BR0016239A - Método para purificação de silìcio de qualidade metalúrgica - Google Patents
Método para purificação de silìcio de qualidade metalúrgicaInfo
- Publication number
- BR0016239A BR0016239A BR0016239-6A BR0016239A BR0016239A BR 0016239 A BR0016239 A BR 0016239A BR 0016239 A BR0016239 A BR 0016239A BR 0016239 A BR0016239 A BR 0016239A
- Authority
- BR
- Brazil
- Prior art keywords
- silicon
- purification
- molten
- calcium
- molten silicon
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 13
- 239000010703 silicon Substances 0.000 title abstract 13
- 238000000746 purification Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 3
- 229910052791 calcium Inorganic materials 0.000 abstract 3
- 239000011575 calcium Substances 0.000 abstract 3
- 238000002386 leaching Methods 0.000 abstract 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
"MéTODO PARA PURIFICAçãO DE SILìCIO DE QUALIDADE METALúRGICA". A invenção se refere a um método para purificação de silício de qualidade metalúrgica onde um composto contendo cálcio é adicionado ao silício em fusão antes ou depois do silício ser vazado do forno. O silício é vertido e solidificado a uma velocidade de resfriamento relativamente alta e o silício solidificado é triturado e submetido a um processo de purificação que consiste em duas etapas de lixiviação. Na primeira etapa de lixiviação, o silício é tratado com uma solução aquosa de FeC1~ 3~ ou FeC1~ 3~ e HCI que causa desintegração do silício e na segunda etapa de lixiviação o silício é tratado com uma solução aquosa de UF ou HF/HNO~ 3~. O composto contendo cálcio é adicionado ao silício em fusão em uma quantidade necessária para prover entre 0,3 e 0,95% em peso de cálcio no silício em fusão e a relação em peso entre AI e Fe no silício em fusão é regulada a entre 0,5 e 2,0,por adição de alumínio ao silício em fusão.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO19996022A NO313132B1 (no) | 1999-12-08 | 1999-12-08 | Fremgangsmåte for rensing av silisium |
| PCT/NO2000/000374 WO2001042136A1 (en) | 1999-12-08 | 2000-11-08 | Refining of metallurgical grade silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR0016239A true BR0016239A (pt) | 2002-08-27 |
| BR0016239B1 BR0016239B1 (pt) | 2009-08-11 |
Family
ID=19904078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0016239-6A BR0016239B1 (pt) | 1999-12-08 | 2000-11-08 | método para purificação de silìcio de qualidade metalúrgica. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6861040B1 (pt) |
| EP (1) | EP1254074B1 (pt) |
| JP (1) | JP4035323B2 (pt) |
| CN (1) | CN1231416C (pt) |
| AT (1) | ATE277866T1 (pt) |
| AU (1) | AU1560701A (pt) |
| BR (1) | BR0016239B1 (pt) |
| CA (1) | CA2393511C (pt) |
| DE (1) | DE60014441T2 (pt) |
| ES (1) | ES2223616T3 (pt) |
| NO (1) | NO313132B1 (pt) |
| WO (1) | WO2001042136A1 (pt) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4115432B2 (ja) * | 2004-07-14 | 2008-07-09 | シャープ株式会社 | 金属の精製方法 |
| CN100579902C (zh) * | 2007-07-06 | 2010-01-13 | 昆明理工大学 | 一种制备超冶金级硅的方法 |
| ITMI20081085A1 (it) * | 2008-06-16 | 2009-12-17 | N E D Silicon S P A | Metodo per la preparazione di silicio di grado metallurgico di elevata purezza. |
| US20120164055A1 (en) * | 2009-06-24 | 2012-06-28 | The Governing Council Of The University Of Toronto | Method of removal of impurities from silicon |
| DE102009034317A1 (de) | 2009-07-23 | 2011-02-03 | Q-Cells Se | Verfahren zur Herstellung durchbruchsicherer p-Typ Solarzellen aus umg-Silizium |
| NO331026B1 (no) * | 2009-09-23 | 2011-09-12 | Elkem Solar As | Fremgangsmate for fremstilling av hoyrent silisium |
