Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
  • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
  • G11C11/4125—Cells incorporating circuit means for protecting against loss of information
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
  • H01L29/7881—Programmable transistors with only two possible levels of programmation
  • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
  • Y10S257/903—FET configuration adapted for use as static memory cell
  • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Applications Claiming Priority (2)

Publications (3)

Family

ID=24325382

Family Applications (1)

Country Status (15)

Families Citing this family (29)

Family Cites Families (16)

• 1984
  • 1984-02-17 US US06/581,482 patent/US4571704A/en not_active Expired - Lifetime
• 1985
  • 1985-01-21 IN IN35/DEL/85A patent/IN162453B/en unknown
  • 1985-02-01 IL IL74219A patent/IL74219A/xx not_active IP Right Cessation
  • 1985-02-05 WO PCT/US1985/000174 patent/WO1985003798A1/en active IP Right Grant
  • 1985-02-05 AT AT85901181T patent/ATE43452T1/de not_active IP Right Cessation
  • 1985-02-05 EP EP85901181A patent/EP0172879B1/en not_active Expired
  • 1985-02-05 JP JP60500845A patent/JPH0732241B2/ja not_active Expired - Lifetime
  • 1985-02-05 DE DE8585901181T patent/DE3570546D1/de not_active Expired
  • 1985-02-05 AU AU39390/85A patent/AU564114B2/en not_active Ceased
  • 1985-02-15 IT IT47694/85A patent/IT1182206B/it active
  • 1985-02-15 ES ES540446A patent/ES8701405A1/es not_active Expired
  • 1985-09-03 DK DK401885A patent/DK163392C/da not_active IP Right Cessation
  • 1985-09-27 NO NO85853815A patent/NO166986C/no unknown
• 1989
  • 1989-07-12 SG SG416/89A patent/SG41689G/en unknown
  • 1989-09-21 HK HK760/89A patent/HK76089A/xx not_active IP Right Cessation

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