NO20090914L - Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller - Google Patents

Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller

Info

Publication number
NO20090914L
NO20090914L NO20090914A NO20090914A NO20090914L NO 20090914 L NO20090914 L NO 20090914L NO 20090914 A NO20090914 A NO 20090914A NO 20090914 A NO20090914 A NO 20090914A NO 20090914 L NO20090914 L NO 20090914L
Authority
NO
Norway
Prior art keywords
melting
semi
separation
formation
continuous process
Prior art date
Application number
NO20090914A
Other languages
English (en)
Other versions
NO329987B1 (no
Inventor
Harsharn Tathgar
Original Assignee
Harsharn Tathgar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harsharn Tathgar filed Critical Harsharn Tathgar
Priority to NO20090914A priority Critical patent/NO329987B1/no
Priority to PCT/NO2010/000074 priority patent/WO2010098676A1/en
Priority to AU2010218501A priority patent/AU2010218501A1/en
Priority to JP2011551999A priority patent/JP5623436B2/ja
Priority to EP10746497A priority patent/EP2401231A4/en
Priority to KR1020117021337A priority patent/KR20110132374A/ko
Priority to RU2011137004/05A priority patent/RU2011137004A/ru
Priority to US13/203,493 priority patent/US9039833B2/en
Priority to CN201080009534.0A priority patent/CN102333726B/zh
Publication of NO20090914L publication Critical patent/NO20090914L/no
Publication of NO329987B1 publication Critical patent/NO329987B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
NO20090914A 2009-02-26 2009-02-26 Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller NO329987B1 (no)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NO20090914A NO329987B1 (no) 2009-02-26 2009-02-26 Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
PCT/NO2010/000074 WO2010098676A1 (en) 2009-02-26 2010-02-25 Method for the production of solar grade silicon
AU2010218501A AU2010218501A1 (en) 2009-02-26 2010-02-25 Method for the production of solar grade silicon
JP2011551999A JP5623436B2 (ja) 2009-02-26 2010-02-25 太陽電池級シリコンの製造方法
EP10746497A EP2401231A4 (en) 2009-02-26 2010-02-25 PROCESS FOR THE PRODUCTION OF SILICON OF SOLAR QUALITY
KR1020117021337A KR20110132374A (ko) 2009-02-26 2010-02-25 태양전지급 규소의 제조 방법
RU2011137004/05A RU2011137004A (ru) 2009-02-26 2010-02-25 Способ получения кремния солнечного качества
US13/203,493 US9039833B2 (en) 2009-02-26 2010-02-25 Method for the production of solar grade silicon
CN201080009534.0A CN102333726B (zh) 2009-02-26 2010-02-25 太阳能级硅的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20090914A NO329987B1 (no) 2009-02-26 2009-02-26 Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller

Publications (2)

Publication Number Publication Date
NO20090914L true NO20090914L (no) 2010-08-27
NO329987B1 NO329987B1 (no) 2011-01-31

Family

ID=42665728

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20090914A NO329987B1 (no) 2009-02-26 2009-02-26 Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller

Country Status (9)

Country Link
US (1) US9039833B2 (no)
EP (1) EP2401231A4 (no)
JP (1) JP5623436B2 (no)
KR (1) KR20110132374A (no)
CN (1) CN102333726B (no)
AU (1) AU2010218501A1 (no)
NO (1) NO329987B1 (no)
RU (1) RU2011137004A (no)
WO (1) WO2010098676A1 (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501139B2 (en) 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US8603242B2 (en) 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
TWI627131B (zh) 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
US10266951B2 (en) 2012-11-28 2019-04-23 Trustees Of Boston University Method and apparatus for producing solar grade silicon using a SOM electrolysis process
CN103898600B (zh) * 2014-03-28 2016-05-18 中国科学院上海技术物理研究所 一种降低GaAs薄膜杂质含量的制备方法
WO2020221440A1 (de) * 2019-04-30 2020-11-05 Wacker Chemie Ag Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN111793756A (zh) * 2020-07-13 2020-10-20 苏州金江铜业有限公司 一种制备高纯单质金属的工艺

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US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets
JPS5085517A (no) * 1974-09-19 1975-07-10
US4124410A (en) 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
US4195067A (en) 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
EP0002135B1 (en) 1977-11-21 1982-11-03 Union Carbide Corporation Improved refined metallurgical silicon and process for the production thereof
US4312846A (en) 1979-05-24 1982-01-26 Aluminum Company Of America Method of silicon purification
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JPH07277722A (ja) * 1994-02-16 1995-10-24 Sumitomo Chem Co Ltd ケイ素の精製方法
JP3415382B2 (ja) * 1996-12-25 2003-06-09 トヨタ自動車株式会社 高純度珪素粉末の製造方法
JPH11162859A (ja) 1997-11-28 1999-06-18 Canon Inc シリコン結晶の液相成長方法及びそれを用いた太陽電池の製造方法
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JP4732219B2 (ja) * 2006-04-03 2011-07-27 相模サーボ株式会社 高純度シリコン製造方法及び高純度シリコン製造装置
BRPI0710313A2 (pt) 2006-04-04 2011-08-09 6N Silicon Inc método para a purificação de silìcio
JP5218934B2 (ja) * 2006-08-31 2013-06-26 三菱マテリアル株式会社 金属シリコンとその製造方法
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Also Published As

Publication number Publication date
NO329987B1 (no) 2011-01-31
RU2011137004A (ru) 2013-04-10
AU2010218501A1 (en) 2011-10-20
JP5623436B2 (ja) 2014-11-12
JP2012519129A (ja) 2012-08-23
US9039833B2 (en) 2015-05-26
US20110302963A1 (en) 2011-12-15
CN102333726B (zh) 2014-05-28
KR20110132374A (ko) 2011-12-07
CN102333726A (zh) 2012-01-25
EP2401231A4 (en) 2013-03-06
EP2401231A1 (en) 2012-01-04
WO2010098676A1 (en) 2010-09-02

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