WO2009041685A1 - シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 - Google Patents

シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 Download PDF

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Publication number
WO2009041685A1
WO2009041685A1 PCT/JP2008/067653 JP2008067653W WO2009041685A1 WO 2009041685 A1 WO2009041685 A1 WO 2009041685A1 JP 2008067653 W JP2008067653 W JP 2008067653W WO 2009041685 A1 WO2009041685 A1 WO 2009041685A1
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WO
WIPO (PCT)
Prior art keywords
layer
quartz glass
crucible
quartz
semi
Prior art date
Application number
PCT/JP2008/067653
Other languages
English (en)
French (fr)
Inventor
Hiroshi Kishi
Original Assignee
Japan Super Quartz Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corporation filed Critical Japan Super Quartz Corporation
Priority to EP08825825.6A priority Critical patent/EP2202335B1/en
Priority to US12/303,147 priority patent/US8871026B2/en
Publication of WO2009041685A1 publication Critical patent/WO2009041685A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/10—Melting processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

　結晶化促進剤を用いずに、使用時の高温下でもルツボの変形を生じ難く、かつ製造が容易な石英ガラスルツボを提供するために、シリコン単結晶の引き上げに用いる石英ガラスルツボであって、外面層が気泡含有石英ガラス層によって形成されており、内面層が肉眼で気泡が観察されない石英ガラス層によって形成されており、外面層の表面に未溶融ないし半溶融の石英層（半溶融石英層と略称する）を有し、該半溶融石英層の中心線平均粗さ（Ｒａ）が５０μｍ～２００μｍであることを特徴とし、好ましくは、半溶融石英層の層厚が０．５～２．０ｍｍである。
PCT/JP2008/067653 2007-09-28 2008-09-29 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 WO2009041685A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08825825.6A EP2202335B1 (en) 2007-09-28 2008-09-29 Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible
US12/303,147 US8871026B2 (en) 2007-09-28 2008-09-29 Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007256156A JP5229778B2 (ja) 2007-09-28 2007-09-28 シリコン単結晶引き上げ用石英ガラスルツボの製造方法
JP2007-256156 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041685A1 true WO2009041685A1 (ja) 2009-04-02

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PCT/JP2008/067653 WO2009041685A1 (ja) 2007-09-28 2008-09-29 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法

Country Status (6)

Country Link
US (1) US8871026B2 (ja)
EP (1) EP2202335B1 (ja)
JP (1) JP5229778B2 (ja)
KR (1) KR20100069532A (ja)
TW (1) TWI382002B (ja)
WO (1) WO2009041685A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019163192A (ja) * 2018-03-20 2019-09-26 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP2020186145A (ja) * 2019-05-13 2020-11-19 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法
JP2022093544A (ja) * 2018-02-28 2022-06-23 株式会社Sumco シリカガラスルツボ

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154931B1 (ko) * 2009-01-08 2012-06-13 쟈판 스파 쿼츠 가부시키가이샤 석영 유리 도가니 제조 장치
JP5397857B2 (ja) * 2009-10-20 2014-01-22 株式会社Ｓｕｍｃｏ 石英ガラスルツボの製造方法および製造装置
JP5574534B2 (ja) 2010-12-28 2014-08-20 株式会社Ｓｕｍｃｏ 複合ルツボ
WO2013112231A1 (en) * 2012-01-27 2013-08-01 Gtat Corporation Method of producing monocrystalline silicon
KR102202406B1 (ko) * 2013-05-23 2021-01-13 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리 챔버를 위한 코팅된 라이너 어셈블리
JP6123001B2 (ja) * 2016-05-31 2017-04-26 株式会社Sumco シリカガラスルツボの評価方法、シリコン単結晶の製造方法
KR101829291B1 (ko) * 2016-08-05 2018-02-19 에스케이실트론 주식회사 도가니 및 이를 포함하는 단결정 성장 장치
US20180086132A1 (en) * 2016-09-26 2018-03-29 Robert Moore Storage Organizer
CN108531980B (zh) * 2018-05-29 2020-12-11 宁夏富乐德石英材料有限公司 改良石英坩埚及其制作方法
US11939695B2 (en) * 2018-12-27 2024-03-26 Sumco Corporation Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145984A (ja) * 1986-12-09 1988-06-18 Toshiba Glass Co Ltd 線量計用ガラス素子
JPH0753295A (ja) * 1993-08-10 1995-02-28 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JP2004123508A (ja) * 2002-08-01 2004-04-22 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
JP2004299927A (ja) * 2003-03-28 2004-10-28 Japan Siper Quarts Corp 石英ガラスルツボ
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005239533A (ja) * 2004-08-06 2005-09-08 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP2007153625A (ja) * 2005-11-30 2007-06-21 Japan Siper Quarts Corp 結晶化し易い石英ガラス部材とその用途

