JP2005239533A - シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 - Google Patents
シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 Download PDFInfo
- Publication number
- JP2005239533A JP2005239533A JP2004230576A JP2004230576A JP2005239533A JP 2005239533 A JP2005239533 A JP 2005239533A JP 2004230576 A JP2004230576 A JP 2004230576A JP 2004230576 A JP2004230576 A JP 2004230576A JP 2005239533 A JP2005239533 A JP 2005239533A
- Authority
- JP
- Japan
- Prior art keywords
- silica powder
- glass crucible
- quartz glass
- single crystal
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 191
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 81
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 67
- 239000002390 adhesive tape Substances 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000010891 electric arc Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Glass Melting And Manufacturing (AREA)
- Surface Treatment Of Glass (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】平滑な内表面と不透明又は半透明な外層と、その外側に未溶融ないし半溶融のシリカ粉が偏在する最外層を有する石英ガラスルツボにおいて、平滑な内表面に離脱シリカ粉がなく、かつ少なくとも直胴部における未溶融ないし半溶融のシリカ粉が偏在する最外層の離脱シリカ粉が粘着テープ法で1.5個/cm2以下であることを特徴とするシリコン単結晶引上げ用石英ガラスルツボ及びその製造方法。
Description
(比較例1)
Claims (8)
- 平滑な内表面と不透明又は半透明な外層と、その外側に未溶融ないし半溶融のシリカ粉が偏在する最外層を有する石英ガラスルツボにおいて、平滑な内表面に離脱シリカ粉がなく、かつ少なくとも直胴部における未溶融ないし半溶融のシリカ粉が偏在する最外層の離脱シリカ粉が粘着テープ法で1.5個/cm2以下であることを特徴とするシリコン単結晶引上げ用石英ガラスルツボ。
- 未溶融ないし半溶融のシリカ粉が偏在する最外層の離脱シリカ粉が粘着テープ法で0.1〜1.0個/cm2であることを特徴とする請求項1記載のシリコン単結晶引上げ用石英ガラスルツボ。
- 回転する型内に原料粉を供給しルツボ状の原料粉体層を形成し、その内側からアーク放電加熱し溶融して平滑な内表面と不透明又は半透明な外層と、その外側に未溶融ないし半溶融のシリカ粉が偏在する最外層を有する石英ガラスルツボを製造し、その外表面に固体シリカ粉を吹き付けたのち、高圧水を吹き付け、次いでフッ酸水溶液処理を施こすことを特徴とするシリコン単結晶引上げ用石英ガラスルツボの製造方法。
- 固体シリカ粉の吹付け圧が0.1〜5MPaであることを特徴とする請求項3記載のシリコン単結晶引上げ用石英ガラスルツボの製造方法。
- 高圧水の吹付け圧が24〜40MPaで、ルツボと高圧水噴射ノズルとの距離が10〜60mmであることを特徴とする請求項3記載のシリコン単結晶引上げ用石英ガラスルツボの製造方法。
- フッ酸水溶液処理による内表面のエッチング量が1〜50μm、外表面のエッチング量が1〜10μmであることを特徴とする請求項3記載のシリコン単結晶引上げ用石英ガラスルツボの製造方法。
- 回転する型の少なくとも直胴部がステンレス鋼製であることを特徴とする請求項3記載のシリコン単結晶引上げ用石英ガラスルツボの製造方法。
- 回転する型と溶融された石英ガラスルツボの最外層の間に残る原料粉の厚さが、少なくとも直胴部において3〜7mmであることを特徴とする請求項3記載のシリコン単結晶引上げ用石英ガラスルツボの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004230576A JP4641760B2 (ja) | 2004-08-06 | 2004-08-06 | シリコン単結晶引上げ用石英ガラスルツボ |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004230576A JP4641760B2 (ja) | 2004-08-06 | 2004-08-06 | シリコン単結晶引上げ用石英ガラスルツボ |
Related Child Applications (1)
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JP2010140335A Division JP5344767B2 (ja) | 2010-06-21 | 2010-06-21 | シリコン単結晶引上げ用石英ガラスルツボの製造方法 |
Publications (2)
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JP2005239533A true JP2005239533A (ja) | 2005-09-08 |
JP4641760B2 JP4641760B2 (ja) | 2011-03-02 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009041685A1 (ja) * | 2007-09-28 | 2009-04-02 | Japan Super Quartz Corporation | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
JP2010280518A (ja) * | 2009-06-02 | 2010-12-16 | Japan Siper Quarts Corp | 石英ガラスルツボ用蓋と石英ガラスルツボおよびその取り扱い方法 |