| DE102009046265A1 (de) * | 2009-10-30 | 2011-05-19 | Rheinisch-Westfälische Technische Hochschule Aachen | Verfahren zur Aufarbeitung von Sägerückständen aus der Produktion von Silizium-Wafern |
| EP2572010A2 (en) | 2010-05-20 | 2013-03-27 | Dow Corning Corporation | Method and system for producing an aluminum-silicon alloy |
| CN102602935B (zh) * | 2012-03-05 | 2014-03-12 | 矽明科技股份有限公司 | 一种高钙除磷的硅的清洗方法 |
| BR112014032599A2 (pt) | 2012-06-25 | 2017-06-27 | Silicor Mat Inc | método para purificar alumínio e uso de alumínio purificado para purificar silício. |
| WO2014004463A1 (en) | 2012-06-25 | 2014-01-03 | Silicor Materials Inc. | Method for purifying silicon |
| NO339608B1 (no) | 2013-09-09 | 2017-01-09 | Elkem Solar As | Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller |
| WO2017096563A1 (zh) * | 2015-12-09 | 2017-06-15 | 季国平 | 一种硅的工业提纯方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200621A (en) * | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| IT1100218B (it) * | 1978-11-09 | 1985-09-28 | Montedison Spa | Procedimento per la purificazione di silicio |
| US4312847A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Silicon purification system |
| DE2933164A1 (de) * | 1979-08-16 | 1981-02-26 | Consortium Elektrochem Ind | Verfahren zum reinigen von rohsilicium |
| NO152551C (no) | 1983-02-07 | 1985-10-16 | Elkem As | Fremgangsmaate til fremstilling av rent silisium. |
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
| US4798659A (en) * | 1986-12-22 | 1989-01-17 | Dow Corning Corporation | Addition of calcium compounds to the carbothermic reduction of silica |
| RU2097320C1 (ru) | 1993-11-01 | 1997-11-27 | Институт металлургии Уральского отделения РАН | Способ получения порошка кремния повышенной частоты |
-
1999
- 1999-12-08 NO NO19996022A patent/NO313132B1/no not_active IP Right Cessation
-
2000
- 2000-08-11 US US10/149,176 patent/US6861040B1/en not_active Expired - Lifetime
- 2000-11-08 CA CA002393511A patent/CA2393511C/en not_active Expired - Lifetime
- 2000-11-08 ES ES00978115T patent/ES2223616T3/es not_active Expired - Lifetime
- 2000-11-08 DE DE60014441T patent/DE60014441T2/de not_active Expired - Lifetime
- 2000-11-08 JP JP2001543443A patent/JP4035323B2/ja not_active Expired - Fee Related
- 2000-11-08 AT AT00978115T patent/ATE277866T1/de not_active IP Right Cessation
- 2000-11-08 CN CNB008169047A patent/CN1231416C/zh not_active Expired - Lifetime
- 2000-11-08 EP EP00978115A patent/EP1254074B1/en not_active Expired - Lifetime
- 2000-11-08 AU AU15607/01A patent/AU1560701A/en not_active Abandoned
- 2000-11-08 WO PCT/NO2000/000374 patent/WO2001042136A1/en active IP Right Grant
- 2000-11-08 BR BRPI0016239-6A patent/BR0016239B1/pt not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES2223616T3 (es) | 2005-03-01 |
| CA2393511C (en) | 2007-03-20 |
| ATE277866T1 (de) | 2004-10-15 |
| CA2393511A1 (en) | 2001-06-14 |
| NO313132B1 (no) | 2002-08-19 |
| CN1409691A (zh) | 2003-04-09 |
| CN1231416C (zh) | 2005-12-14 |
| AU1560701A (en) | 2001-06-18 |
| WO2001042136A1 (en) | 2001-06-14 |
| US6861040B1 (en) | 2005-03-01 |
| EP1254074A1 (en) | 2002-11-06 |
| EP1254074B1 (en) | 2004-09-29 |
| NO996022L (no) | 2001-06-11 |
| DE60014441D1 (de) | 2004-11-04 |
| JP2003516295A (ja) | 2003-05-13 |
| NO996022D0 (no) | 1999-12-08 |
| JP4035323B2 (ja) | 2008-01-23 |
| BR0016239B1 (pt) | 2009-08-11 |
| DE60014441T2 (de) | 2005-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 08/11/2000, OBSERVADAS AS CONDICOES LEGAIS. |
|
| B25A | Requested transfer of rights approved |
Owner name: REC SOLAR NORWAY AS (NO) |
|
| B21A | Patent or certificate of addition expired [chapter 21.1 patent gazette] |
Free format text: PATENTE EXTINTA EM 08.11.2020 |