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3014311C2 (de) * 1980-04-15 1982-06-16 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verfahren zur Herstellung von Quarzglastiegeln und Vorrichtung zur Durchführung dieses Verfahrens
JPS61182952U (ja) * 1985-04-27 1986-11-14
US4935046A (en) 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JPH0729871B2 (ja) 1987-12-03 1995-04-05 信越半導体 株式会社 単結晶引き上げ用石英るつぼ
JP3100836B2 (ja) 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
JP4285788B2 (ja) * 1996-03-14 2009-06-24 信越石英株式会社 単結晶引き上げ用大口径石英るつぼの製造方法
JP3583604B2 (ja) 1998-01-12 2004-11-04 東芝セラミックス株式会社 石英ガラスルツボとその製造方法
JP2000159593A (ja) * 1998-11-24 2000-06-13 Toshiba Ceramics Co Ltd 石英ガラスるつぼの製造方法
JP4454059B2 (ja) * 1999-01-29 2010-04-21 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ
US20030012899A1 (en) * 2001-07-16 2003-01-16 Heraeus Shin-Etsu America Doped silica glass crucible for making a silicon ingot
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
US6641663B2 (en) * 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
JP2003095678A (ja) 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
US7081290B2 (en) * 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same
JP4076416B2 (ja) * 2002-09-20 2008-04-16 コバレントマテリアル株式会社 石英ルツボとその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145984A (ja) * 1986-12-09 1988-06-18 Toshiba Glass Co Ltd 線量計用ガラス素子
JPH0753295A (ja) * 1993-08-10 1995-02-28 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JP2004123508A (ja) * 2002-08-01 2004-04-22 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
JP2004299927A (ja) * 2003-03-28 2004-10-28 Japan Siper Quarts Corp 石英ガラスルツボ
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005239533A (ja) * 2004-08-06 2005-09-08 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP2007153625A (ja) * 2005-11-30 2007-06-21 Japan Siper Quarts Corp 結晶化し易い石英ガラス部材とその用途

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2202335A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022093544A (ja) * 2018-02-28 2022-06-23 株式会社Sumco シリカガラスルツボ
JP7408057B2 (ja) 2018-02-28 2024-01-05 株式会社Sumco シリカガラスルツボ
JP2019163192A (ja) * 2018-03-20 2019-09-26 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP7022386B2 (ja) 2018-03-20 2022-02-18 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP2020186145A (ja) * 2019-05-13 2020-11-19 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法
JP7172844B2 (ja) 2019-05-13 2022-11-16 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法

Also Published As

Publication number Publication date
TW200922889A (en) 2009-06-01
JP2009084114A (ja) 2009-04-23
EP2202335B1 (en) 2017-03-22
US20100236473A1 (en) 2010-09-23
TWI382002B (zh) 2013-01-11
EP2202335A1 (en) 2010-06-30
JP5229778B2 (ja) 2013-07-03
EP2202335A4 (en) 2011-09-14
US8871026B2 (en) 2014-10-28
KR20100069532A (ko) 2010-06-24

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