DK1089319T3 - Ensartet gasfordeling i plasmaforarbejdningsindretning med stort areal - Google Patents

Ensartet gasfordeling i plasmaforarbejdningsindretning med stort areal

Info

Publication number
DK1089319T3
DK1089319T3 DK99402374T DK99402374T DK1089319T3 DK 1089319 T3 DK1089319 T3 DK 1089319T3 DK 99402374 T DK99402374 T DK 99402374T DK 99402374 T DK99402374 T DK 99402374T DK 1089319 T3 DK1089319 T3 DK 1089319T3
Authority
DK
Denmark
Prior art keywords
plasma processing
processing device
gas distribution
uniform gas
area plasma
Prior art date
Application number
DK99402374T
Other languages
English (en)
Inventor
Pascal Colpo
Francois Rossi
Original Assignee
Europ Economic Community
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Economic Community filed Critical Europ Economic Community
Application granted granted Critical
Publication of DK1089319T3 publication Critical patent/DK1089319T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatment Of Fiber Materials (AREA)
DK99402374T 1999-09-29 1999-09-29 Ensartet gasfordeling i plasmaforarbejdningsindretning med stort areal DK1089319T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99402374A EP1089319B1 (en) 1999-09-29 1999-09-29 Uniform gas distribution in large area plasma treatment device

Publications (1)

Publication Number Publication Date
DK1089319T3 true DK1089319T3 (da) 2009-04-06

Family

ID=8242127

Family Applications (1)

Application Number Title Priority Date Filing Date
DK99402374T DK1089319T3 (da) 1999-09-29 1999-09-29 Ensartet gasfordeling i plasmaforarbejdningsindretning med stort areal

Country Status (12)

Country Link
US (1) US6682630B1 (da)
EP (1) EP1089319B1 (da)
JP (1) JP2003510780A (da)
KR (1) KR100797206B1 (da)
AT (1) ATE420453T1 (da)
CA (1) CA2386078C (da)
DE (1) DE69940260D1 (da)
DK (1) DK1089319T3 (da)
ES (1) ES2320501T3 (da)
IL (1) IL148912A0 (da)
NO (1) NO327017B1 (da)
WO (1) WO2001024220A2 (da)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
DK1253216T3 (da) * 2001-04-27 2004-03-22 Europ Economic Community Fremgangsmåde og apparat til sekventiel plasmabehandling
KR100422488B1 (ko) * 2001-07-09 2004-03-12 에이엔 에스 주식회사 플라즈마 처리 장치
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP2004047696A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
AU2003282533A1 (en) * 2002-08-08 2004-02-25 Trikon Technologies Limited Improvements to showerheads
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7318947B1 (en) 2004-08-31 2008-01-15 Western Digital (Fremont), Llc Method and apparatus for controlling magnetostriction in a spin valve sensor
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
KR100760026B1 (ko) * 2005-12-13 2007-09-20 주식회사 뉴파워 프라즈마 플라즈마 발생기를 위한 페라이트 코어 조립체 및 이를구비한 플라즈마 처리 시스템
US20070170155A1 (en) * 2006-01-20 2007-07-26 Fink Steven T Method and apparatus for modifying an etch profile
KR100760830B1 (ko) * 2006-03-21 2007-09-21 주식회사 아토 자성체가 삽입된 공동 전극 및 이를 이용한 가스 분리형샤워헤드
US8920600B2 (en) * 2006-08-22 2014-12-30 Mattson Technology, Inc. Inductive plasma source with high coupling efficiency
US8992725B2 (en) 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
DE102007026349A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
WO2011013385A1 (ja) * 2009-07-31 2011-02-03 キヤノンアネルバ株式会社 プラズマ処理装置および磁気記録媒体の製造方法
WO2011022612A2 (en) * 2009-08-21 2011-02-24 Mattson Technology, Inc. Inductive plasma source
JP5635367B2 (ja) * 2010-10-29 2014-12-03 株式会社イー・エム・ディー プラズマ処理装置
CN102548180A (zh) * 2010-12-27 2012-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 介质窗、电感耦合线圈组件及等离子体处理设备
US9129778B2 (en) * 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
KR101886740B1 (ko) * 2011-11-01 2018-09-11 삼성디스플레이 주식회사 기상 증착 장치 및 유기 발광 표시 장치 제조 방법
TWI596644B (zh) * 2012-03-22 2017-08-21 藍姆研究公司 流體分配元件組件及電漿處理設備
JP2014055785A (ja) * 2012-09-11 2014-03-27 Shimadzu Corp プラズマ用高周波電源及びそれを用いたｉｃｐ発光分光分析装置
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
KR102125028B1 (ko) * 2015-04-30 2020-06-19 (주) 엔피홀딩스 마그네틱 코어 냉각용 냉각키트 및 이를 구비한 플라즈마 반응기
US11037764B2 (en) 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
US11094508B2 (en) * 2018-12-14 2021-08-17 Applied Materials, Inc. Film stress control for plasma enhanced chemical vapor deposition
KR102409312B1 (ko) * 2020-09-28 2022-06-16 (주)아이작리서치 플라즈마 원자층 증착 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603331B2 (ja) * 1989-02-21 1997-04-23 日本電信電話株式会社 パルスガスノズル装置およびパルスガスノズル反応装置
JPH0689796A (ja) * 1992-09-09 1994-03-29 Kobe Steel Ltd Ｐｉｇ型イオン源
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3436608B2 (ja) * 1995-03-17 2003-08-11 株式会社サムコインターナショナル研究所 光導波路チップの製造方法
US5683517A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
JPH09180897A (ja) * 1995-12-12 1997-07-11 Applied Materials Inc 高密度プラズマリアクタのためのガス供給装置
JP2929275B2 (ja) * 1996-10-16 1999-08-03 株式会社アドテック 透磁コアを有する誘導結合型−平面状プラズマの発生装置
JPH10134997A (ja) * 1996-10-24 1998-05-22 Samsung Electron Co Ltd ２次電位による放電を除去したプラズマ処理装置
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
EP1209721B1 (en) * 1997-10-10 2007-12-05 European Community Inductive type plasma processing chamber

