NO20085073L - Fremgangsmate for fremstilling av silisium - Google Patents

Fremgangsmate for fremstilling av silisium

Info

Publication number
NO20085073L
NO20085073L NO20085073A NO20085073A NO20085073L NO 20085073 L NO20085073 L NO 20085073L NO 20085073 A NO20085073 A NO 20085073A NO 20085073 A NO20085073 A NO 20085073A NO 20085073 L NO20085073 L NO 20085073L
Authority
NO
Norway
Prior art keywords
silicon
electrolysis
alloy
temperature
cathode
Prior art date
Application number
NO20085073A
Other languages
English (en)
Norwegian (no)
Inventor
Kunio Saegusa
Tetsuo Oishi
Kazuya Koyama
Original Assignee
Aist
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aist filed Critical Aist
Publication of NO20085073L publication Critical patent/NO20085073L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/33—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
NO20085073A 2006-05-26 2008-12-04 Fremgangsmate for fremstilling av silisium NO20085073L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006146386 2006-05-26
PCT/JP2007/060714 WO2007139023A1 (ja) 2006-05-26 2007-05-25 シリコンの製造方法

Publications (1)

Publication Number Publication Date
NO20085073L true NO20085073L (no) 2009-02-24

Family

ID=38778544

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20085073A NO20085073L (no) 2006-05-26 2008-12-04 Fremgangsmate for fremstilling av silisium

Country Status (6)

Country Link
US (1) US8303796B2 (de)
CN (1) CN101454244B (de)
CA (1) CA2651989A1 (de)
DE (1) DE112007001239T8 (de)
NO (1) NO20085073L (de)
WO (1) WO2007139023A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2775862C1 (ru) * 2021-09-20 2022-07-11 Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Электролитический способ получения кремния из расплавленных солей

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011006317A (ja) * 2009-05-26 2011-01-13 Sumitomo Chemical Co Ltd 精製された金属又は半金属の製造方法
KR101061991B1 (ko) 2009-12-28 2011-09-05 한국기계연구원 태양전지용 후면전극 및 이의 제조방법
CN102220606B (zh) * 2010-04-16 2012-07-04 中南大学 一种惰性阳极熔盐电解制备硅颗粒的方法
WO2012083480A1 (en) * 2010-12-20 2012-06-28 Epro Development Limited Method and apparatus for producing pure silicon
CN103261095A (zh) * 2010-12-20 2013-08-21 盈保发展有限公司 用于制造硅的方法和装置
CN103103552B (zh) * 2011-11-15 2016-04-13 国联汽车动力电池研究院有限责任公司 一种采用熔盐电解制取硅的方法
US10266951B2 (en) * 2012-11-28 2019-04-23 Trustees Of Boston University Method and apparatus for producing solar grade silicon using a SOM electrolysis process
KR101642026B1 (ko) * 2013-08-19 2016-07-22 한국원자력연구원 전기화학적 실리콘 막 제조방법
CN105040020B (zh) * 2015-08-10 2017-03-22 东北大学 利用离子液体低温电解SiO2制取高纯硅薄膜的方法
CN109930176A (zh) * 2018-08-14 2019-06-25 华北理工大学 一种熔盐制备硅镍合金的方法
CN110642253B (zh) * 2019-09-27 2022-10-11 南昌航空大学 一种铝热反应制备纳米还原硅的制备方法
US11827993B1 (en) 2020-09-18 2023-11-28 GRU Energy Lab Inc. Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition
EP4256111A1 (de) * 2020-12-06 2023-10-11 Helios Project Ltd. Verfahren zur herstellung von silicium
CN115305508A (zh) * 2021-05-08 2022-11-08 郑州大学 利用高硅含铝资源生产金属铝和多晶硅的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292145A (en) * 1980-05-14 1981-09-29 The Board Of Trustees Of Leland Stanford Junior University Electrodeposition of molten silicon
DE3310828A1 (de) 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von silicium
DE3824065A1 (de) 1988-07-15 1990-01-18 Bayer Ag Verfahren zur herstellung von solarsilicium
NO942121L (no) 1994-06-07 1995-12-08 Jan Stubergh Fremstilling og anordning for fremstilling av silisium-"metall", silumin og aluminium-metall
WO1997027143A1 (en) 1996-01-22 1997-07-31 Jan Reidar Stubergh Production of high purity silicon metal, aluminium, their alloys, silicon carbide and aluminium oxide from alkali alkaline earth alumino silicates
NO20010963D0 (no) 2001-02-26 2001-02-26 Norwegian Silicon Refinery As FremgangsmÕte for fremstilling av silisium og/eller aluminium og silumin (aluminium-silisium-legering)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2775862C1 (ru) * 2021-09-20 2022-07-11 Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Электролитический способ получения кремния из расплавленных солей

Also Published As

Publication number Publication date
US8303796B2 (en) 2012-11-06
DE112007001239T5 (de) 2009-04-30
US20100059118A1 (en) 2010-03-11
WO2007139023A1 (ja) 2007-12-06
DE112007001239T8 (de) 2009-09-03
CA2651989A1 (en) 2007-12-06
CN101454244B (zh) 2011-11-30
CN101454244A (zh) 2009-06-10

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