NO313132B1 - Fremgangsmåte for rensing av silisium - Google Patents
Fremgangsmåte for rensing av silisium Download PDFInfo
- Publication number
- NO313132B1 NO313132B1 NO19996022A NO996022A NO313132B1 NO 313132 B1 NO313132 B1 NO 313132B1 NO 19996022 A NO19996022 A NO 19996022A NO 996022 A NO996022 A NO 996022A NO 313132 B1 NO313132 B1 NO 313132B1
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- calcium
- added
- metal
- molten
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 15
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 15
- 239000011575 calcium Substances 0.000 claims abstract description 15
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- 238000002386 leaching Methods 0.000 claims abstract description 12
- 238000000746 purification Methods 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007864 aqueous solution Substances 0.000 claims abstract description 5
- 230000001105 regulatory effect Effects 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 5
- 229940043430 calcium compound Drugs 0.000 claims description 4
- 150000001674 calcium compounds Chemical class 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 238000005336 cracking Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 43
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO19996022A NO313132B1 (no) | 1999-12-08 | 1999-12-08 | Fremgangsmåte for rensing av silisium |
| US10/149,176 US6861040B1 (en) | 1999-12-08 | 2000-08-11 | Refining of metallurgical grade silicon |
| CNB008169047A CN1231416C (zh) | 1999-12-08 | 2000-11-08 | 冶金级硅的纯化方法 |
| BRPI0016239-6A BR0016239B1 (pt) | 1999-12-08 | 2000-11-08 | método para purificação de silìcio de qualidade metalúrgica. |
| CA002393511A CA2393511C (fr) | 1999-12-08 | 2000-11-08 | Procede de raffinage du silicium de qualite metallurgique |
| AT00978115T ATE277866T1 (de) | 1999-12-08 | 2000-11-08 | Aufreinigung von silicium metallurgischer reinheit |
| ES00978115T ES2223616T3 (es) | 1999-12-08 | 2000-11-08 | Refinado de silicio de grado metalurgico. |
| DE60014441T DE60014441T2 (de) | 1999-12-08 | 2000-11-08 | Aufreinigung von silicium metallurgischer reinheit |
| JP2001543443A JP4035323B2 (ja) | 1999-12-08 | 2000-11-08 | 冶金品位ケイ素の精製 |
| PCT/NO2000/000374 WO2001042136A1 (fr) | 1999-12-08 | 2000-11-08 | Procede de raffinage du silicium de qualite metallurgique |
| EP00978115A EP1254074B1 (fr) | 1999-12-08 | 2000-11-08 | Procede de raffinage du silicium de qualite metallurgique |
| AU15607/01A AU1560701A (en) | 1999-12-08 | 2000-11-08 | Refining of metallurgical grade silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO19996022A NO313132B1 (no) | 1999-12-08 | 1999-12-08 | Fremgangsmåte for rensing av silisium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO996022D0 NO996022D0 (no) | 1999-12-08 |
| NO996022L NO996022L (no) | 2001-06-11 |
| NO313132B1 true NO313132B1 (no) | 2002-08-19 |
Family
ID=19904078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19996022A NO313132B1 (no) | 1999-12-08 | 1999-12-08 | Fremgangsmåte for rensing av silisium |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6861040B1 (fr) |
| EP (1) | EP1254074B1 (fr) |
| JP (1) | JP4035323B2 (fr) |
| CN (1) | CN1231416C (fr) |
| AT (1) | ATE277866T1 (fr) |
| AU (1) | AU1560701A (fr) |
| BR (1) | BR0016239B1 (fr) |
| CA (1) | CA2393511C (fr) |
| DE (1) | DE60014441T2 (fr) |
| ES (1) | ES2223616T3 (fr) |
| NO (1) | NO313132B1 (fr) |
| WO (1) | WO2001042136A1 (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4115432B2 (ja) * | 2004-07-14 | 2008-07-09 | シャープ株式会社 | 金属の精製方法 |
| CN100579902C (zh) * | 2007-07-06 | 2010-01-13 | 昆明理工大学 | 一种制备超冶金级硅的方法 |
| ITMI20081085A1 (it) * | 2008-06-16 | 2009-12-17 | N E D Silicon S P A | Metodo per la preparazione di silicio di grado metallurgico di elevata purezza. |
| US20120164055A1 (en) * | 2009-06-24 | 2012-06-28 | The Governing Council Of The University Of Toronto | Method of removal of impurities from silicon |
| DE102009034317A1 (de) | 2009-07-23 | 2011-02-03 | Q-Cells Se | Verfahren zur Herstellung durchbruchsicherer p-Typ Solarzellen aus umg-Silizium |
| NO331026B1 (no) * | 2009-09-23 | 2011-09-12 | Elkem Solar As | Fremgangsmate for fremstilling av hoyrent silisium |
| DE102009046265A1 (de) * | 2009-10-30 | 2011-05-19 | Rheinisch-Westfälische Technische Hochschule Aachen | Verfahren zur Aufarbeitung von Sägerückständen aus der Produktion von Silizium-Wafern |
| CN103154288A (zh) | 2010-05-20 | 2013-06-12 | 道康宁公司 | 制备铝-硅合金的方法和系统 |
| CN102602935B (zh) * | 2012-03-05 | 2014-03-12 | 矽明科技股份有限公司 | 一种高钙除磷的硅的清洗方法 |
| EP2864252A1 (fr) | 2012-06-25 | 2015-04-29 | Silicor Materials Inc. | Procédé de purification de silicium |