Also Published As

Publication number Publication date
CA2386078C (en) 2010-03-30
ES2320501T3 (es) 2009-05-22
EP1089319B1 (en) 2009-01-07
NO20021492L (no) 2002-05-27
JP2003510780A (ja) 2003-03-18
KR100797206B1 (ko) 2008-01-22
WO2001024220A3 (en) 2001-06-21
EP1089319A1 (en) 2001-04-04
ATE420453T1 (de) 2009-01-15
DE69940260D1 (de) 2009-02-26
NO20021492D0 (no) 2002-03-26
IL148912A0 (en) 2002-09-12
KR20020048415A (ko) 2002-06-22
US6682630B1 (en) 2004-01-27
NO327017B1 (no) 2009-04-06
WO2001024220A2 (en) 2001-04-05
CA2386078A1 (en) 2001-04-05

Similar Documents

Publication Publication Date Title
DK1089319T3 (da) Ensartet gasfordeling i plasmaforarbejdningsindretning med stort areal
WO1999019898A3 (en) Method and apparatus to produce large inductive plasma for plasma processing
ATE543199T1 (de) Plasmakammer mit entladung induzierender brücke
SE9903185D0 (sv) Terapeutisk metod och anordning baserad på magnetism
CA2279539A1 (en) Near field electromagnetic proximity determination
DE50106139D1 (de) VORRICHTUNG ZUR ANPASSUNG EINER IONENSTRAHLFLECKGRÖssE IN DER TUMORBESTRAHLUNG
DK0413282T3 (da) Fremgangsmåde og apparat til tilvejebringelse af magnetisk koblet plant plasma
EP0977470A3 (en) Method and apparatus for generating induced plasma
WO2004091721A8 (en) Method and apparatus for influencing magnetic particles
TW200511902A (en) Magnetic enhancement for mechanical confinement of plasma
EP1205761A3 (en) Magnetic field adjusting apparatus, magnetic field adjusting method and recording medium
DK23791A (da) Billeddannelse ved magnetisk resonans
ATE314115T1 (de) Gerät zum stören des überlebens pathologischer zellen
IT1317862B1 (it) Coniugati di acidi biliari con chelati complessi di ioni metallici eloro uso.
DE69401479D1 (de) Neutronenröhre mit magnetischem Elektroneneinschluss durch Dauermagneten und dessen Herstellungsverfahren
AU5278499A (en) Device for treatment with magnetic fields
WO2008146188A3 (en) Reaction controller for electrolysis apparatus and method of using same
EP1623048A4 (en) METHODS, SYSTEMS AND DEVICES FOR EVALUATING THERMAL TREATMENT
DK0648140T3 (da) Apparat til impulsagtig magnetisk induktion
JPS5398795A (en) Exciting method for superconduction magnet
GB2427695A (en) Magnetic Resonance Apparatus And Method
AU1141701A (en) Device and method for minimising electromagnetic emissions of technical emitters
WO2002009134A3 (de) Verfahren und vorrichtung zum erzeugen elektromagnetischer felder hoher feldstärke und feldstärkehomogenität
JPS6451626A (en) Hydrogenating method to silicon thin-film transistor
Clarenbach et al. Characterisation of a helicon source with multipole magnetic confinement