NO327017B1 - Uniform gassfordeling i plasmakilde med stort omfang - Google Patents
Uniform gassfordeling i plasmakilde med stort omfang Download PDFInfo
- Publication number
- NO327017B1 NO327017B1 NO20021492A NO20021492A NO327017B1 NO 327017 B1 NO327017 B1 NO 327017B1 NO 20021492 A NO20021492 A NO 20021492A NO 20021492 A NO20021492 A NO 20021492A NO 327017 B1 NO327017 B1 NO 327017B1
- Authority
- NO
- Norway
- Prior art keywords
- chamber
- stated
- magnetic core
- field
- plasma
- Prior art date
Links
- 238000009826 distribution Methods 0.000 title claims description 38
- 230000005291 magnetic effect Effects 0.000 claims abstract description 169
- 238000012545 processing Methods 0.000 claims abstract description 24
- 230000001939 inductive effect Effects 0.000 claims abstract description 17
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 238000002347 injection Methods 0.000 claims description 58
- 239000007924 injection Substances 0.000 claims description 58
- 238000009832 plasma treatment Methods 0.000 claims description 32
- 238000004804 winding Methods 0.000 claims description 31
- 238000013461 design Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000011109 contamination Methods 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims 1
- 239000011162 core material Substances 0.000 description 119
- 239000007789 gas Substances 0.000 description 108
- 210000002381 plasma Anatomy 0.000 description 82
- 239000000758 substrate Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000004907 flux Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Treatment Of Fiber Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99402374A EP1089319B1 (en) | 1999-09-29 | 1999-09-29 | Uniform gas distribution in large area plasma treatment device |
| PCT/EP2000/009996 WO2001024220A2 (en) | 1999-09-29 | 2000-09-18 | Uniform gas distribution in large area plasma treatment device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20021492D0 NO20021492D0 (no) | 2002-03-26 |
| NO20021492L NO20021492L (no) | 2002-05-27 |
| NO327017B1 true NO327017B1 (no) | 2009-04-06 |
Family
ID=8242127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20021492A NO327017B1 (no) | 1999-09-29 | 2002-03-26 | Uniform gassfordeling i plasmakilde med stort omfang |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6682630B1 (da) |
| EP (1) | EP1089319B1 (da) |
| JP (1) | JP2003510780A (da) |
| KR (1) | KR100797206B1 (da) |
| AT (1) | ATE420453T1 (da) |
| CA (1) | CA2386078C (da) |
| DE (1) | DE69940260D1 (da) |
| DK (1) | DK1089319T3 (da) |
| ES (1) | ES2320501T3 (da) |
| IL (1) | IL148912A0 (da) |
| NO (1) | NO327017B1 (da) |
| WO (1) | WO2001024220A2 (da) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
| PT1253216E (pt) * | 2001-04-27 | 2004-04-30 | Europ Economic Community | Metodo e aparelhagem para tratamento sequencial por plasma |
| KR100422488B1 (ko) * | 2001-07-09 | 2004-03-12 | 에이엔 에스 주식회사 | 플라즈마 처리 장치 |
| JP3886424B2 (ja) * | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
| JP2004047696A (ja) * | 2002-07-11 | 2004-02-12 | Matsushita Electric Ind Co Ltd | プラズマドーピング方法及び装置、整合回路 |
| JP2005536042A (ja) * | 2002-08-08 | 2005-11-24 | トリコン テクノロジーズ リミティド | シャワーヘッドの改良 |
| US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
| US7318947B1 (en) | 2004-08-31 | 2008-01-15 | Western Digital (Fremont), Llc | Method and apparatus for controlling magnetostriction in a spin valve sensor |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| EP1662546A1 (en) | 2004-11-25 | 2006-05-31 | The European Community, represented by the European Commission | Inductively coupled plasma processing apparatus |
| KR100760026B1 (ko) * | 2005-12-13 | 2007-09-20 | 주식회사 뉴파워 프라즈마 | 플라즈마 발생기를 위한 페라이트 코어 조립체 및 이를구비한 플라즈마 처리 시스템 |
| US20070170155A1 (en) * | 2006-01-20 | 2007-07-26 | Fink Steven T | Method and apparatus for modifying an etch profile |
| KR100760830B1 (ko) * | 2006-03-21 | 2007-09-21 | 주식회사 아토 | 자성체가 삽입된 공동 전극 및 이를 이용한 가스 분리형샤워헤드 |
| EP2087778A4 (en) | 2006-08-22 | 2010-11-17 | Mattson Tech Inc | INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY |
| US8992725B2 (en) | 2006-08-28 | 2015-03-31 | Mattson Technology, Inc. | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil |
| DE102007026349A1 (de) * | 2007-06-06 | 2008-12-11 | Aixtron Ag | Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler |
