (en) * 2002-07-29 2007-01-03 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing the same
US7378724B2 (en) 2005-03-24 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Cavity structure for semiconductor structures
US7569409B2 (en) 2007-01-04 2009-08-04 Visera Technologies Company Limited Isolation structures for CMOS image sensor chip scale packages
US7528420B2 (en) 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same
JP2009049973A (ja) * 2007-08-17 2009-03-05 Samsung Electro-Mechanics Co Ltd Ｃｍｏｓイメージセンサパッケージ
US8569180B2 (en) 2008-07-08 2013-10-29 MCube Inc. Method and structure of wafer level encapsulation of integrated circuits with cavity
US8796800B2 (en) * 2011-11-21 2014-08-05 Optiz, Inc. Interposer package for CMOS image sensor and method of making same

Also Published As

Publication number Publication date
US20160141320A1 (en) 2016-05-19
CN105609514B (zh) 2019-02-12
CN105609514A (zh) 2016-05-25
TWI566393B (zh) 2017-01-11
US9450004B2 (en) 2016-09-20
TW201630171A (zh) 2016-08-16

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