NO321946B1 - Smeltedigel med beskyttende lag av silisium og anvendelse av det samme - Google Patents
Smeltedigel med beskyttende lag av silisium og anvendelse av det samme Download PDFInfo
- Publication number
- NO321946B1 NO321946B1 NO19993466A NO993466A NO321946B1 NO 321946 B1 NO321946 B1 NO 321946B1 NO 19993466 A NO19993466 A NO 19993466A NO 993466 A NO993466 A NO 993466A NO 321946 B1 NO321946 B1 NO 321946B1
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- silicon nitride
- maximum
- protective layer
- content
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 82
- 239000010703 silicon Substances 0.000 title claims description 81
- 239000011241 protective layer Substances 0.000 title claims description 15
- 230000008018 melting Effects 0.000 title description 3
- 238000002844 melting Methods 0.000 title description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 79
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- 239000000843 powder Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- -1 ferrous metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 238000000034 method Methods 0.000 description 12
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010310 metallurgical process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 230000002110 toxicologic effect Effects 0.000 description 1
- 231100000027 toxicology Toxicity 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/282—Carbides, silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19704371 | 1997-02-06 | ||
| PCT/EP1998/000333 WO1998035075A1 (fr) | 1997-02-06 | 1998-01-22 | Creuset muni de couches de protection en silicium, procede d'application la couche de protection en silicium et utilisation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO993466L NO993466L (no) | 1999-07-14 |
| NO993466D0 NO993466D0 (no) | 1999-07-14 |
| NO321946B1 true NO321946B1 (no) | 2006-07-24 |
Family
ID=7819403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19993466A NO321946B1 (no) | 1997-02-06 | 1999-07-14 | Smeltedigel med beskyttende lag av silisium og anvendelse av det samme |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6165425A (fr) |
| EP (1) | EP0963464B1 (fr) |
| JP (2) | JP2001510434A (fr) |
| DE (1) | DE59801041D1 (fr) |
| NO (1) | NO321946B1 (fr) |
| WO (1) | WO1998035075A1 (fr) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6491971B2 (en) * | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
| AU2002230671A1 (en) * | 2000-11-15 | 2002-05-27 | Gt Equipment Technologies Inc. | Improved crucible coating system |
| NO317080B1 (no) * | 2002-08-15 | 2004-08-02 | Crusin As | Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler |
| US20040187767A1 (en) * | 2002-10-24 | 2004-09-30 | Intel Corporation | Device and method for multicrystalline silicon wafers |
| UA81278C2 (en) * | 2002-12-06 | 2007-12-25 | Vessel for holding a silicon and method for its making | |
| ES2214139B2 (es) * | 2003-02-21 | 2005-03-16 | Universidade De Santiago De Compostela | Procedimiento de obtencion de recubrimientos superficiales de nitruro de silicio sobre piezas y componentes ceramicos. |
| FR2853913B1 (fr) * | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
| CN100372059C (zh) * | 2003-12-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | 形成半导体材料晶片的方法及其结构 |
| WO2006002779A1 (fr) * | 2004-06-30 | 2006-01-12 | Deutsche Solar Ag | Procede de production d'une coquille a revetement antiadhesif |
| DE102005028435B4 (de) * | 2004-06-30 | 2011-05-12 | Deutsche Solar Ag | Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung |
| WO2006005416A1 (fr) * | 2004-07-08 | 2006-01-19 | Deutsche Solar Ag | Procede pour realiser une coquille presentant un revetement anti-adhesif |
| DE102005029039B4 (de) * | 2004-07-08 | 2012-07-12 | Deutsche Solar Gmbh | Herstellungsverfahren für Kokille mit Antihaftbeschichtung |
| US7540919B2 (en) * | 2005-04-01 | 2009-06-02 | Gt Solar Incorporated | Solidification of crystalline silicon from reusable crucible molds |