| US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
| JP5270751B2 (ja) * | 2009-07-31 | 2013-08-21 | キヤノンアネルバ株式会社 | プラズマ処理装置および磁気記録媒体の製造方法 |
| US20120160806A1 (en) * | 2009-08-21 | 2012-06-28 | Godyak Valery A | Inductive plasma source |
| JP5635367B2 (ja) * | 2010-10-29 | 2014-12-03 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| CN102548180A (zh) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 介质窗、电感耦合线圈组件及等离子体处理设备 |
| US9129778B2 (en) * | 2011-03-18 | 2015-09-08 | Lam Research Corporation | Fluid distribution members and/or assemblies |
| KR101886740B1 (ko) * | 2011-11-01 | 2018-09-11 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 유기 발광 표시 장치 제조 방법 |
| TWI596644B (zh) * | 2012-03-22 | 2017-08-21 | 藍姆研究公司 | 流體分配元件組件及電漿處理設備 |
| JP2014055785A (ja) * | 2012-09-11 | 2014-03-27 | Shimadzu Corp | プラズマ用高周波電源及びそれを用いたｉｃｐ発光分光分析装置 |
| KR20140089458A (ko) * | 2013-01-04 | 2014-07-15 | 피에스케이 주식회사 | 플라즈마 챔버 및 기판 처리 장치 |
| KR102125028B1 (ko) * | 2015-04-30 | 2020-06-19 | (주) 엔피홀딩스 | 마그네틱 코어 냉각용 냉각키트 및 이를 구비한 플라즈마 반응기 |
| US11037764B2 (en) * | 2017-05-06 | 2021-06-15 | Applied Materials, Inc. | Modular microwave source with local Lorentz force |
| US11094508B2 (en) | 2018-12-14 | 2021-08-17 | Applied Materials, Inc. | Film stress control for plasma enhanced chemical vapor deposition |
| KR102409312B1 (ko) * | 2020-09-28 | 2022-06-16 | (주)아이작리서치 | 플라즈마 원자층 증착 장치 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2603331B2 (ja) * | 1989-02-21 | 1997-04-23 | 日本電信電話株式会社 | パルスガスノズル装置およびパルスガスノズル反応装置 |
| JPH0689796A (ja) * | 1992-09-09 | 1994-03-29 | Kobe Steel Ltd | Ｐｉｇ型イオン源 |
| US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
| JP3468859B2 (ja) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | 気相処理装置及び気相処理方法 |
| US5885356A (en) * | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
| JP3436608B2 (ja) * | 1995-03-17 | 2003-08-11 | 株式会社サムコインターナショナル研究所 | 光導波路チップの製造方法 |
| US5683517A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Plasma reactor with programmable reactant gas distribution |
| JPH09180897A (ja) * | 1995-12-12 | 1997-07-11 | Applied Materials Inc | 高密度プラズマリアクタのためのガス供給装置 |
| JP2929275B2 (ja) * | 1996-10-16 | 1999-08-03 | 株式会社アドテック | 透磁コアを有する誘導結合型−平面状プラズマの発生装置 |
| JPH10134997A (ja) * | 1996-10-24 | 1998-05-22 | Samsung Electron Co Ltd | ２次電位による放電を除去したプラズマ処理装置 |
| JP3582287B2 (ja) * | 1997-03-26 | 2004-10-27 | 株式会社日立製作所 | エッチング装置 |
| EP1209721B1 (en) * | 1997-10-10 | 2007-12-05 | European Community | Inductive type plasma processing chamber |
-
1999
- 1999-09-29 AT AT99402374T patent/ATE420453T1/de active
- 1999-09-29 DK DK99402374T patent/DK1089319T3/da active
- 1999-09-29 ES ES99402374T patent/ES2320501T3/es not_active Expired - Lifetime
- 1999-09-29 EP EP99402374A patent/EP1089319B1/en not_active Expired - Lifetime
- 1999-09-29 DE DE69940260T patent/DE69940260D1/de not_active Expired - Lifetime
-
2000
- 2000-09-18 CA CA2386078A patent/CA2386078C/en not_active Expired - Fee Related
- 2000-09-18 WO PCT/EP2000/009996 patent/WO2001024220A2/en active Application Filing
- 2000-09-18 US US10/088,512 patent/US6682630B1/en not_active Expired - Fee Related
- 2000-09-18 JP JP2001527314A patent/JP2003510780A/ja active Pending
- 2000-09-18 KR KR1020027003754A patent/KR100797206B1/ko not_active IP Right Cessation
- 2000-09-18 IL IL14891200A patent/IL148912A0/xx not_active IP Right Cessation
-
2002
- 2002-03-26 NO NO20021492A patent/NO327017B1/no not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001024220A2 (en) | 2001-04-05 |
| CA2386078A1 (en) | 2001-04-05 |
| CA2386078C (en) | 2010-03-30 |
| JP2003510780A (ja) | 2003-03-18 |
| US6682630B1 (en) | 2004-01-27 |
| WO2001024220A3 (en) | 2001-06-21 |
| EP1089319B1 (en) | 2009-01-07 |
| KR100797206B1 (ko) | 2008-01-22 |
| KR20020048415A (ko) | 2002-06-22 |
| NO20021492D0 (no) | 2002-03-26 |
| ATE420453T1 (de) | 2009-01-15 |
| DE69940260D1 (de) | 2009-02-26 |
| IL148912A0 (en) | 2002-09-12 |
| EP1089319A1 (en) | 2001-04-04 |
| NO20021492L (no) | 2002-05-27 |
| ES2320501T3 (es) | 2009-05-22 |
| DK1089319T3 (da) | 2009-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CHAD | Change of the owner's name or address (par. 44 patent law, par. patentforskriften) |
Owner name: THE EUROPEAN COMMUNITY REPRESENTED BY THE EU, BE |
|
| MM1K | Lapsed by not paying the annual fees |