| JP5954854B2 (ja) | 2012-06-25 | 2016-07-20 | シリコー マテリアルズ インコーポレイテッド | アルミニウムを精製するための方法およびシリコンを精製するための精製アルミニウムの使用 |
| NO339608B1 (no) * | 2013-09-09 | 2017-01-09 | Elkem Solar As | Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller |
| WO2017096563A1 (fr) * | 2015-12-09 | 2017-06-15 | 季国平 | Procédé de purification industrielle de silicium |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200621A (en) * | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| IT1100218B (it) * | 1978-11-09 | 1985-09-28 | Montedison Spa | Procedimento per la purificazione di silicio |
| US4312847A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Silicon purification system |
| DE2933164A1 (de) * | 1979-08-16 | 1981-02-26 | Consortium Elektrochem Ind | Verfahren zum reinigen von rohsilicium |
| NO152551C (no) | 1983-02-07 | 1985-10-16 | Elkem As | Fremgangsmaate til fremstilling av rent silisium. |
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
| US4798659A (en) * | 1986-12-22 | 1989-01-17 | Dow Corning Corporation | Addition of calcium compounds to the carbothermic reduction of silica |
| RU2097320C1 (ru) | 1993-11-01 | 1997-11-27 | Институт металлургии Уральского отделения РАН | Способ получения порошка кремния повышенной частоты |
-
1999
- 1999-12-08 NO NO19996022A patent/NO313132B1/no not_active IP Right Cessation
-
2000
- 2000-08-11 US US10/149,176 patent/US6861040B1/en not_active Expired - Lifetime
- 2000-11-08 EP EP00978115A patent/EP1254074B1/fr not_active Expired - Lifetime
- 2000-11-08 JP JP2001543443A patent/JP4035323B2/ja not_active Expired - Fee Related
- 2000-11-08 CA CA002393511A patent/CA2393511C/fr not_active Expired - Lifetime
- 2000-11-08 DE DE60014441T patent/DE60014441T2/de not_active Expired - Lifetime
- 2000-11-08 BR BRPI0016239-6A patent/BR0016239B1/pt not_active IP Right Cessation
- 2000-11-08 ES ES00978115T patent/ES2223616T3/es not_active Expired - Lifetime
- 2000-11-08 WO PCT/NO2000/000374 patent/WO2001042136A1/fr active IP Right Grant
- 2000-11-08 CN CNB008169047A patent/CN1231416C/zh not_active Expired - Lifetime
- 2000-11-08 AT AT00978115T patent/ATE277866T1/de not_active IP Right Cessation
- 2000-11-08 AU AU15607/01A patent/AU1560701A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| NO996022D0 (no) | 1999-12-08 |
| CN1409691A (zh) | 2003-04-09 |
| US6861040B1 (en) | 2005-03-01 |
| WO2001042136A1 (fr) | 2001-06-14 |
| CN1231416C (zh) | 2005-12-14 |
| EP1254074B1 (fr) | 2004-09-29 |
| ATE277866T1 (de) | 2004-10-15 |
| NO996022L (no) | 2001-06-11 |
| BR0016239B1 (pt) | 2009-08-11 |
| DE60014441D1 (de) | 2004-11-04 |
| CA2393511A1 (fr) | 2001-06-14 |
| BR0016239A (pt) | 2002-08-27 |
| AU1560701A (en) | 2001-06-18 |
| CA2393511C (fr) | 2007-03-20 |
| JP4035323B2 (ja) | 2008-01-23 |
| JP2003516295A (ja) | 2003-05-13 |
| ES2223616T3 (es) | 2005-03-01 |
| EP1254074A1 (fr) | 2002-11-06 |
| DE60014441T2 (de) | 2005-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4539194A (en) | Method for production of pure silicon | |
| Wang et al. | Effects of RE on the microstructure and mechanical properties of Mg–8Zn–4Al magnesium alloy | |
| NO313132B1 (no) | Fremgangsmåte for rensing av silisium | |
| CA2744802C (fr) | Procede de fabrication d'un silicium de haute purete | |
| Margarido et al. | The structural effect on the kinetics of acid leaching refining of Fe-Si alloys | |
| US2267298A (en) | Method of producing highly pure manganese titanium alloys | |
| US1998467A (en) | Method of treating aluminum-base alloys | |
| US2813019A (en) | Method of producing zirconium metal | |
| US3595608A (en) | Method of increasing rate of dissolution of aluminum in acid chloride solutions | |
| US2030357A (en) | Process of removing tin from columbium alloys | |
| JPH0681051A (ja) | ハロゲン化金属の還元反応による金属の製造方法 | |
| US2779672A (en) | Method of treating molten magnesium | |
| US2540366A (en) | Production of magnesium castings | |
| JPH07316713A (ja) | 高強度高耐食性Ｍｇ基合金及び該合金よりなる鋳物の製法 | |
| US2165441A (en) | Free-cutting aluminum alloys | |
| CN115747630A (zh) | 一种深海采油装备管道连接器用钢及其锻造方法 | |
| US2116891A (en) | Process for the production of solder and terne metals | |
| JPS5931579B2 (ja) | アルミニウム溶湯の脱マグネシウム処理法 | |
| CN115198100A (zh) | 一种紫杂铜除镍/铋的添加剂及其制备方法和应用 | |
| US1726001A (en) | Process of purifying aluminum oxide | |
| CA1102274A (fr) | Traduction non-disponible | |
| CN117926078A (zh) | 一种含铋钪的轧制tc4合金及其制备工艺 | |
| CN102816940A (zh) | 一种生产海绵钛的四氯化钛加料方法 | |
| CN115572854A (zh) | 一种眼镜盒用铝合金及其制备方法 | |
| JPS59153849A (ja) | アルミニウムスクラツプの処理法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CHAD | Change of the owner's name or address (par. 44 patent law, par. patentforskriften) |
Owner name: REC SOLAR NORWAY AS, NO |
|
| MK1K | Patent expired |