| TWI400369B (zh) * | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
| DE102005050593A1 (de) * | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
| US7572334B2 (en) | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| DE102006003819A1 (de) * | 2006-01-26 | 2007-08-02 | Wacker Chemie Ag | Keramischer Formkörper mit hochreiner Si3N4-Beschichtung, Verfahren zu seiner Herstellung und Verwendung |
| KR20090024802A (ko) * | 2006-06-23 | 2009-03-09 | 알이씨 스캔웨이퍼 에이에스 | 반도체용 실리콘의 제조 장치 및 방법 |
| JP4911607B2 (ja) * | 2007-03-23 | 2012-04-04 | コバレントマテリアル株式会社 | シリコン鋳造用鋳型およびその製造方法 |
| NO327122B1 (no) | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
| DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
| EP2263076A1 (fr) * | 2008-03-28 | 2010-12-22 | Schott AG | Procédé d'essai thermographique de matériaux non métalliques, en particulier de matériaux non métalliques revêtus, ainsi que leur procédé de fabrication, et objets fabriqués selon ce procédé |
| EP2116637A3 (fr) * | 2008-05-07 | 2012-03-21 | Covalent Materials Corporation | Creuset pour la fusion de silicium |
| DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
| CN101433890B (zh) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置 |
| DE102009048741A1 (de) | 2009-03-20 | 2010-09-30 | Access E.V. | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
| WO2011009062A2 (fr) * | 2009-07-16 | 2011-01-20 | Memc Singapore Pte, Ltd. | Creusets revêtus et procédés de préparation et utilisation desdits creusets |
| CN101845666B (zh) * | 2010-06-03 | 2013-08-28 | 王敬 | 一种掺氮晶体硅及其制备方法 |
| JP5637221B2 (ja) | 2010-12-28 | 2014-12-10 | 宇部興産株式会社 | 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー |
| US9625213B2 (en) | 2011-08-31 | 2017-04-18 | 3M Innovative Properties Company | Silicon-nitride-containing separating layer having high hardness |
| US8747538B2 (en) * | 2011-09-20 | 2014-06-10 | Chung-Hou Tony Hsiao | Photovoltaic ingot mold release |
| JP5930637B2 (ja) * | 2011-09-28 | 2016-06-08 | デンカ株式会社 | 離型剤用窒化ケイ素粉末およびその製造方法 |
| JP2013151386A (ja) * | 2012-01-25 | 2013-08-08 | Kyodo Fine Ceramics Co Ltd | ポリシリコンインゴット鋳造用鋳型、ポリシリコンインゴット鋳造用鋳型の製造方法、及びポリシリコンインゴット製造方法 |
| WO2013160236A1 (fr) | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Creuset contenant du nitrure de silicium et procédé de production de creuset contenant du nitrure de silicium |
| DE102013206993B4 (de) * | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
| CN103288357B (zh) * | 2013-06-20 | 2016-03-30 | 天津英利新能源有限公司 | 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法 |
| JP6743753B2 (ja) * | 2017-04-27 | 2020-08-19 | 株式会社Sumco | シリコン単結晶の引上げ方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4515755A (en) * | 1981-05-11 | 1985-05-07 | Toshiba Ceramics Co., Ltd. | Apparatus for producing a silicon single crystal from a silicon melt |
| DE3536933A1 (de) * | 1985-10-17 | 1987-04-23 | Bayer Ag | Verbessertes siliciumnitrid und verfahren zu dessen herstellung |
| US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
| JP2615437B2 (ja) * | 1994-09-20 | 1997-05-28 | 工業技術院長 | 高強度・高靱性窒化ケイ素焼結体及びその製造方法 |
-
1998
- 1998-01-22 WO PCT/EP1998/000333 patent/WO1998035075A1/fr active IP Right Grant
- 1998-01-22 US US09/355,813 patent/US6165425A/en not_active Expired - Lifetime
- 1998-01-22 JP JP53368798A patent/JP2001510434A/ja active Pending
- 1998-01-22 EP EP98904116A patent/EP0963464B1/fr not_active Expired - Lifetime
- 1998-01-22 DE DE59801041T patent/DE59801041D1/de not_active Expired - Lifetime
-
1999
- 1999-07-14 NO NO19993466A patent/NO321946B1/no active IP Right Review Request
-
2009
- 2009-08-07 JP JP2009184298A patent/JP2009298693A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NO993466L (no) | 1999-07-14 |
| US6165425A (en) | 2000-12-26 |
| NO993466D0 (no) | 1999-07-14 |
| DE59801041D1 (de) | 2001-08-23 |
| WO1998035075A1 (fr) | 1998-08-13 |
| JP2009298693A (ja) | 2009-12-24 |
| JP2001510434A (ja) | 2001-07-31 |
| EP0963464A1 (fr) | 1999-12-15 |
| EP0963464B1 (fr) | 2001-07-18 |
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