JP2012218980A (ja) * | 2011-04-11 | 2012-11-12 | Shin Etsu Handotai Co Ltd | 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法 |
DE112011103417T5 (de) | 2010-11-05 | 2013-08-22 | Shin-Etsu Handotai Co., Ltd. | Quarzglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls |
DE112012001167T5 (de) | 2011-04-11 | 2013-12-24 | Shin-Etsu Handotai Co., Ltd. | Silikaglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388792A (ja) * | 1989-08-30 | 1991-04-15 | Mitsubishi Materials Corp | シリコン単結晶引上げ用石英ルツボおよびその製造方法 |
JPH0692779A (ja) * | 1992-04-27 | 1994-04-05 | Shin Etsu Handotai Co Ltd | 単結晶引き上げ用石英るつぼ |
JP2004107163A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Ceramics Co Ltd | 石英ルツボとその製造方法 |
-
2004
- 2004-08-06 JP JP2004230576A patent/JP4641760B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388792A (ja) * | 1989-08-30 | 1991-04-15 | Mitsubishi Materials Corp | シリコン単結晶引上げ用石英ルツボおよびその製造方法 |
JPH0692779A (ja) * | 1992-04-27 | 1994-04-05 | Shin Etsu Handotai Co Ltd | 単結晶引き上げ用石英るつぼ |
JP2004107163A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Ceramics Co Ltd | 石英ルツボとその製造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009041685A1 (ja) * | 2007-09-28 | 2009-04-02 | Japan Super Quartz Corporation | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
JP2009084114A (ja) * | 2007-09-28 | 2009-04-23 | Japan Siper Quarts Corp | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
EP2202335A1 (en) * | 2007-09-28 | 2010-06-30 | Japan Super Quartz Corporation | Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible |
EP2202335A4 (en) * | 2007-09-28 | 2011-09-14 | Japan Super Quartz Corp | QUARTZ GLASS LEVER FOR THE BREEDING OF SILICON INCLUDED CRYSTALS AND METHOD FOR THE PRODUCTION OF THE THICKNESS |
US8871026B2 (en) | 2007-09-28 | 2014-10-28 | Japan Super Quartz Corporation | Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same |
JP2010280518A (ja) * | 2009-06-02 | 2010-12-16 | Japan Siper Quarts Corp | 石英ガラスルツボ用蓋と石英ガラスルツボおよびその取り扱い方法 |
DE112011103417T5 (de) | 2010-11-05 | 2013-08-22 | Shin-Etsu Handotai Co., Ltd. | Quarzglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls |
KR20140039133A (ko) | 2010-11-05 | 2014-04-01 | 신에쯔 한도타이 가부시키가이샤 | 석영 유리 도가니 및 그 제조 방법, 및 실리콘 단결정의 제조 방법 |
US9376336B2 (en) | 2010-11-05 | 2016-06-28 | Shin-Etsu Handotai Co., Ltd. | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
DE112011103417B4 (de) | 2010-11-05 | 2018-11-22 | Shin-Etsu Handotai Co., Ltd. | Verfahren zum Herstellen eines Quarzglastiegels und Verfahren zum Herstellen eines Silizium-Einkristalls |
JP2012218980A (ja) * | 2011-04-11 | 2012-11-12 | Shin Etsu Handotai Co Ltd | 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法 |
DE112012001167T5 (de) | 2011-04-11 | 2013-12-24 | Shin-Etsu Handotai Co., Ltd. | Silikaglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls |
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